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    BL 409 Search Results

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    BL 409 Price and Stock

    Abracon Corporation ABL-4.096MHZ-B4Y

    CRYSTAL 4.0960MHZ 18PF T/H
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    DigiKey ABL-4.096MHZ-B4Y Bulk 1,000
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    Avnet Americas ABL-4.096MHZ-B4Y Bulk 10 Weeks 1,000
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    Abracon Corporation ABL-4.096MHZ-B4Y-T

    CRYSTAL 4.0960MHZ 18PF TH
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    DigiKey ABL-4.096MHZ-B4Y-T Reel
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    Avnet Americas ABL-4.096MHZ-B4Y-T Reel 1,000
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    Mouser Electronics ABL-4.096MHZ-B4Y-T
    • 1 $0.32
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    • 100 $0.212
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    RS ABL-4.096MHZ-B4Y-T Bulk 1,000
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    Citizen Finedevice Co Ltd CSX-750VKBL4096000T

    XTAL OSC VCXO 4.0960MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CSX-750VKBL4096000T Reel 2,000
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    Abracon Corporation ABL-4.096MHZ-B2

    Crystal, Microprocessor, 4.096 MHz, Through Hole, 11.5mm x 5mm x 3.5mm, 50 ppm, 18 pF, 20 ppm, ABL - Bulk (Alt: 13J1643)
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    Avnet Americas ABL-4.096MHZ-B2 Bulk 18 Weeks, 1 Days 1
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    ABL-4.096MHZ-B2 Bulk 10 Weeks 1,000
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    Newark ABL-4.096MHZ-B2 Bulk 50 1
    • 1 $0.511
    • 10 $0.37
    • 100 $0.253
    • 1000 $0.194
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    RS ABL-4.096MHZ-B2 Bulk 16 Weeks 1,000
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    Avnet Abacus ABL-4.096MHZ-B2 12 Weeks 1,000
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    Master Electronics ABL-4.096MHZ-B2 2,000
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    New Advantage Corporation ABL-4.096MHZ-B2 6,000 1
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    Abracon Corporation ABL-4.096MHZ-1Q30

    CRYSTAL, uP, TH/2-Pin, HC/49US (AT49), 4.096MHz Bulk - Bulk (Alt: ABL-4.096MHZ-IQ30)
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    Avnet Americas ABL-4.096MHZ-1Q30 Bulk 1,000
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    BL 409 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BL40931 Facon Semiconductor Mouleded Bridge Scan PDF

    BL 409 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


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    DS1250

    Abstract: DS1250BL DS1250YL
    Text: DS1250YL/BL DS1250YL/BL 4096K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Unlimited write cycles


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    DS1250YL/BL 4096K DS1250Y/AB DS1250YL) DS1250BL) 27DS1250 DS1250YL/BL DS1250 DS1250BL DS1250YL PDF

    Untitled

    Abstract: No abstract text available
    Text: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8


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    1250YL/BL DS1250YL/BL 4096K DS1250Y/AB DS1250YL) DS1250BL) 001LS23 DS1250YL7BL DS1250YL/BL 34-PIN PDF

    DS1350BL

    Abstract: DS1350YL
    Text: DS1350YL/BL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power


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    DS1350YL/BL 4096K DS1350Y/AB DS1350 D1350YL/BL DS1350BL DS1350YL PDF

    Untitled

    Abstract: No abstract text available
    Text: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Ais • Data is automatically protected during power loss


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    1250YL/BL DS1250YL/BL 4096K DS1250Y/AB DS1250YL) DS1250BL) 32-pin DS1250TTOperating PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 16163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


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    GM71V 16163B/BL 42pin 400mil 00057S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GM71C16400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C16400B/BL has realized higher density, h ig h e r perfo rm an ce and vario u s functions by utilizing advanced CMOS process


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    GM71C16400B/BL GM7ICI6400B/BL 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The


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    GM71C 16160B/BL 42SOJ GGQ4C544 PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V(S)16160B/BL has realized higher density, higher performance and various functions by utilizing a d v an ced CM OS pr oc e s s t e c hnol ogy. The


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    16160B/BL GM71V PDF

    GH17L

    Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
    Text: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions


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    16403BIBL 16403B/BL 6403B/BL GM71Vl8163B GM71VSl8163BL GH17L cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163 PDF

    L70b

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology.


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    MSM514410B/BL_ 576-Word MSM514410B/BL 1024cycles/16ms, 1024cycles/128ms MSM51441OB/BL 7242M0 L70b PDF

    GM71C18160BJ6

    Abstract: GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6
    Text: @ LG Semicon. Co. LTD. The G M 71C S 18160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)18160B/BL has realized higher density, higher performance and various functions by utilizing a d v a n c e d C M O S p r o c e s s te c h n o lo g y . T h e


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    18160B/BL GM71C 4DE67S7 GM71C18160BJ6 GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6 PDF

    34-PIN

    Abstract: DS1350BL DS1350YL
    Text: DS1350YL/BL DALLAS SEMICONDUCTOR D S 1 35 0Y L /B L 4096K Nonvolatile SRAM with Battery M onitor NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention


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    DS1350YLVBL DS1350YL/BL 4096K DS1350Y/AB DS1350 D1350YL/BL 34-PIN 68-pin DS1350BL DS1350YL PDF

    Untitled

    Abstract: No abstract text available
    Text: 0S1350YUBL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during V c c power


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    0S1350YUBL DS1350YL/BL 4096K DS1350Y/AB DS1350YUBL D1350YL/BL 34-PIN PDF

    34-PIN

    Abstract: DS1250 DS1250BL DS1250BL-100 DS1250YL
    Text: D S 1 2 5 0 Y L /B L DALLAS SEMICONDUCTOR DS1250YL/BL 4096K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss


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    DS1250YLVBL DS1250YL/BL 4096K DS1250Y/AB DS1250YL) DS1250BL) 32-pin 68-pin DS1250 34-PIN DS1250BL DS1250BL-100 DS1250YL PDF

    SDT 1000 thermistor

    Abstract: LV1011 SDT 100 thermistor SDT 20 thermistor L8150 Hall opamp hall sensor fan working hall effect E-L8150 E-L8150TR
    Text: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.


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    L8150 17kHz SDT 1000 thermistor LV1011 SDT 100 thermistor SDT 20 thermistor L8150 Hall opamp hall sensor fan working hall effect E-L8150 E-L8150TR PDF

    Hall opamp

    Abstract: L8150 LV1011 hall sensor 80 L hall sensor fan power transistor motor control working hall effect E-L8150 E-L8150TR SDT 1000 thermistor
    Text: L8150 Brushless motor predriver Feature • Integrated Predriver IC for 3 phase BL motor. ■ Integrated Smooth driving concept with sinusoidal driving waveforms. ■ BCD5 technology 0.6mm. ■ Package: SO28. ■ Three Hall effects, differential input comparators.


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    L8150 17kHz Hall opamp L8150 LV1011 hall sensor 80 L hall sensor fan power transistor motor control working hall effect E-L8150 E-L8150TR SDT 1000 thermistor PDF

    Untitled

    Abstract: No abstract text available
    Text: INCREMENTAL HOLLOW SHAFT ENCODER • Hollow shaft ■ Optical measuring principle ■ Short circuit and overload protection ■ Encoder self test with alarm circuit ■ Protection class IP 64 Model Bl 58-H Bourns Encoders Electrical Characteristics Output.


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    RS-422 PDF

    14 pin DOT MATRIX

    Abstract: LCD 4 X 20 LCD 2LINE lcd 16 pin 15 pin dot matrix lcd 2 x 8 NJU6432 lcd driver 16-character LCD Character Controller
    Text: TCP MOUNTED LCD DRIVER 12. LCD Driver Line-Up Type No. Function NJU6460A 16-character/1-line Dot Matrix LCD Controller Driver NJU6408B NJU6468 NJU6420B NJU6423B/BL/BS NJU6406B NJU6466 NJU6425 NJU6427 NJU6426 NJU6467 NJU6428/29Series NJU6469 NJU6461 NJU6424


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    NJU6460A 16-character/1-line NJU6420B NJU6423B/BL/BS NJU6406B NJU6466 NJU6425 NJU6427 NJU6426 NJU6467 14 pin DOT MATRIX LCD 4 X 20 LCD 2LINE lcd 16 pin 15 pin dot matrix lcd 2 x 8 NJU6432 lcd driver 16-character LCD Character Controller PDF

    TIA-968-A

    Abstract: tx 4290 GR-1089-CORE TISP4290J3BJ TISP4395J3BJ
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4290J3BJ THRU TISP4395J3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge


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    TISP4290J3BJ TISP4395J3BJ GR-1089-CORE TIA-968-A TISP4290J3BJ TISP4350J3BJ TISP4395J3 4350J3BJ TIA-968-A tx 4290 TISP4395J3BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4290J3BJ THRU TISP4395J3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region -Precise and Stable Voltage -Low Voltage Overshoot Under Surge


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    TISP4290J3BJ TISP4395J3BJ GR-1089-CORE TIA-968-A TISP4350J3BJ 4350J3BJ TISP4350J3BJ PDF

    TISP7180F3

    Abstract: TISP7125F3 TISP7240F3 TISP7380F3 7240F3
    Text: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP7125F3 THRU TISP7180F3, TISP7240F3 THRU TISP7380F3 MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP7xxxF3 MV, HV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region


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    TISP7125F3 TISP7180F3, TISP7240F3 TISP7380F3 GR-1089-CORE TISP7180F3 TISP7380F3 7240F3 PDF

    4200H3

    Abstract: TISP4300H3BJ GR-1089-CORE TISP4070H3 TISP4070H3BJ TISP4115H3BJ TISP4125H3BJ TISP4220H3BJ TISP4240H3BJ TISP4350H3BJ
    Text: *R o H V SC AV ER O M A I S IO P L L A N IA BL S N T E TISP4070H3BJ THRU TISP4115H3BJ, TISP4125H3BJ THRU TISP4220H3BJ, TISP4240H3BJ THRU TISP4400H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH3BJ Overvoltage Protector Series TISP4xxxH3BJ Overview


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    TISP4070H3BJ TISP4115H3BJ, TISP4125H3BJ TISP4220H3BJ, TISP4240H3BJ TISP4400H3BJ GR-1089-CORE, UL1950, TISP4350H3BJ 4200H3 TISP4300H3BJ GR-1089-CORE TISP4070H3 TISP4115H3BJ TISP4220H3BJ PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAWING THIS MADE DRAWING IN 4 THIRD ANGL E I S UNPUBLISHED. COPYRIGHT D C RELEASED FOR P U BL I C A TI O N 19 BY AMP INCORPORATED. ALL PROD 19 4092 IN TERNATIO NAL RIGHTS RESERVED. CODE PART NO. 8 6 1 81 4 - 1 861814-2 861814-3 861814-4 861814-5 861814-6


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    21-MAV-Ã /anp16412/Ã PDF