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    BLF6G22LS-75 Price and Stock

    Ampleon BLF6G22LS-75,112

    BLF6G22LS-75 - LDMOS RF Power Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BLF6G22LS-75,112 34 1
    • 1 $60
    • 10 $60
    • 100 $56.4
    • 1000 $51
    • 10000 $51
    		Buy Now

    BLF6G22LS-75 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G22LS-75 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G22LS-75 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G22LS-75,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.7DB SOT502B Original PDF
    BLF6G22LS-75,118 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.7DB SOT502B Original PDF
    BLF6G22LS-75,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLF6G22LS-75,112 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLF6G22LS-75,118 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" Original PDF
    BLF6G22LS-75,118 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF