P4N20
Abstract: ADT8A
Text: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000
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PM09610S1
PM3350
8POKT10HBTTj
P4N20
ADT8A
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FLU17ZM
Abstract: ED-4701 SM 1628
Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE
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FLU17ZM
FLU17ZM
ED-4701
SM 1628
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805-200-4
Abstract: hirschmann automotive turbocharger measurement b 647 44
Text: 647 SERIES Smart Rotary Actuators TYPICAL APPLICATIONS: Exhaust Valves Turbocharger Features/Benefits: • Brushless DC Reliability • Fast response, high torque output • On-board power switching • Auto calibration, soft stops • Diagnostic capability
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02/OCT/2007
14/OCT/2009
805-200-4
hirschmann automotive
turbocharger measurement
b 647 44
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Untitled
Abstract: No abstract text available
Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=35.5dBm typ. High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product
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FLU35ZME1
FLU35ZME1
25deg
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Untitled
Abstract: No abstract text available
Text: FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm typ. High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product
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FLU17ZME1
FLU17ZME1
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101S12
Abstract: FLU35ZME1
Text: FLU35ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE
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FLU35ZME1
FLU35ZME1
25deg
101S12
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PDF
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IM320
Abstract: fujitsu flu fujitsu gaas fet L-band
Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE
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FLU17ZM
FLU17ZM
FCSI0202M200
IM320
fujitsu flu
fujitsu gaas fet L-band
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PDF
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32c13
Abstract: No abstract text available
Text: I0 <2CAB@G0 B/<2/@20CL0F0CL00 =B>@7<B I08E+0=@0C8+0 <>CB I0(7F0(72320(673:2 I0 447173<1G0C>0B=02 I0 7F320AE7B167<504@3?C3<1G #30 -'#/0#% #*/.020A,(&! /&+*. )3:31=;A/B/1=; &@=13AA0=<B@=: ,7@3:3AA0$3BE=@9
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20CL0F0CL00
30E7B60DL0F0CL0>
13AA0
347BA
32C1320
/27/B320<
B/530
28CAB
32c13
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PDF
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high power FET transistor s-parameters
Abstract: ED-4701 FLU35ZM High Power GaAs FET
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE
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FLU35ZM
FLU35ZM
high power FET transistor s-parameters
ED-4701
High Power GaAs FET
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PDF
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Untitled
Abstract: No abstract text available
Text: MB86831 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier GENERAL DISCUSSION
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MB86831
32-BIT
FP176-P-2424-1
FPT-176P-M01)
MB86831
176-LEAD
FF176001S-3C-3
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PDF
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4BE67
Abstract: C356D E5 0D E7834
Text: 123456789 ABC9ADEDF9B9CED9 D9 DF 9B 9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A
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23435671839A5BCDBE41
D4D92
84D84A5673DF4
A75A904A
A567E4.
D84A57
46A646
D64FA97A
4C489A
E7C52E9
4BE67
C356D
E5 0D
E7834
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Untitled
Abstract: No abstract text available
Text: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATA SHEET FUJITSU MAY 1997 • • • • FEATURES • 66MHz, 80MHz and 100 MHz versions each with clock doubling capability • SPARC high performance RISC architecture • 8 window, 136 word register file
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MB86832
32-BIT
66MHz,
80MHz
256Mbyte
QFP176-P-2424-1
MB86832-66/80/100
FPT-176P-M01)
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PDF
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Untitled
Abstract: No abstract text available
Text: MB86831 FUJITSU SPARCIiteCPU O cto b e r 1996 F unction S pe cifica tion ADVANTAGES — Burst Mode Support — 6 Programmable Chip Select Functions CPU Core Advantages — 6 Programmable Wait State Controls • IU Integer Unit — Supports 8/16-bit Bus — 66MHz/80MHz/100MHz* operation
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MB86831
8/16-bit
66MHz/80MHz/100MHz*
Window/136
32-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: MB86832 SPARCIite SERIES 32-BIT RISC EMBEDDED PROCESSOR DATASHEET FUJITSU MARCH 1998 Single vector trapping FEATURES Debug Support Unit 0.35 micron gate, 2-level metal CMOS technology, 3.3V internal with 3.3 or 5V I/O 66, 80, or 100 MHz CPU with on-chip clock multiplier
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MB86832
32-BIT
B86832
MB8683X
FP176-P-2424-1
FPT-176P-M01)
MB86832-66/80/100
176-LEAD
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HY512260TC50
Abstract: HY512260JC50 hy512260 HY512260SLRC HY512260JC Y9543 HY512260JC-50
Text: «HYUNDAI H Y 5 1 2 2 6 0 S e r ie s 128KX 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY512260 is the new generation and fast dynamic RAM organized 131,072 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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128KX
16-bit
HY512260
400mil
40pin
40/44pin
11-00-MA
HY512260TC50
HY512260JC50
HY512260SLRC
HY512260JC
Y9543
HY512260JC-50
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PDF
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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2SK786
Abstract: fsjc EER 35 kd
Text: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss
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T-39-13
GoiflT34
2SK786
-55to
51DTH
fsjc
EER 35 kd
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PDF
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pj 0189 diode
Abstract: STMicroelectronics DIODE marking code AE pj-25 diode smaj1 cg 88a SMA marking PJ pj 88 diode diodes STmicroelectronics marking DBK pj 936 SMAJ15A-TR
Text: SMAJ5.0A-TR,CArTR SMAJ188ArTR,CA-TR TRANS IL FEATURES • PEAK PULSE POWER : 400 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ JEDEC REGISTERED PACKAGE OUTLINE
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SMAJ188ArTR
pj 0189 diode
STMicroelectronics DIODE marking code AE
pj-25 diode
smaj1
cg 88a
SMA marking PJ
pj 88 diode
diodes STmicroelectronics marking DBK
pj 936
SMAJ15A-TR
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PDF
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diode s 30ca
Abstract: BM 2ca SMAJ15A-TR
Text: SGS-THOMSON » glMlLiCTIHMDOS SMAJ5.0A-TR,CA-TR SMAJ188A-TR,CA-TR TRANS IL FEATURES • PEAK PULSE PO W ER : 400 W (10/1 OOO^s ■ STAND OFF VOLTAG ERANG E : From 5V to 188V. ■ . ■ ■ UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSETIM E
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J188A
diode s 30ca
BM 2ca
SMAJ15A-TR
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PDF
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fujitsu flu
Abstract: fujitsu gaas fet L-band
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE
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FLU35ZM
FLU35ZM
FCSI0202M200
fujitsu flu
fujitsu gaas fet L-band
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PDF
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ELECTRONIC circuit diagram of digital hearing aid
Abstract: MDI81 sub-picture dct HM5216165 low cost hearing aid circuit diagram iso 13818-2 scr T103 CC1R601 t308 uPD4516161
Text: O V E R V IE W CHAPTER 1 1.1 1.2 FEATURES ♦ Supports system-I eve I navigation processing ♦ Supports D V D 1 .OVideo O b je c t VOB b it streams ♦ Decodes MPEG-2 and MPEG-1 video in real tim e ♦ Display: NTSC (720x480 @ 60 fps) and PAL (720x576 @ 50 fps)
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720x480
720x576
b72m05
0DD13
ELECTRONIC circuit diagram of digital hearing aid
MDI81
sub-picture dct
HM5216165
low cost hearing aid circuit diagram
iso 13818-2
scr T103
CC1R601
t308
uPD4516161
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PDF
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61a3 mosfet
Abstract: m21 sot23 transistor fairchild aa11 L0DA A10 sot23-5 transistor m21 sot23 h1 sot23-5 honda 20 pin connector pinout ADSP-TS101S f21 diode sot23
Text: ADSP-TS101S EZ-KIT Lite Evaluation System Manual Revision 1.1, March 2004 Part Number 82-000635-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2004 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written
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ADSP-TS101S
61a3 mosfet
m21 sot23 transistor
fairchild aa11
L0DA
A10 sot23-5
transistor m21 sot23
h1 sot23-5
honda 20 pin connector pinout
f21 diode sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: MB86831 FUJITSU S P A R C Iite S E R IE S 3 2 -B IT R IS C E M B E D D E D P R O C E S S O DATA S H E E T FE B R U A R Y 199 Built-in Internal Clock frequency multiplier circuit FEATURES Single vector trapping 66MH/., 80MHz and 100 MHz. versions each with
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MB86831
66MH/.
80MHz
256Mbyte
MB8683.
MB8683X
B86831-66/80/100
176-LEAD
FF176001S-3C-3
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PDF
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1AD1S
Abstract: No abstract text available
Text: "HYUNDAI H Y 5 1 1 8 2 6 0 J ïe r ie s 1 M x 1 6 - b it C M O S D R A M w it h 2 C A S &W PB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5118260
16-bit.
800JBSC
1AD16-10-MAV94
HY5118260JC
HY5118260SLJC
HY5118260TC
HY5118260SLTC
1AD1S
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