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    SOT89 bc

    Abstract: BCX51 BCX52 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 DSA003675
    Text: I SOT89 NPN SILICON PLANAR MEDIUM ISSUE 3- POWER TRANSISTORS FEBRUARY 1996 PARTMARKING m DETAILS: - C - BA BCX54-10 - BC BCX54- 16 - BD BCX55 - BE BCX55-10 - BG BCX55- 16 - BM BCX56 - BH BCX56-10 - BK BCX5616 - BL BCX54 COMPLEMENTARY BCX54 - BCX54 BCX51 E


    Original     		PDF BCX54 BCX54-10 BCX54- BCX55 BCX55-10 BCX55- BCX56 BCX56-10 BCX5616 SOT89 bc BCX51 BCX52 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 DSA003675

    h78l05

    Abstract: C4149 H78LXXAM H78L12 Marking BA SOT89 TL 873 H78LXX H78LXXAA h78L0 C3745
    Text: HI-SINCERITY Spec. No. : IC200403 Issued Date : 2004.03.01 Revised Date : 2004.08.31 Page No. : 1/10 MICROELECTRONICS CORP. H78LXXAM / BM H78LXXAA / BA H78LXX Series Pin Assignment 3-TERMINAL POSITIVE VOLTAGE REGULATORS 1 2 3-Lead Plastic SOT-89 Package Code: M


    Original     		PDF IC200403 H78LXXAM H78LXXAA H78LXX OT-89 100mA 183oC 217oC 260oC h78l05 C4149 H78L12 Marking BA SOT89 TL 873 h78L0 C3745

    H7805

    Abstract: H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking
    Text: HI-SINCERITY Spec. No. : HM200301 Issued Date : 1998.04.08 Revised Date : 2003.05.13 Page No. : 1/5 MICROELECTRONICS CORP. H431AM/BM/CM AJDUSTABLE SHUNT REGULATOR Description The H431XM series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage


    Original     		PDF HM200301 H431AM/BM/CM H431XM OT-89 50ppmwithout H431AM, H431BM, H431CM H7805 H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking

    H431AM

    Abstract: H431BM H431CM
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.04.08 Revised Date : 2001.02.15 Page No. : 1/4 H431AM/BM/CM AJDUSTABLE SHUNT REGULATOR Description The H431XM series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The


    Original     		PDF H431AM/BM/CM H431XM 50ppm/ H431AM, H431BM, H431CM H431AM H431BM H431CM

    Untitled

    Abstract: No abstract text available
    Text: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C BCX54-16 – BD BCX55-16 – BM BCX56-16 – BL E


    Original     		PDF BCX54 BCX55 BCX56 BCX54-10 BCX55-10 BCX56-10 BCX54-16

    AX78L05

    Abstract: FE0004 AX78LXX C3745 c3641 SOT-89 code BA
    Text: Page No. : 1/10 AX78LXXAM/BM AX78LXXAA/BA AX78LXX Series Pin Assignment 3-Terminal Positive Voltage Regulators 1 2 3-Lead Plastic SOT-89 Package Code: M Pin 1: VOUT Pin 2: GND Pin 3: VIN 3 Description 3-Lead Plastic TO-92 Package Code: A Pin 1: VOUT Pin 2: GND


    Original     		PDF AX78LXXAM/BM AX78LXXAA/BA AX78LXX OT-89 100mA 100mA OT-89 183oC 217oC 260oC AX78L05 FE0004 C3745 c3641 SOT-89 code BA

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 30dBm FPD3000SOT89CESQ FPD3000SOT89CESR FPD3000SOT89PCK DS111103 85GHz

    fpd3000

    Abstract: 3024D FPD3000SOT89
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m


    Original     		PDF FPD3000SOT8 FPD3000SOT89CE FPD3000SOT89CE 3000m 30dBm 45dBm FPD3000SOT89CE: FPD3000SOT89CESQ FPD3000SOT89CESR fpd3000 3024D FPD3000SOT89

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 3000Pm FPD3000SOT89CESQ FPD3000SOT89PCK 85GHz FPD3000SOT89CESR DS111103

    Untitled

    Abstract: No abstract text available
    Text: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Mechanical Data Features • • • • • • • • • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF 500mV BCX51, AEC-Q101 J-STD-020 DS35369

    BCX56

    Abstract: BCX53B bcx55 bcx54 BCX56E Bcx56-16 SOT89 bc BCX5616
    Text: Not Recommended for New Design Please Use BCX5616 BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS:BCX54 – BA BCX54-10 – BC BCX55 – BE BCX55-10 – BG BCX56 – BH BCX56-10 – BK C


    Original     		PDF BCX5616 BCX54-16 BCX55-16 BCX56-16 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 BCX56 BCX53B bcx55 bcx54 BCX56E Bcx56-16 SOT89 bc BCX5616

    Marking BA SOT89

    Abstract: BCX5616TA BCX56TA bcx56-16t bcx54ta
    Text: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF 500mV BCX51, AEC-Q101 J-STD-020 DS35369 Marking BA SOT89 BCX5616TA BCX56TA bcx56-16t bcx54ta

    BCX51

    Abstract: BCX55TA Marking BA SOT89 MARKING BM SOT89 BCX5416
    Text: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF 500mV BCX51, AEC-Q101 J-STD-020 DS35369 BCX51 BCX55TA Marking BA SOT89 MARKING BM SOT89 BCX5416

    AECQ-101

    Abstract: AECQ101 BCX5616TA
    Text: BCX 54 /55 /56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • • • • • • • • • • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain Groups 10 and 16 Epitaxial Planar Die Construction


    Original     		PDF 500mV BCX51, AEC-Q101 J-STD-020 MIL-STD-202 DS35369 AECQ-101 AECQ101 BCX5616TA

    FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263

    FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh

    BCX56

    Abstract: BCX55-10-BG BCX54
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 BCX54 BCX55 BCX56 * O PAR TM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX54 16 - BD BCX55 - BE BCX55-10 ~ BG BCX55-16 - BM BCX56 - BH BCX56-10 - BCX56-16 - BL BK C O M PLEM ENTAR Y TYPES:


    OCR Scan     		PDF BCX54 BCX55 BCX56 BCX54-10 BCX55-10 BCX56-10 BCX55-16 BCX56-16 BCX55-10-BG

    Untitled

    Abstract: No abstract text available
    Text: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996 O % PARTM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL 111 C O M PLEM EN TA RY TYPES:BCX54 - BCX51


    OCR Scan     		PDF BCX54 BCX55 BCX56 BCX54 BCX54-10 BCX55 BCX55-10 BCX56 BCX56-10 BCX54-16

    Untitled

    Abstract: No abstract text available
    Text: Direction Of Feed O 0|0j0|0|0|0|0 Polarized Components □DODDODD Direction Of Feed o o o • o o o mm Bm mSmm m Tjgjl □ □ □ H SOT143 SOT25 1, . igg igj vg g g \ $ S J O O O O Q~Ol \o O O o1 SOT23 Crystal )Q Cathode O /o"5 Melf &SOD80 o ooooo G O O


    OCR Scan     		PDF OT143

    Untitled

    Abstract: No abstract text available
    Text: ü g ii$ B 4 Í W r o I £ y £ KJ c W c kJ a ti c c O TJ oo I V: SS E ~4_ c t o J, S So v< "S 0.51MIN I UMAX V: “ “ : ? # £ g W MW Bm DIP 18 KO I S -*0 o T) oí 1 V': m • mm i m m w m DIP22 3 3 KD i O m m & m m 2.54 N t•o y y y v u u y y u u g y


    OCR Scan     		PDF 51MIN DIP22 QFP56-AI QFP64-B2 QFP64-B3 QFP64-CI QFP64-DI QFP64-EI QFP80-CI

    TK112

    Abstract: No abstract text available
    Text: IN TEG R A TED C IR C U IT S 47 V o lt a g e r e g u la t o r IC s S u r fa c e m o u n tin g /fJ l/T -y b i 'i U - F e a tu re s <*> TK 112EO B M TK 112D D B U series series • • • • • • • • • Small difference between input and output voltages. (0.12V at lo = 60mA)


    OCR Scan     		PDF 112EO 170pA TK112 OT23L-6 OT89-5 60mA0# 170pA, 400pA 400mA TK112