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DSTC57357003 Abstract: No abstract text available Text: TC5735 Wide Band Power FET GaAs Field Effect Transistor § High reliability Description The TC5735 is a C band Schottky barrier Field Effect Transistor with a 0.5µm Aluminium gate, source via holes and gold plated heatsink for a minimum source parasitic inductance and a better	Original	PDF	TC5735 TC5735 BMH77P 28dBm DSTC57357003 DSTC57357003
DSTC65197003 Abstract: TC6519 high power FET Transistor BMH77P Text: TC6519 C Band Power FET GaAs Field Effect Transistor Description The TC6519 is a C band Schottky barrier Field Effect Transistor with 0.7µm Aluminium gate, source via holes and gold plated heatsink for a minimum source parasitic inductance and a better thermal	Original	PDF	TC6519 TC6519 BMH77P 30dBm DSTC65197003 DSTC65197003 high power FET Transistor BMH77P
ec6519 Abstract: No abstract text available Text: JC6519/EC6519 INFORMATION C BAND P O W E R FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • • 30dBm output power at 1dB gain compression High associated gain: 9dB @8GHz Low source inductance High power added efficiency: 30% @8GHz	OCR Scan	PDF	JC6519/EC6519 30dBm BMH77p TC6519-A2A/00 BMH209 TC6519-A4A/00 EC6519-99A/00. TC6519 250mA TC6519/EC6519 ec6519
Untitled Abstract: No abstract text available Text: TC5735 PRELIM INARY INFORM ATION C BAND POWER FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • 28dBm output power at 1dB gain compression High associated gain : 10dB @8GHz Low thermal resistance Low source inductance • High power added efficiency : 35% @8GHz	OCR Scan	PDF	TC5735 28dBm BMH77p TC5735-A2A/00 TC5735 160mA