Untitled
Abstract: No abstract text available
Text: TB31372FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31372FNG Single Chip Receiver IC The TB31372FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31372FNG
TB31372FNG,
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TB31373
Abstract: TB31373FNG TB3137 remote control for home appliances multi output PLL 2400 MHZ rx 434 rf receiver ask 9600 toshiba pll am-fm
Text: TB31373FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31373FNG Single Chip Receiver IC The TB31373FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31373FNG
TB31373FNG,
24-pin
TB31373
TB31373FNG
TB3137
remote control for home appliances multi output
PLL 2400 MHZ
rx 434 rf receiver ask 9600
toshiba pll am-fm
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PDF
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Untitled
Abstract: No abstract text available
Text: TB31373FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31373FNG Single Chip Receiver IC The TB31373FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31373FNG
TB31373FNG,
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TB3137
Abstract: TB31372 TB31372FNG
Text: TB31372FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31372FNG Single Chip Receiver IC The TB31372FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31372FNG
TB31372FNG,
TB3137
TB31372
TB31372FNG
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Untitled
Abstract: No abstract text available
Text: TB31373FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31373FNG Single Chip Receiver IC The TB31373FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31373FNG
TB31373FNG,
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FCX-03
Abstract: TB31372FNG TB31372 TB3137 DSX530GK
Text: TB31372FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31372FNG Single Chip Receiver IC The TB31372FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31372FNG
TB31372FNG,
FCX-03
TB31372FNG
TB31372
TB3137
DSX530GK
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PDF
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TB31373FNG
Abstract: FCX-03 TB31373 RF transmitter and receiver 433.9
Text: TB31373FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31373FNG Single Chip Receiver IC The TB31373FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31373FNG
TB31373FNG,
TB31373FNG
FCX-03
TB31373
RF transmitter and receiver 433.9
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PDF
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TB31372
Abstract: TB31372FNG TB3137 SAFDC315 FCX-03 SAFDC315MS 40659 SAFDC DSX530GK toshiba pll am-fm
Text: TB31372FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB31372FNG Single Chip Receiver IC The TB31372FNG, which realizes a reception block on a single chip, can greatly reduce the number of components comprising must functions i.e. RF block, IF block, VCO block, PLL block ,
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TB31372FNG
TB31372FNG,
TB31372
TB31372FNG
TB3137
SAFDC315
FCX-03
SAFDC315MS
40659
SAFDC
DSX530GK
toshiba pll am-fm
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b982
Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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28F008SA
64-Kbyte
X28F008SA-120
AP-359
AP-360
25F008SA
AP-364
b982
b1676
b896
SP 1191
B1328
B3045
FLASH TRANSLATION LAYER FTL
5498 transistor
X28F008SA-120
b3305
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china pll 5v tuner
Abstract: Tuner I2C UHF/VHF booster circuit diagram UHF VHF BOOSTER dvb-t tv splitter circuit uhf tv tuner module video out voltage controlled tv tuner pll 5v tuner DVB-T modulator if amplifier with agc
Text: RT BLOCK RT BLOCK • INTRODUCTION The RT Block means a single conversion digital tuner with RF remodulator for receiving the DVB-T or DVB-C broadcasting. The tuner is optionally composed of the single conversion tuner, and the IF amplifier with AGC circuit in one module.
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15KHz
45KHz
75KHz
china pll 5v tuner
Tuner I2C
UHF/VHF booster circuit diagram
UHF VHF BOOSTER
dvb-t tv splitter circuit
uhf tv tuner module video out
voltage controlled tv tuner
pll 5v tuner
DVB-T modulator
if amplifier with agc
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Untitled
Abstract: No abstract text available
Text: 856882 358.4 MHz SAW Filter Applications General Purpose Wireless Wireless Infrastructure 3G, 4G, Multistandard Functional Block Diagram Bal/Bal Functional Block Diagram Bal/SE Top view Top view Gnd Gnd Gnd Gnd Gnd Gnd 9 8 9 7 Input + 10 6 Output - Gnd 11
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panasonic MSL level
Abstract: ECUV1H390 murata SAW
Text: 856882 358.4 MHz SAW Filter Applications General Purpose Wireless Wireless Infrastructure 3G, 4G, Multistandard Functional Block Diagram Bal/Bal Functional Block Diagram Bal/SE Top view Top view Gnd Gnd Gnd Gnd Gnd Gnd 9 8 9 7 Input + 10 6 Output - Gnd 11
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vhdl code for deserializer
Abstract: circuit diagram of ddr ram vhdl code for parallel to serial converter RAMB16 design ideas XAPP690 AAA0000 AAA0100 AAA1000 XAPP224
Text: Application Note: Virtex-II, Virtex-II Pro, Spartan-3 Families Using Block SelectRAM Memories as Serializers or Deserializers R XAPP690 v1.0 October 6, 2003 Author: Marc Defossez, Nick Sawyer Summary This application note describes how block memories efficiently can implement a serializer or a
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XAPP690
XAPP224,
XAPP225)
vhdl code for deserializer
circuit diagram of ddr ram
vhdl code for parallel to serial converter
RAMB16
design ideas
XAPP690
AAA0000
AAA0100
AAA1000
XAPP224
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Untitled
Abstract: No abstract text available
Text: 856687 456 MHz SAW Filter Applications General purpose wireless Wireless infrastructure 3G, 4G, Multistandard Functional Block Diagram Bal/SE Functional Block Diagram Bal/Bal Top view Gnd Gnd Gnd 9 8 Gnd Gnd Gnd 7 9 8 7 Input + 10 6 Gnd Input + 10 6 Output -
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Untitled
Abstract: No abstract text available
Text: 856731 192 MHz SAW Filter Applications General Purpose Wireless Wireless Infrastructure 3G, 4G, Multistandard Functional Block Diagram SE/Bal Functional Block Diagram SE/SE Top view Top view Gnd Gnd Gnd Gnd Gnd Gnd 9 8 9 7 Input 10 6 Output - Gnd 11 5 Gnd
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Untitled
Abstract: No abstract text available
Text: 856691 140 MHz SAW Filter Applications Wireless infrastructure Microwave communications IF filtering General purpose IF Functional Block Diagram SE/SE Functional Block Diagram Bal/SE Top View Top view Gnd Gnd Gnd 8 7 6 Input 9 5 Gnd 10 4 1 Gnd 2 3 Gnd Gnd
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Untitled
Abstract: No abstract text available
Text: 856691 140 MHz SAW Filter Applications Wireless infrastructure Microwave communications IF filtering General purpose IF Functional Block Diagram SE/SE Functional Block Diagram Bal/SE Top View Top view Gnd Gnd Gnd 8 7 6 Input 9 5 Gnd 10 4 1 Gnd 2 3 Gnd Gnd
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dual port fifo design code
Abstract: No abstract text available
Text: Application Note: Virtex-II Series R Self-Addressing FIFO Author: Nick Sawyer XAPP291 v1.1 February 27, 2002 Summary The block memories in the Virtex -II architecture are capable of supporting data bus widths of up to 36-bits. A self-addressing FIFO reference design uses these block memories to store
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XAPP291
36-bits.
dual port fifo design code
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vhdl code for asynchronous fifo
Abstract: XAPP291 dual port fifo design code vhdl code for a grey-code counter
Text: Application Note: Virtex-II Series R Self-Addressing FIFO Author: Nick Sawyer XAPP291 v1.0 November 2, 2001 Summary The block memories in the Virtex -II architecture are capable of supporting data bus widths of up to 36-bits. A self-addressing FIFO reference design uses these block memories to store
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XAPP291
36-bits.
vhdl code for asynchronous fifo
XAPP291
dual port fifo design code
vhdl code for a grey-code counter
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schematics for a PA amplifier
Abstract: TQM613025 design of multi section directional coupler TQM613026 qualcomm rft
Text: TQM613026 Application Note Application Note for TQM613026 Power Amplifier-Duplexer Product TQM613026 TABLE OF CONTENTS • 1.0 Description • 2.0 Product Block Diagram and Operation • 3.0 Recommended Handset Schematic and Layout Considerations • 3.1 DC Block Recommendations
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TQM613026
TQM613026
schematics for a PA amplifier
TQM613025
design of multi section directional coupler
qualcomm rft
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MT29F2G08ABAEA
Abstract: MT29F2G08ABAEAWP MT29F2G08ABAEAH4 MT29F2G08aba MT29F2G16ABAEAWP MT29F2G16ABAEA MT29F2G08ABAE MT29F2G16ABBEAH4 MT29F2G08ABBEAH4 MT29F2G16ABA
Text: Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4 MT29F2G08ABBEAHC, MT29F2G16ABAEAWP, MT29F2G16ABBEAH4 MT29F2G16ABBEAHC • First block block address 00h is valid when shipped from factory with ECC. For minimum required
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MT29F2G08ABAEAH4,
MT29F2G08ABAEAWP,
MT29F2G08ABBEAH4
MT29F2G08ABBEAHC,
MT29F2G16ABAEAWP,
MT29F2G16ABBEAH4
MT29F2G16ABBEAHC
09005aef83b83f42
MT29F2G08ABAEA
MT29F2G08ABAEAWP
MT29F2G08ABAEAH4
MT29F2G08aba
MT29F2G16ABAEAWP
MT29F2G16ABAEA
MT29F2G08ABAE
MT29F2G16ABA
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MT29F2G08ABAEAWP
Abstract: mt29F2G08ABAEA MT29F2G16ABAEAWP MT29F2G08aba 2GB Nand M69A
Text: Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4 MT29F2G08ABBEAHC, MT29F2G16ABAEAWP, MT29F2G16ABBEAH4 MT29F2G16ABBEAHC • First block block address 00h is valid when shipped from factory with ECC. For minimum required
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MT29F2G08ABAEAH4,
MT29F2G08ABAEAWP,
MT29F2G08ABBEAH4
MT29F2G08ABBEAHC,
MT29F2G16ABAEAWP,
MT29F2G16ABBEAH4
MT29F2G16ABBEAHC
09005aef83b83f42
MT29F2G08ABAEAWP
mt29F2G08ABAEA
MT29F2G16ABAEAWP
MT29F2G08aba
2GB Nand M69A
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ER-27
Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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OCR Scan
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28F008SA
64-Kbyte
F008S
120ns
AP-359,
AP-360,
25F008SA
AP-364,
ER-27
5498 transistor
Intel Corporation esd testing flash memory
SmartDie
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Untitled
Abstract: No abstract text available
Text: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase
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OCR Scan
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28F008SA
64-Kbyte
X28F008SA-120
AP-359,
AP-360,
25F008SA
AP-364
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PDF
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