MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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2N3417
Abstract: NPN transistor ECB TO-92 transistor BO 540
Text: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation
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2N3417
2M3417
500mA
NPN transistor ECB TO-92
transistor BO 540
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servomoteur
Abstract: moteur pas a pas codeur incremental EL6022 BK9105 CX5020 EL6731 beckhoff el6751 DIN EN 66025 KL3458
Text: BECKHOFF New Automation Technology Aperçu des produits | 2009 PC Embarqué PC Industriel PC Industriel Bornes d‘E/S E/S EtherCAT Lightbus Boîtier IP 67 Technique d’Entraînement Motion TwinCAT Automatisation Cartes PC de Bus de Terrain, Switches PC Industriel
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DK1405-0309
servomoteur
moteur pas a pas
codeur incremental
EL6022
BK9105
CX5020
EL6731
beckhoff el6751
DIN EN 66025
KL3458
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IEC 947 EN60947
Abstract: d4bn D4BS-15FS norme UL csa E76675 IEC947-5-1 moteur pas a pas EN60947-5-1 GS-ET-15 IEC529
Text: INTERRUPTEUR DE SECURITE ID4BS Interrupteur de sécurité à clé Clé de fonctionnement spéciale évitant les fraudes Large plage de température de fonctionnement : – 40 à 80 oC Contacts à manoeuvre EN60947–5–1 positive d’ouverture Pas de montage et forme du boîtier conformes à la
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EN60947
EN50041
IEC529)
EN45014
EN60947-5-1
IEC947-5-1)
UL508
GS-ET-15
R9351022
IEC 947 EN60947
d4bn
D4BS-15FS
norme UL csa
E76675
IEC947-5-1
moteur pas a pas
EN60947-5-1
GS-ET-15
IEC529
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Untitled
Abstract: No abstract text available
Text: 2 DATE REV ECN APP'D. BY 5 -6 -0 3 BO 5995 JM 0 3 -0 9 -0 4 B1 6351 JMB 1 -1 9 -0 6 B2 7441 JM 2 -9 -1 1 B3 9125 SMN 5 -2 3 -1 2 B4 9475 SMN NOTES: 0 .2 6 0 [ 6 . 6 0 ] 1 - PLUG KIT CONSISTS OF : PRE-INSERTED PLUG HOUSING & SHIELD LOAD BAR FERRULE 2 - MATERIALS :
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CT360109
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BO5988
Abstract: 3 BO 356 5988 bo 947 BO 63 kt3 LED
Text: Sicherheitstechnik Not-Aus-Modul BO 5988 safemaster 0210952 • • • • • • • • • • • • • • • • Funktionsdiagramm • Taster Ein nach der EG-Richtlinie für Maschinen 98/37/EG nach IEC/EN 60 204-1, IEC/EN 60 204-1 Sicherheitskategorie 4 für Sofortkontakte nach EN 954-1
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98/37/EG
22ontakt
S11/A3
D-78114
BO5988
3 BO 356
5988
bo 947
BO 63
kt3 LED
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2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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Untitled
Abstract: No abstract text available
Text: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection
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TSMBJ1005C
TSMBJ1024CB
E152273
MSC0107B
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Untitled
Abstract: No abstract text available
Text: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection
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TSMBJ1005C
TSMBJ1024CB
E152273
MSC0107B
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PDF
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T1018
Abstract: T1022C DO215AA TSMBJ1005C TSMBJ1005CB TSMBJ1006C TSMBJ1024CB T1005C
Text: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection
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TSMBJ1005C
TSMBJ1024CB
E152273
MSC0107B
T1018
T1022C
DO215AA
TSMBJ1005C
TSMBJ1005CB
TSMBJ1006C
TSMBJ1024CB
T1005C
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BD946
Abstract: BD948 IN 3319 B
Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.
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BD944
BD946
BD948
BD944
T-33-19
BD946
G0M30Ô
IN 3319 B
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bo 947
Abstract: No abstract text available
Text: tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone M-947 combines switched-capacitor and dig ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is contained in a 22-pin DIP,
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M-947
22-pin
12-volt
579-MHz
22121-20th
bo 947
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bo 947
Abstract: BDP947C dp947
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B
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BDP948,
BDP950
BDP947
Q62702-D1335
Q62702-D1337
OT-223
OT-223
300ns;
bo 947
BDP947C
dp947
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th1018
Abstract: bo 947 THSMCJ1018C THSMCJ1022C MSC1370 TD5010
Text: THSMCJ1018C and THSMCJ1022C 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • Bidirectional Transient Voltage Protection Initial Breakdown Voltage of 220 to 275 volts Positive Resistance Breakover Voltages of 300 to 350 volts maximum
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THSMCJ1018C
THSMCJ1022C
UL94V-O
-400C
1500C
MSC1370
th1018
bo 947
THSMCJ1018C
THSMCJ1022C
TD5010
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2SB947
Abstract: 2SB947A
Text: Power T ransistors 2SB947, 2SB947A 2SB 947, 2S B 947A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Low Voltage Switching • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEcsao • H igh s p e e d sw itch in g • “F ull P a c k ” p ack ag e fo r sim plified m o u n tin g on a h e a t sink w ith one
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2SB947,
2SB947A
2SB947
2SB942/A)
32flS2
2SB947A
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN37741PT 6.6mm type-1/3 1330k pixel CCD Area Image Sensor • Overview M Di ain sc te on na tin nc ue e/ d The MN37741PT is a 1/3-type, 1,330k pixel CCD area image sensor suitable for SXGA. The use of primary color (RGB Bayer arrangement) onchip color filters provides excellent color reproduction.
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MN37741PT
1330k
MN37741PT
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b0948
Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.
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bd944
bd946
bd948
711002b
BD943;
BD948.
b0948
b0946
BD944 philips
b0944
m lc 945
T 948
BD943
BD948
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN37741PT 6.6mm type-1/3 1330k pixel CCD Area Image Sensor • Overview Part Number Size di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur
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MN37741PT
1330k
MN37741PT
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HCT4067M
Abstract: V6 69 diode
Text: 74HC/HCT4067 M SI 16-CHANNEL AN A LO G M U LT IP L E X E R /D E M U LT IP L E X E R FEATURES T Y P IC A L • Low "O N " resistance: 80 H typ. at V c c = 4.5 V 70 £2 (typ.) at V c c “ 6.0 V 60 (typ.) at V c c " 9-0 V typical "break before make" built-in
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74HC/HCT4067
16-CHANNEL
HCT4067M
V6 69 diode
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2SD471
Abstract: 2SB564 BO9477
Text: 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS ECB 30V Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 25V Emitter-Base Voltage
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2SD471
2SB564
100nA
100mA
2SD471
2SB564
BO9477
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2SC1675
Abstract: T8224
Text: IO-92B 2SC1675 Is designed for use in AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner. ABSOLUTE MAXIMUM RATINGS ECB Collector- •Bai Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction &. Storage Temperature
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IO-92B
2SC1675
250mW
T8224
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2SC2603
Abstract: 2SC2603 E 2SC2603 F
Text: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature
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2SC2603
O-92B
300mW
VCB-50V
0-50V
100mA
Box69477,
430l81-6
34i93363
2SC2603 E
2SC2603 F
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ebc 300
Abstract: MPS A92 transistor MPS-A92
Text: PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage
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MPS-A92
O-92A
500m/
625mV
20MHz
Boxfc9477,
ebc 300
MPS A92 transistor
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F1243
Abstract: t1243
Text: Philips Semiconductors-Signetics Document No. 853-0040 ECN No. 94761 Date of issue October 7 ,1 988 Status Product Specification FAST Products FEATURES • High impedance NPN base Inputs for reduced loading 70pA in High and Low states • Low power, llght-bus loading
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74F1242
74F1243
1/30th
500ns
F1243
t1243
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