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    BLS2731 Search Results

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    BLS2731 Price and Stock

    Ampleon BLS2731-20,114

    RF TRANS NPN 75V 3.1GHZ CDFM2
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    Ampleon BLS2731-50,114

    RF TRANS NPN 75V 3.1GHZ CDFM2
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    NXP Semiconductors BLS2731-10,114

    RF TRANS NPN 75V 3.1GHZ CDFM2
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    Ampleon BLS2731-110,114

    RF TRANS NPN 75V 3.1GHZ CDFM2
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    BLS2731 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLS2731 Philips Semiconductors Microwave power transistor Original PDF
    BLS2731-10 Philips Semiconductors Microwave Power Transistor Original PDF
    BLS2731-10,114 Philips Semiconductors RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT445C Original PDF
    BLS2731-10 TRAY NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 2700 - 3100 MHz; Load power: 12.5 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us Original PDF
    BLS2731-110 Philips Semiconductors Microwave Power Transistor Original PDF
    BLS2731-110 Philips Semiconductors Microwave power transistor Original PDF
    BLS2731-110,114 NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us; Package: SOT423A (CDFM2); Container: Blister pack Original PDF
    BLS2731110T Philips Semiconductors TRANS GP BJT NPN 75V 3SOT-423A Original PDF
    BLS2731-110TRAY Philips Semiconductors TRANS GP BJT NPN 75V 3SOT-423A TRAY Original PDF
    BLS2731-150 Philips Semiconductors Microwave Power Transistor Original PDF
    BLS2731-20 Philips Semiconductors Microwave Power Transistor Original PDF
    BLS2731-20,114 NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us; Package: SOT445C (CDFM2); Container: Blister pack Original PDF
    BLS2731-20 TRAY NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us Original PDF
    BLS2731-50 Philips Semiconductors Microwave Power Transistor Original PDF
    BLS2731-50,114 NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us; Package: SOT422A (CDFM2); Container: Blister pack Original PDF
    BLS2731-50 TRAY NXP Semiconductors Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us Original PDF

    BLS2731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    Abstract: BLS2731-110 CERAMIC CAPACITOR SMD PHILIPS TRANSISTOR SMD w2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D260 BLS2731-110 Microwave power transistor Product specification Supersedes data of 1998 Jan 30 2001 Dec 05 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 FEATURES PINNING - SOT423A


    Original     		PDF M3D260 BLS2731-110 OT423A SCA73 613524/05/pp12 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ BLS2731-110 CERAMIC CAPACITOR SMD PHILIPS TRANSISTOR SMD w2

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-20 Microwave power transistor Preliminary specification Supersedes data of 1997 Jan 22 File under Discrete Semiconductors, SC15 1997 Nov 05 Philips Semiconductors Preliminary specification Microwave power transistor


    Original     		PDF BLS2731-20 SCA55 127147/00/02/pp8

    philips catalog resistors

    Abstract: resistors philips catalog catalog transistor Silicon Epitaxial Planar Transistor philips "Philips Semiconductors" Catalog
    Text: Philips Semiconductors: Product information on BLS2731-110, Microwave power transistor Go to Philips Semiconductors' home page Catalog & Datasheets Product INFOrmation page Catalog by Function Catalog by System Cross reference Models Packages Application notes


    Original     		PDF BLS2731-110, BLS2731-110; OT423A OT423A BLS2731-110 images/bls2731-110 philips catalog resistors resistors philips catalog catalog transistor Silicon Epitaxial Planar Transistor philips "Philips Semiconductors" Catalog

    BLS2731-10

    Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-10 OT445C SCA60 125108/00/04/pp12 BLS2731-10 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    transistor SMD DK rc

    Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications


    Original     		PDF BLS2731-110 OT423A SCA57 125108/00/04/pp12 transistor SMD DK rc transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342

    BLS2731-50

    Abstract: atc 700a
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 PINNING - SOT422A FEATURES • Suitable for short and medium pulse applications


    Original     		PDF BLS2731-50 OT422A SCA57 125108/00/03/pp8 BLS2731-50 atc 700a

    BLS2731-20

    Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-20 OT445C SCA60 125108/00/04/pp8 BLS2731-20 RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    BLF4G08LS-160A

    Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
    Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"


    Original     		PDF 31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS


    Original     		PDF IEDM2006,

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    TSTD

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731-20 FEATURES PINNING • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION 1 • Emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF OT445A) TSTD

    BH Rf transistor

    Abstract: BLS2731-50
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -50 PINNING SOT422A FEATURES • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF OT422A) BH Rf transistor BLS2731-50

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -150 FEATURES PINNING - SOT469A • Matched internally to 50 Q PIN • Suitable for short and medium and long pulse applications DESCRIPTION 1 collector emitter .« A # • Internal input and output matching networks for an easy


    OCR Scan     		PDF BLS2731 OT469A

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Preliminary specification Microwave power transistor BLS2731-150 PINNING - SOT469A FE A T U R E S • M atched internally to 50 £2 PIN DESCRIPTION • Su itab le for short, m edium and long pu lse app licatio ns 1 co llecto r • Internal input and output m atching netw orks for an e a s y


    OCR Scan     		PDF BLS2731-150 OT469A T469A

    Untitled

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BLS2731 SC19a BLS2731-20 OT445C i25io8/oo/o3/P

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 >10 FEATURES PINNING • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF BLS2731

    SOT423

    Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
    Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION


    OCR Scan     		PDF BLS2731 OT423A SOT423 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    BLS2731-10

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -10 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BLS2731 SC19a BLS2731-10 OT445C 125108/00/03/pp12 BLS2731-10

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan     		PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S