BPV10NF Search Results
BPV10NF Price and Stock
Vishay Semiconductors BPV10NFSENSOR PHOTODIODE 940NM RADIAL |
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BPV10NF | Bulk | 7,308 | 1 |
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Vishay Intertechnologies BPV10NFPHOTO PIN DIODE 5MM FILTR 875NM-e4 - Bulk (Alt: 32C9136) |
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BPV10NF | Bulk | 7 Weeks, 1 Days | 1 |
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BPV10NF |
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BPV10NF | 98,517 | 37 |
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BPV10NF | 98,517 | 6 Weeks | 1 |
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BPV10NF | Bulk | 1 | 1 |
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BPV10NF | 2,960 |
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BPV10NF | Bulk | 4,447 | 8 |
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BPV10NF | 2,134 | 1 |
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BPV10NF | Bulk | 5 | 1 |
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BPV10NF | 7 Weeks | 4,000 |
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BPV10NF | 32,000 | 1 |
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Temic Semiconductors BPV10NFPhoto Diode |
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BPV10NF | 1,000 |
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Vishay Intertechnologies BPV10NF-CS21PHOTO PIN DIODE 5MM FILTR 875NMe4 (Alt: BPV10NF-CS21) |
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BPV10NF-CS21 | 7 Weeks | 1,000 |
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BPV10NF-CS21 | 1,653 |
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Telefunken Microelectronics BPV10NFOptoelectronics |
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BPV10NF | 16,189 |
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BPV10NF Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BPV10NF | Vishay Intertechnology | High Speed Silicon PIN Photodiode | Original | |||
BPV10NF | Vishay Telefunken | Photodiode, PIN Module, 0.55A/W Sensitivity, 2.5nSec, 1nA | Original |
BPV10NF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm |
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BPV10NF BPV10NF 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
BPV10NF
Abstract: 161401
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Original |
BPV10NF BPV10NF 2002/95/EC 2002/96/EC 11-Mar-11 161401 | |
BPV10NFContextual Info: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and |
Original |
BPV10NF 950nm) 870nm) 78mm2 D-74025 | |
BPV10NF
Abstract: 8436 TSSF4500
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Original |
BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 15-Jul-96 8436 TSSF4500 | |
bpv10nf
Abstract: 8436
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Original |
BPV10NF BPV10NF D-74025 25-Mar-04 8436 | |
telefunken ha 870Contextual Info: Tem ic BPV10NF S e m iconductors High Speed Silicon PIN Photodiode Description B PV 10N F is a high sensitive and wide bandw idth PIN photodiode in a standard T - l 'i plastic package. The black epoxy is an universal IR filter, spectrally m atched to GaA s X=950nm and G aA lA s ()t=870nm) [R em itters. |
OCR Scan |
BPV10NF BPV10N 950nm) 870nm) 870nm 15-Jul-96 telefunken ha 870 | |
Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm |
Original |
BPV10NF 2002/95/EC 2002/96/EC BPV10NF 11-Mar-11 | |
BPV10NFContextual Info: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs |
Original |
BPV10NF BPV10NF 2002/95/EC D-74025 08-Mar-05 | |
8439
Abstract: BPV10NF
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Original |
BPV10NF 950nm) 870nm) 78mm2 D-74025 8439 | |
bpv10nf
Abstract: CM294
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Original |
BPV10NF BPV10NF 2002/95/EC 08-Apr-05 CM294 | |
BPV10NFContextual Info: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links |
Original |
BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 20-May-99 | |
BPV10NFContextual Info: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links |
Original |
BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 20-May-99 | |
bpv10nf
Abstract: 8439
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Original |
BPV10NF BPV10NF D-74025 20-Apr-04 8439 | |
PIN Photodiode
Abstract: 8436 BPV10NF V 8623
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Original |
BPV10NF BPV10NF 2002/95/EC 2002/96/EC 18-Jul-08 PIN Photodiode 8436 V 8623 | |
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Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm |
Original |
BPV10NF BPV10NF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
BPV10NF
Abstract: tshf5
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Original |
BPV10NF BPV10NF 08-Apr-05 tshf5 | |
Contextual Info: Tem ic TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T -P A plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs X=950nm and |
OCR Scan |
BPV10NF 950nm) 870nm) 78mm2 D-74025 | |
Contextual Info: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links |
Original |
BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 20-May-99 | |
SFH2031
Abstract: SFH203 SFH203FA BPV10NF BPW43 KAKY
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OCR Scan |
SFH203FA BPW43 BPV10NF o63opa jihh30m. SFH203 SFH2031 SFH203 SFH203FA BPV10NF KAKY | |
8436
Abstract: BPV10NF 870nm
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BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 20-May-99 8436 870nm | |
Contextual Info: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm |
Original |
BPV10NF 2002/95/EC 2002/96/EC BPV10NF 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
BPW22
Abstract: TELEFUNKEN TF 2940 DATA BPW23 infrared emitters and detectors data book temic IRDA TRANSMITTER NSCPC87108 AUTOMATIC ROOM LIGHT CONTROLLER infrared BPV10NF rf 433 mir TFDS6000
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
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TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF | |
BPW34 application noteContextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° |
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VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note |