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    BLX 91 Price and Stock

    Carling Technologies TIGB57-6S-BL-NBL-XA

    Rocker Switches SPST ON-NONE-ON
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    Mouser Electronics TIGB57-6S-BL-NBL-XA 145
    • 1 $8.74
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    • 1000 $5.76
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    Carling Technologies TILA55-1S-BLXEV3

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    Mouser Electronics TILA55-1S-BLXEV3 15
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    • 100 $13.17
    • 1000 $11.43
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    Carling Technologies LTIGM61-6S-BL-GN/AM-NBL-XLO1

    Rocker Switches LTIG-Series Tippette DP Illuminate Rocke
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    Mouser Electronics LTIGM61-6S-BL-GN/AM-NBL-XLO1 11
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    Carling Technologies LTIGK01-6S-BL-AM-NBL-XTH1

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    Mouser Electronics LTIGK01-6S-BL-AM-NBL-XTH1 9
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    Carling Technologies LTIGM31-6S-BL-RC-NBL-XCN1

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    Mouser Electronics LTIGM31-6S-BL-RC-NBL-XCN1 9
    • 1 $26.12
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    • 100 $16.8
    • 1000 $15.81
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    BLX 91 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLX91 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BLX91 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLX91 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BLX91 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLX91 Unknown Transistor Replacements Scan PDF
    BLX91 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLX91A Philips Semiconductors UHF Power Transistor Original PDF
    BLX91A Mullard Quick Reference Guide 1977/78 Scan PDF
    BLX91A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BLX91A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BLX91A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BLX91A Unknown Transistor Replacements Scan PDF
    BLX91A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BLX91CB Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF

    BLX 91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and


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    PDF BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22

    G3F diode

    Abstract: No abstract text available
    Text: Laser Diodes Gemini Series - 9x× nm High Brightness Laser Diode BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and


    Original
    PDF BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx G3F diode

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 9x× nm High Power Diode Laser BLD-91-tt-10W-02-F-10-c-l-22 BLD-94-tt-10W-02-F-10-c-l-22 BLD-98-tt-10W-02-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and


    Original
    PDF BLD-91-tt-10W-02-F-10-c-l-22 BLD-94-tt-10W-02-F-10-c-l-22 BLD-98-tt-10W-02-F-10-c-l-22

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and


    Original
    PDF BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 976 nm High Brightness Laser Diode BLD-98-tt-20w-A4-C BLD-98-tt-30w-A4-C High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and superior beam quality. The products are achieved by transforming the asymmetric


    Original
    PDF BLD-98-tt-20w-A4-C BLD-98-tt-30w-A4-C

    K1760

    Abstract: K176TM2 K176KT1 ussr K174TM1 K176HA7 k176 K13G K176TM1 K174
    Text: ». *• /*•/ /' a • ••••’ . . • • ••••• CEPMM ; MHTErPA/lbH blX MMKPOCXEM • INTEGRATED MICROCIRCUITS FAMILIES . . *• '' ^ ï | -, M . K176 K590 M O n -M HTerpanbHbie MMKpocxeMbi M O S -In te g ra te d M ic ro c irc u its MnHjx>cxcvn.i cepmi K176 np<*/j»cs:«H;mciiu' j\nn


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    PDF 38max 59max K1760 K176TM2 K176KT1 ussr K174TM1 K176HA7 k176 K13G K176TM1 K174

    K176KT1

    Abstract: k176 USSR K176TM2 K174HA7 K176HA7 K176NE6 K176PM1 K176 ussr modulo 10 counter
    Text: ». *• /*•/ /' a • ••••’ . . • • ••••• CEPMM ; MHTErPA/lbH blX MMKPOCXEM • INTEGRATED MICROCIRCUITS FAMILIES . . *• '' ^ ï | -, M . K176 K590 M O n -M HTerpanbHbie MMKpocxeMbi M O S -In te g ra te d M ic ro c irc u its MnHjx>cxcvn.i cepmi K176 np<*/j»cs:«H;mciiu' j\nn


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    PDF 15amax 38max 59max K176KT1 k176 USSR K176TM2 K174HA7 K176HA7 K176NE6 K176PM1 K176 ussr modulo 10 counter

    BDY39

    Abstract: Scans-0078762 B-30 B-31 solitron devices blx BLX83 BD 104 NPN 185BD BDY38
    Text: - ^ o —— • _ _ SOLITROIM DEVICES INC [ ^ G W © ? © Ä 1T M TS dF | ä H b öb D S 0D D S7fib D | ^ T ’ J 3 ' û i . © 1


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    BD NPN transistors

    Abstract: pro-electron BLX83 Scans-00147652 BD130
    Text: r e » ? ©ättä[l® P R O -E L E C T R O INI P O W E R T R A N S IS T O R S DEVICE POLARITY TYPE IC(cont. MAX AMPS ic Devices. Inc. VCEO MAX VOLTS JiFE @ MIN/MAX VCE(sat)@ MAX/VOLTS ic AMPS It MIN(MHz) Px MAX. WATTS CA SE TYPE CHIP TYPE BD 130 BD 142


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    Untitled

    Abstract: No abstract text available
    Text: ^3natron P R O -E L E C T R O N P O W E R T R A N S IS T O R S DEVICE POLARITY IC cont. vCEO MAX AMPS MAX VOLTS TYPE BD 130 NPN 15.0 60 BD 142 NPN 15.0 45 BDY 20 NPN 1S.0 60 BDY 29 NPN 30.0 75 BDY 37 NPN 140 16.0 BDY 38 NPN 6.0 40 BDY 39 NPN 15.0 60 BDY 55 NPN


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    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


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    PDF BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


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    PDF BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92

    BLW20

    Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
    Text: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V


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    PDF BLW20 32-UNC-2A-Thread O-117 T0-60CE S0-104 SO-104 BLW20 TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


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    PDF BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


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    PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63

    BLW25

    Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
    Text: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V


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    PDF BLW25 O-145 toxi175 O-117 T0-60CE S0-104 SO-104 BLW25 bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


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    PDF BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88

    BFW 11 oa

    Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
    Text: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1


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    PDF BLW18 VCB-13V, O-117 T0-60CE S0-104 SO-104 BFW 11 oa bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53

    BLW16

    Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
    Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V


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    PDF BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11

    TRANSISTOR BFW 11

    Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
    Text: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C


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    PDF BLW13 O-117 T0-60CE S0-104 SO-104 TRANSISTOR BFW 11 BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    BLW 12v

    Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
    Text: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V


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    PDF BLW17 BLW 12v TO-131 Package BLY85 BLW11 BLY53 bly53a BLY 67 BLY60 BLX67

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    BLY 33 transistor

    Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
    Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .


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    PDF BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor