BOOKS DATA SHEET FOR ALL DIODE Search Results

nec photocoupler

Abstract: PS2913-1 PS2913-1-F3
Contextual Info: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2913-1 SINGLE Tr. OUTPUT, HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE −NEPOC Series− FLAT-LEAD PHOTOCOUPLER TM DESCRIPTION The PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

PS2915-1

Abstract: PS2915-1-F3
Contextual Info: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2915-1 HIGH CTR, AC INPUT RESPONSE TYPE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2915-1 is an optically coupled isolator containing GaAs light emitting diodes and an NPN silicon

TC-2460

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ325,325-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 5.0 ±0.2 FEATURES 2 3 1.1 ±0.2 • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) +0.2 Gate to Source Voltage (AC)

d1832

Abstract: DC-M4 2SJ325 325-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ325,325-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 5.0 ±0.2 FEATURES 2 3 1.1 ±0.2 • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) +0.2 Gate to Source Voltage (AC)

nec photocoupler

Abstract: NEC ps2911 pc 100 nec nec 2503
Contextual Info: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2911-1 HIGH CTR, 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.

A CLIPPER CIRCUIT APPLICATIONS

Abstract: C11531E RD10FM RD11FM RD12FM RD13FM RD15FM RD16FM RD18FM RD51FM
Contextual Info: DATA SHEET ZENER DIODES RD4.7FM to RD51FM 1 W PLANAR TYPE 2-PIN POWER MINI-MOLD ZENER DIODES The RD4.7FM to RD51FM are zener diodes with an allowable PACKAGE DRAWING UNIT: mm dissipation of 1 W and a planar type 2-pin power mini-mold. FEATURES • This diode is ideal for high density mounting due to about 65%

NR6300EZ

Abstract: PX10160E NEC JAPAN 567 p1070 NR6300
Contextual Info: DATA SHEET PHOTO DIODE NR6300EZ φ 30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES • Small dark current ID = 5 nA • Small terminal capacitance

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based

DIODE C 8Ph

Abstract: ak4 power tr
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8PH is a low capacitance type diode developed for ESD

IEC-61000-4-2

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a diode developed for ESD (Electrostatic 2.8 ± 0.2 +0.1

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a low capacitance type diode developed 2.8 ± 0.2 +0.1

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based

nec example of lot number

Abstract: NEC semiconductor PS2932-1 PS2932-1-F3 PS2933-1 PS2933-1-F3
Contextual Info: PRELIMINARY DATA SHEET PHOTOCOUPLER PS2932-1, PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2932-1, PS2933-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8RH is a low capacitance type diode developed

IEC-61000-4-2

Abstract: DIODE C 8Ph
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION The NNCD6.8PH is a diode developed for ESD (Electrostatic

2SD1843

Abstract: diode dumper
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA

d1541

Abstract: IEC-61000-4-2
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6H, NNCD6.8H LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUAD TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) This product series is a low capacitance type diode developed for ESD

NNCD36J

Abstract: IEC-61000-4-2 NNCD10J NNCD16J
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE These products are a diode developed for ESD (Electrostatic 1.4 ± 0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on

Contextual Info: DATA SHEET PHOTO DIODE NR8800FS-CB φ 80 m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS DESCRIPTION The NR8800FS-CB is an InGaAs avalanche photo diode module with multi mode fiber, and can be used in OTDR systems. FEATURES • Small dark current

NEC semiconductor

Abstract: C11531E dumper diode dumper
Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect

A CLIPPER CIRCUIT APPLICATIONS

Abstract: Contact Electronics nncd18 IEC-61000-4-2 NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J DIODE 6j
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD FLAT TYPE DESCRIPTION products (Electrostatic are a Discharge) diode developed absorption. for Based ESD on 1.4 ± 0.1 the 1.0 ± 0.1

Transistor NEC 30

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode

ce1a3q

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for