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    BLF6G20-110 Price and Stock

    Ampleon BLF6G20-110,112

    RF MOSFET LDMOS 28V SOT502A
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    BLF6G20-110 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G20-110
    		NXP Semiconductors Power LDMOS transistor Original PDF
    BLF6G20-110
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB Original PDF
    BLF6G20-110,112
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack Original PDF