BLB101SYC-12V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-12V-P PRELIMINARY SPEC Super Bright Yellow Features Description z BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Super Bright Yellow device is made with InGaAlP on APPLICATION OF DIFFERENT ACROSS CURRENT.
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BLB101SYC-12V-P
DSAA8839
AUG/23/2007
BLB101SYC-12V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMPS BLB101SURC-E-x-P HYPER RED BLB101MGC-x-P MEGA GREEN BLB101SYC-x-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. !LONG LIFE. !LOW CURRENT, POWER SAVINGS.
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BLB101SURC-E-x-P
BLB101MGC-x-P
BLB101SYC-x-P
KDA0455
SEP/22/2001
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-28V-P Super Bright Yellow Features Description z Built-in current limiting resistor for direct application of The Super Bright Yellow device is made with AlGaInP on different across current. GaAs substrate light emitting diode chip.
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BLB101SYC-28V-P
DSAA8840
JAN/07/2011
BLB101SYC-28V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-6V-P Super Bright Yellow Description Features Built-in current limiting resistor for direct application of The Super Bright Yellow device is made with AlGaInP on GaAs substrate light emitting diode chip.
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BLB101SYC-6V-P
DSAA6597
DEC/30/2010
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-28V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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BLB101SYC-28V-P
DSAB3177
MAY/21/2002
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BLB101SYC-12V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-12V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. !LONG LIFE. !LOW CURRENT, POWER SAVINGS. Super Bright Yellow source color devices are made
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BLB101SYC-12V-P
DSAA8839
FEB/28/2003
BLB101SYC-12V-P
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BLB101SYC-28V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-28V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT Super Bright Yellow source color devices are made APPLICATION OF DIFFERENT ACROSS CURRENT. !LONG LIFE. with DH InGaAlP on GaAs substrate Light Emitting
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BLB101SYC-28V-P
DSAB3177
APR/15/2003
BLB101SYC-28V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-6V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT Super Bright Yellow source color devices are made with APPLICATION OF DIFFERENT ACROSS CURRENT. DH InGaAlP on GaAs substrate Light Emitting Diode.
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BLB101SYC-6V-P
DSAA6597
FEB/28/2003
BLB101SYC-6V-P
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BLB101SYC-28V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-28V-P PRELIMINARY SPEC Super Bright Yellow Features Description z BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Super Bright Yellow device is made with InGaAlP on APPLICATION OF DIFFERENT ACROSS CURRENT.
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Original
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BLB101SYC-28V-P
DSAA8840
AUG/23/2007
BLB101SYC-28V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-12V-P Super Bright Yellow Description Features Built-in current limiting resistor for direct application of The Super Bright Yellow device is made with AlGaInP on GaAs substrate light emitting diode chip.
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BLB101SYC-12V-P
DSAA8839t
DSAA8839
DEC/30/2010
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BLB101SYC-12V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-12V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT Super Bright Yellow source color devices are made APPLICATION OF DIFFERENT ACROSS CURRENT. !LONG LIFE. with DH InGaAlP on GaAs substrate Light Emitting
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BLB101SYC-12V-P
DSAB3176
APR/15/2003
BLB101SYC-12V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-28V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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BLB101SYC-28V-P
DSAA8840
FEB/28/2003
BLB101SYC-28V-P
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BLB101SYC-6V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-6V-P PRELIMINARY SPEC Super Bright Yellow Features Description z BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Super Bright Yellow device is made with InGaAlP on APPLICATION OF DIFFERENT ACROSS CURRENT.
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Original
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BLB101SYC-6V-P
DSAA6597
AUG/22/2007
BLB101SYC-6V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP Part Number: BLB101SYC-28V-P Super Bright Yellow Description Features Built-in current limiting resistor for direct application of The Super Bright Yellow device is made with AlGaInP on GaAs substrate light emitting diode chip.
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BLB101SYC-28V-P
DSAA884t
DSAA8840
JAN/07/2011
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BLB101SYC-6V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-6V-P SUPER BRIGHT YELLOW Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate light emitting diode chip. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Super Bright Yellow device is made with DH
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BLB101SYC-6V-P
DSAA6597
FEB/22/2005
BLB101SYC-6V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-12V-P SUPER BRIGHT YELLOW Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate light emitting diode chip. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Super Bright Yellow device is made with DH
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BLB101SYC-12V-P
DSAA8839
FEB/22/2005
BLB101SYC-12V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-6V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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BLB101SYC-6V-P
DSAB3175
MAY/21/2002
BLB101SYC-6V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-28V-P SUPER BRIGHT YELLOW Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate light emitting diode chip. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Super Bright Yellow device is made with DH
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BLB101SYC-28V-P
DSAA8840
FEB/22/2005
BLB101SYC-28V-P
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Untitled
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-12V-P Features SUPER BRIGHT YELLOW Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.
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BLB101SYC-12V-P
DSAB3176
MAY/21/2002
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BLB101SYC-6V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB101SYC-6V-P SUPER BRIGHT YELLOW Features Description !BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT Super Bright Yellow source color devices are made APPLICATION OF DIFFERENT ACROSS CURRENT. !LONG LIFE. with DH InGaAlP on GaAs substrate Light Emitting
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BLB101SYC-6V-P
DSAB3175
APR/15/2003
BLB101SYC-6V-P
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Untitled
Abstract: No abstract text available
Text: P2 SIDE VIEW P3 CLUSTER P4-5 BASED LED LAMPS SIDE VIEW KA-9219/2 Part No. KA-1114/2-CC-L5 Material λD nm Lens Type Iv (mcd) @20mA Min. Typ. View ing Angle Dimension 2θ θ 1/2 9.2mm x 1.9mm KA-9219/2EC GaAsP/GaP 625 water clear 18 50 100° KA-9219/2SRC
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KA-9219/2
KA-1114/2-CC-L5
KA-9219/2EC
KA-9219/2SRC
KA-9219/2YC
KA-9219/2SGC
KA-1114/2EC-CC-L5
KA-1114/2YC-CC-L5
KA-1114/2SYC-CC-L5
KA-1114A054SYCK-12V-P
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BLB102SYC-24V-P
Abstract: No abstract text available
Text: BASED LED LAMPS BLF052-6V-P Part No. BLB101-6V-P Emitting Color + Material Wavelength nm BLB102-6V-P Lens Type Iv (mcd) V=6V V=12V, V=24 Min. Typ. 2θ1/2 InGaAlP 640 water clear 1000 2000 45° BLF052SURC-E-12V-P InGaAlP 640 water clear 1000 2000 45° BLF052SURC-E-24V-P
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BLF052-6V-P
BLB101-6V-P
BLB102-6V-P
BLS101-6V-P
BLF052SURC-E-6V-P
BLF052SURC-E-12V-P
BLF052SURC-E-24V-P
BLF052MGC-6V-P
BLF052MGC-12V-P
BLF052MGC-24V-P
BLB102SYC-24V-P
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diode sy 160
Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Text: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.
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BLB101
BLB101-V
MAR/01/2001
diode sy 160
diode sy
Ic mega 16
BLB101SYC-12V-P
BLB101SYC-24V-P
BLB101SYC-6V-P
BLB101MGC-12V-P
BLB101MGC-24V-P
BLB101MGC-6V-P
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diode sy 200
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMPS l/ : ^ ^ K KingDrignt ir w ir n + BLB101 SERIES Features Package Dimensions I BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT, i LONGLIFE. i LOW CURRENT, POWERSAVINGS. i LOW MAINTENANCE, i DIFFERENTCOLORAVAILABLE.
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BLB101
2-BLB101-2
diode sy 200
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