Untitled
Abstract: No abstract text available
Text: BOWMAR/WHITE TECHNOLOGY 55E D W W h i t e Technology, Inc. • 15lj3fcicjfl □ □ □ □ 3 6 7 ^ l^-Z7 _ MEMORY PRODUCTS M4194E Configurable 4-Megabit EEPROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES ■ User Configurable in 3 Modes * 512K Bytes x 8 Bits
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15lj3fcic
M4194E
76-Pin
150nSec,
M4194E
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Untitled
Abstract: No abstract text available
Text: BOLJMAR/UHITE 156369Ö BOWMAR/WHITE TECHNOLOGY TECHNOLOGY 7S D E§ ISL^bTÖ OOOOHSS 7 5 c Q£L£$2 3 n T - S ^ 'O ' m ° W l H J h a 4 VOLT REFERENCE HT 6.4B SERIES A, i t e FEATURES Extremely Stable Voltage Over a Wide Temperature Range Eliminates Need for Current
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Untitled
Abstract: No abstract text available
Text: 1563698 BOWMAR/ W H I T E TECHNOLOGY BOliiMAR/liJHITE TECHNOLOGY 1 7 97D D E l ISkBbTfl W White D 00314 0000314 *P -S 0 -2 -3 CRYSTAL CLOCK OSCILLATOR/DIVIDER T e c h n o lo g y . Inc* i l i i i i l l Ì É FEATURES ' .• -55 to .+J200^C Operation , § f
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10MHz;
20MHz.
FX602
8S040
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8090 microprocessor
Abstract: 8s040 BOWMAR WHITE TECHNOLOGY Erasable Programmable Logic Device 610
Text: 3: '^-sgESii 'ip S g l pS iü S Bowmar White i*wj Wî^ 3 3 ^ i 128K x 8 BIT PROGRAMMABLE EEPROM 8090 Technology FEATURES Voltage: +5.0V and Gnd Operating Temperature: -55° to +200° C Operating Current: 10mA Typ Standby Current: 1.0mA (Typ) Programming Temp: -55° to +180° C
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250nS
A0-A16
8S040
8090 microprocessor
BOWMAR WHITE TECHNOLOGY
Erasable Programmable Logic Device 610
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Untitled
Abstract: No abstract text available
Text: 1 5 6 3 6 9 8 BOWMAR/WHITE TECHNOLOGY : 7Sf. n n ? ^ 7 BOWNAR/WH]^^ ”?5 •:ir. W hO/ DE I I S b B b T Û G 0 0 D S 3 2 fl r r jl DIGITALLY PROGRAMMEED 1 \ | AMPLIFIER 1 1 W d T “7 A h it e 1 y MODEL 8089 "^ Advance « * Ê g |£ S _ FEATURES ^ OperatincfTemperature Range
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1000Hz
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Untitled
Abstract: No abstract text available
Text: BOÜIMAR/UHITE TECHNOLOGY 5SE D ISbBbTÔ 0000404 ► *»-. . v i € W W h ite 4-MEGABIT SRAM MEMORY A MODEL M4194 Kbit -, ,V '; X •. \ / T echn ologyf ln c. _ A w^Q^pwnedàub^liii^oT^ow^rJnstwmép^porporiiti^ Advance Information • \ s -•;■ '
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M4194
4194Kb
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Untitled
Abstract: No abstract text available
Text: 1563698 B OW M AR / W HI T E BOUMA R / U H I T E I T W h TECHNOLOGY TECHNOLOGY 9 7D 00322 T? 15^3^0 A ^ W B S S S tL T-5T-/H3 ^ S E R IE S 8000 A N D 8001 nmnnri onhalHI.lru nl-R iiw m af lnfllniiT ipnI.C ornoroll IW 0D 0D 32E H YB R ID V O LTA G E R EG U LA TO R S
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Untitled
Abstract: No abstract text available
Text: BiO UM AR / UJH'XT E TECHNOLOGY 07E D | WWhite • A wholly owned subsidiary of BoWmar Instrument Corporation Units -55 +150 °c S upply Voltage, O perating 4.75 5.25 VDC S upply Current, O perating — 35 — mA S upply Current, Sleep Mode — 2.0 — mA
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Froiii-55Â
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bowmar
Abstract: No abstract text available
Text: T ech n o lo M 0D ELM 4194K bit I ±~«4SS FEATURES User Configurable 3 Modes: 512K Bytes x 8 Bits 256K Bytes x 16 Bits 128K Bytes x 32 Bits Single Power, 5.0 Volts Operation Low Power Standby Compatible with all Microprocessors 100% CM OS Design MIL Temperature Range
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4194K
M4194
M4194Kb
bowmar
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Untitled
Abstract: No abstract text available
Text: XTW hite Technology, Inc. □ vcc A18 [ I 1 32 A16 C 2 31 □ A15 A14C 3 30 □ A17 A12C 4 29 □ WE A7 □ 5 28 H A13 A6 C 6 27 □ A8 A5C 7 26 □ A9 A4 C 8 25 □ A11 A3 C 9 24 □ OE A2 C 10 23 □ A10 □ cs A1 C 11 22 A O C 12 21 □ 1/07 l/OOH 13 20 □ 1/06
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WS-512K8-XPX
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203d6
Abstract: No abstract text available
Text: Bowmar/lHfhite 128K x 8 BIT SRAM C8-M128 SERIES Technology PIN DIAGRAM NC □ 1 A16 C 2 A14 □ A12 □ A7 32 3 V c c 31 □ A 15 3 30 3 N C 4 24 □ W E c 5 6 28 3 A 13 27 □ A 8 A6 c A5 c A4 A3 c 8 c 9 c 10 A1 □ 11 AD □ 12 21 DO □ 13 20 3 D6 D1 □
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C8-M128
120nS
15A14
12A10--
203d6
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Untitled
Abstract: No abstract text available
Text: BOUHAR/lilHITE T E C H N O L O G Y SOE D • lSt,3kTfl DQOOSEti MID ■ TTWhite Technology, Inc. MEMORY PRODUCTS 0 '/ 0 i5 I/O24 O O '/O s O 1/O 14 I/O25 O IS O csz O l» io O gnd O '/O ta I/O26 O WE4 O A i3 O 1/O 11 O 1/O 12 AeO O A i4 O aio O ö i A?0 O A i5
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I/O24
I/O25
I/O26
I/O29
S-128K320
18053J
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js 8017
Abstract: 17VDC ICL 8007 C 0-50Vdc geophone 050VDC 8008
Text: n i~ir n 'm frifn T -i'yjjij BOUMA R / b J H I T E TECHNOLOGY 07 »TJ B o w m a r/IH Ih ite G D OGa ^M Ö 1 T ^ J i:/3 HYBRID THREE TERMINAL VOLTAGE REGULATORS T e c h n o lo g y ; ir/>-w , 8007 8008, 8009 iv- Siili mmmsmmim mism. F lâ T ü iiS M Provides £ 1% Temperatur Stability
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Untitled
Abstract: No abstract text available
Text: W White Technology, Inc. 1 12 23 o O l 9 O c& 34 45 1/024 O O l'0 'i 1/025 O c s iO 1/030O C>Oio C>GND Ol»13 1/026 O w ia O 1/029 O 1/028 O O O 0 is WE-128K32-XHX 56 < i O l» a MEMORY PRODUCTS I/Os, 0 •- 4 Megabit CMOS EEPROM Module 0^13 O i/Oii 0 l/0 ,2
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WE-128K32-XHX
1030O
1027O
150nS
200nS
66-pin,
128Kxconfigurable
1024K
200nS,
80C31
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A14C
Abstract: No abstract text available
Text: Bowmar Ulfhite P W lf llit r / — m ie 3 2 Kx8 B ,T PROGRAMMABLE EEPROM Technology 8023 PIN DIAGRAM A14C 1 A12C 2 28 3 Vcc 27 □ WE A7C 3 A6 C 4 26 □ A13 25 □ A8 24 □ A9 23 □ A11 A5C 5 A4 £ 6 A3C 7 A2C 8 A 1C 9 22 DO E 21 □ A10 20 D C E ADC 10
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DI/05
I/02C
250nS
A14C
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Untitled
Abstract: No abstract text available
Text: . BOUM A R /U H IT E TECHNOLOGY SDE D • 15^=10 W W n i t e Technology, Inc. D aaaS3n T il ■ Btil T 7 = . ^ MEMORY PRODUCTS PRELIMINARY WS-64M-XX 3.5" 8 8 .9 m m 1 1 2 3 4 DO D1 02 5 6 7 8 e 04 05 10 11 12 03 De 07 08 09 0)0 011 D12 D13 D14 016 E E CM
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WS-64M-XX
811B3
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M4194E
Abstract: 76PIN
Text: MEMORY PRODUCTS W U U h itC Technology, Inc M4194E Configurable 4-Megabit EEPROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES • User Configurable in 3 Modes * 512K Bytes x 8 Bits * 256K Bytes x 16 Bits * 128K Bytes x 32 Bits ■ 100% CMOS Design
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M4194E
76-Pin
M4194E
150nSec,
100ns
76PIN
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20 pin IC AL 6001
Abstract: No abstract text available
Text: 43 C 0 0 1 6 3 D 15 6 3 6 9 8 B O W M A R / W H I T E T E C H N O L O G Y - -IShabìfl O O D D l b B -T-58-07 - 4 I PRECISION VOLTAGE REFERENCE I I 6001 MIL TEMPERATURE COMPONENTS -x- ^ ^Wfi • FEATURES
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--T-58-07
0P-02E
OP-07
20 pin IC AL 6001
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Untitled
Abstract: No abstract text available
Text: W White Technology, Inc. 1 MEMORY PRODUCTS 12 23 Ol/Oe O w & O i/o is 1/024 0 Vcc O 1 /0 3 ,0 • Ol/Os O cs* Ol/O'* 1/025 0 CS4O 1/0 3 0 O O i/O io O 0>/013 1/026 O W E4O 1/0 2 9 O O A 13 O l/ O n 0 l/012 A sO 1 /0 2 7 O I/0280 O am O aio OOE At O 0 *1 5
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l/012
I/0280
WF-128K32-XHX
200nS
66-pin,
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85040 orga
Abstract: No abstract text available
Text: tJbE D • ISbBbTfl TTWhite Technology, Inc. Vpp C A19C 2 A16C 3 A15C 4 A12 C 5 A7C 6 ^ A 3 C 10 A 2 C 11 25 □ ÖE 24 HA10 A1 C 12 AOC 13 DOC 14 23 I C E 22 J D 7 21 u D6 D1 C 15 D 2 C 16 20 U D5 19 J DA C 17 18 J D3 ■ BUT WF-1024K8-200 31 U A17 30 U A14
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D000S10
WF-1024K8-200
10uSec
17554J
85040 orga
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Untitled
Abstract: No abstract text available
Text: BOIiinAR/UHITE TECHNOLOGY 4bE D • IShBtlfl TTW h ite Technology, Inc. 0 ■ BülT7=4SW?—«2-7 MEMORY PRODUCTS PRELIMINARY A1 8 C 1 A1 6 C 2 32 JV cc 31 H W E A1 5 C 3 A1 2 Ü 4 30 H A 17 A7 C 5 28 H A 13 A6 E 6 27 H A8 WE-512K8-150 29 H A 14 A5 C 7 26 H A9
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WE-512K8-150
AO-A18
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Untitled
Abstract: No abstract text available
Text: W W hite Technology, Inc. COMPUTER PRODUCTS H Mx 39 E a d o POO P12E 3 38 E A D1 P01 P13C 4 37 C 5 36 P15 E 35 EA EA EA EA EA P02 p m P16L 34 P03 D4 P04 D5 P05 D6 P06 32 E A D 7 P07 R x D G 10 31 51 a 33 11 30 1 N T 0 C 12 29 P33 1NT1 E 13 28 T O C 14 27
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80C31
WC8-P31F-64X
80C88
68881FPC
C8-P31F-64,
17592J
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Untitled
Abstract: No abstract text available
Text: XTWhite Technology, Inc. MEMORY PRODUCTS NCC 1 C\J co A16C 2 31 A14C 3 A12Ü 4 A7 E 5 30 □ NC 29 28 □ □ WE A13 A6 C 6 A 5Ü 7 A4E 8 27 □ A8 A3 n 9 A2 C 10 A 1 |I 11 24 □ ÔË 23 □ A10 22 □ c s AO L 12 21 □ I/07 i/o o L 13 1/01 r 14 20 □ I/06
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WS-128K8
02821O
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E512
Abstract: No abstract text available
Text: WW hite Technology, Inc MEMORY PRODUCTS PRELIMINARY WE-512K8-150 A18 Í 1 A16 [ 2 A15 c 3 A12 [ 4 A7 A6 A5 A4 A3 A2 [ 5 c 6 I 7 Í 8 Í 9 Í 10 c 11 c 12 i/ o o : 13 1/01 [ 14 I/0 2 [ 15 V s s [ 16 A1 A0 32 ] V c c 31 ] WE 30 ] A17 512K x 8 BIT CMOS EEPROM
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i/00-i/07
WE-512K8-150
E-512K
E512
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