Untitled
Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced
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300oC,
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Untitled
Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Abstract: No abstract text available
Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have
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01AC09
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
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blonk
Abstract: No abstract text available
Text: LTR G1 Tetlschniff : C - REVISION RECORD DATE REVISED PER ECO-11-005294 13APR11 Name HMR C 4, 65 t& 5 Schnitt : A ' A Schnitt : B - B , WftR f i f i - 9094-2 < 3 ,9 TI "öl Drahtgröfienbereich : 0,5 r 1,0 mm1 L e itu n g s q u e rs c h n itt in m m 2 CROSS-SECTION IN mm*
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ECO-11-005294
13APR11
blonk
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AR95X
Abstract: AZA MARKING CODE AR35 MARKING ALF A-R marking
Text: S TAÏWAN AR35 SERIES SEMICONDUCTOR 35.0 AMPS. High Current Button Rectifiers RoHS COMPLIANCE AR Features P la s lic m a te r ia l u s e d c a r r ie s U n C e rw ritB rs I M o ra to ry C lassification 94V-0 l o w cost construction u tilising void-free molded
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MIL-STD-202.
11PWll"
AR95X
AZA MARKING CODE
AR35
MARKING ALF
A-R marking
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SN7401
Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
Text: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S
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54H/74H,
4L/74L.
Chiana56
SN7401
SN7449
vogt IL 050 321 31 01
VOGT 406 69
74L95
SN74L00
TME 87
SN6407
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TDK Power Supply MRW
Abstract: K-Line L line tda9151 TDA9151B
Text: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification
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TDA9151B
16-bit
7110flEb
G7fi21ci
TDK Power Supply MRW
K-Line L line
tda9151
TDA9151B
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Untitled
Abstract: No abstract text available
Text: m > CD CD O —I 5 g $ rm K to O > _ 73 $£ 5 è T3 OJ Ji > w » 1 £ MICRO-CHANGE ’8 0 ’ SERIES M ALE/M ALE PORTABLE CONNECTOR LEAD o H (-H <J M YE LLO W COMPOUND 3 If O P IN 5 f H PIN 2 -CABLE 1 PIN 4 PIN 5 3, 4 OR 5 CORE O Z " ° =r 33Ï -HO I/) _ ~0
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SN7441
Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
Text: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS
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54H/74H
54L/74L
SN7441
74L78
Sw 7441Aj
SN7401
SN7449
7475n itt
u6a9601
N8490
National Semiconductor Linear Data Book
c2003p
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Untitled
Abstract: No abstract text available
Text: Preliminary specification Philips Sem iconductors Programmable deflection controller TDA9151B FE A T U R E S G en eral U • 6.75, 13.5 an d 27 M H z c lo c k fre q u e n c y II m ! BUS] • Few e xte rn a l c o m p o n e n ts • S y n c h ro n o u s logic
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TDA9151B
16-bit
9151B
MMA72A
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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A101
Abstract: No abstract text available
Text: 3114 Series □upnn 2.0m m Flex Shroud Header Material: Housing: High Temperature Plastic UL94V-0. Contacts: Brass. Electrical Characteristics: Current Rating:2 AMP. Dielectric Withstanding VoltageAC 1000V For 1 minute. Insulator Resistance: 1000MQmin. at DC 500V.
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UL94V-0.
30mQmax.
100mA.
A101
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SECAM Encoders
Abstract: 1470 LM TDA4510 TDA8501 nf03 SDIP32 TDA8505 UKA460 MKM73-1
Text: INTEGRATED CIRCUITS % S H IE T TDA8505 SECAM encoder Preliminary specification Supersedes data of May 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS • I 7110fl2b 007M533 A3? PHILIPS Philips Semiconductors Preliminary specification
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TDA8505
7110fl2b
007M533
SECAM Encoders
1470 LM
TDA4510
TDA8501
nf03
SDIP32
TDA8505
UKA460
MKM73-1
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UKA720
Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller
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TDA9150B
711002b
16-bit
7110fl2b
UKA720
TV horizontal Deflection Systems
zener diode 12c
TDA9150B
UKA716
pulse amplitude modulation using 555
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CEC4L-03C
Abstract: 125L 302G 303G 304G 307G FR301G FR307G
Text: E FR301G - FR307G TAIW AN SEMICONDUCTOR 3.0 A M PS . G lass Passivated Fast Recovery R ectifiers RoHS DQ-201AD C O M P L IA N C E -T J - 1.0 :25.1 :- .TùTWt MIN. Features ❖ r_ l G lass passivated chip junction. High efficiency. Low VF <• High c u rre n t c a p a b ility
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FR301G
FR307G
DQ-201AD
MIL-5TD-202,
CEC4L-03C
125L
302G
303G
304G
307G
FR307G
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