bl 0306
Abstract: PG22
Text: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays – Tin/Lead Termination “B” SIZE PG12 0204 PG22 (0306) PGC2 (0805) Length mm (in.) Width mm (in.) Temp. Char. Working Voltage 0.50 (0.020) 1.00 (0.039) X7S (Z) 6.3 4 (6) (4) 0.76 (0.030)
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bl 0306
Abstract: No abstract text available
Text: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays – Tin/Lead Termination “B” SIZE LG12 0204 Length mm (in.) Width mm (in.) Temp. Char. Working Voltage 0.50 (0.020) 1.00 (0.039) X7S (Z) 6.3 4 (6) (4) Cap (µF) X5R (D) 6.3 4 (6) (4) LG22 (0306)
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Untitled
Abstract: No abstract text available
Text: LGA Low Inductance Capacitors 0204/0306/0805 Land Grid Arrays Land Grid Array LGA capacitors are the latest family of low inductance MLCCs from AVX. These new LGA products are the third low inductance family developed by AVX. The innovative LGA technology sets a new standard for low inductance MLCC performance.
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solLG22
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Untitled
Abstract: No abstract text available
Text: IDC Low Inductance Capacitors RoHS 0306/0612/0508 IDC (InterDigitated Capacitors) GENERAL DESCRIPTION 0612 + + – L – – Style 3 + 0508 0306 TYPICAL IMPEDANCE Impedance (Ohms) 10 MLCC_1206 1 LICC_0612 0.1 IDC_0612 0.01 0.001 1 10 100 1000 Frequency (MHz)
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0M0701-N
Abstract: LICC
Text: 0612/0508/0306 LICC Low Inductance Chip Capacitors GENERAL DESCRIPTION The total inductance of chip capacitor is determined both by its length to width ratio and by the mutual inductance coupling between its electrodes. Thus a 1210 chip size has a lower inductance than a 1206 chip.
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H20-080
0M0701-N
LICC
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TC59LM818DMBI
Abstract: VDDA14
Text: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network
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TC59LM818DMBI-37
288Mbits
304-WORDS
18-BITS
TC59LM818DMBI
VDDA14
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network
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TC59LM818DMBI-37
288Mbits
304-WORDS
18-BITS
TC59LM818DMBI
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMGI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMGI is Network
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TC59LM818DMGI-37
288Mbits
304-WORDS
18-BITS
TC59LM818DMGI
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TC59LM818DMB-33
Abstract: TC59LM818DMB
Text: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network
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TC59LM818DMB-33
288Mbits
304-WORDS
18-BITS
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TC59LM818DMG-33
Abstract: No abstract text available
Text: TC59LM818DMG-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network
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TC59LM818DMG-33
288Mbits
304-WORDS
18-BITS
TC59LM818DMG
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 18-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMBI is organized as 4,194,304-words × 4 banks × 18
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TC59LM818DMBI-37
304-WORDS
18-BITS
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SSTL-18
Abstract: TC59LM818DMB TC59LM818DMB-30
Text: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 18-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMB is organized as 4,194,304-words × 4 banks × 18
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TC59LM818DMB-30
304-WORDS
18-BITS
TC59LM818DMB
SSTL-18
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TC59LM818DMBI
Abstract: No abstract text available
Text: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network
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TC59LM818DMBI-37
288Mbits
304-WORDS
18-BITS
TC59LM818DMBI
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 4,194,304-WORDS x 4 BANKS × 18-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMBI is organized as 4,194,304-words × 4 banks × 18
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TC59LM818DMBI-37
304-WORDS
18-BITS
TC59LM818DMBI
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMG-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network
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TC59LM818DMG-30
288Mbits
304-WORDS
18-BITS
TC59LM818DMG
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Untitled
Abstract: No abstract text available
Text: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network
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TC59LM818DMB-30
288Mbits
304-WORDS
18-BITS
TC59LM818DMB
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TC59LM818DMB
Abstract: TC59LM818DMB-30
Text: TC59LM818DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network
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TC59LM818DMB-30
288Mbits
304-WORDS
18-BITS
TC59LM818DMB
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TC59LM836DKB
Abstract: TC59LM836DKB-33
Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
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TC59LM836DKB-33
288Mbits
152-WORDS
36-BITS
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TC59LM836DKB
Abstract: TC59LM836DKB-30
Text: TC59LM836DKB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
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TC59LM836DKB-30
288Mbits
152-WORDS
36-BITS
TC59LM836DKB
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Untitled
Abstract: No abstract text available
Text: TC59LM836DKB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
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TC59LM836DKB-30
288Mbits
152-WORDS
36-BITS
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unidirectional current controller circuit
Abstract: SSTL-18 TC59LM836DMB-30
Text: TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 2,097,152-WORDS x 4 BANKS × 36-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DMB is organized as 2,097,152-words × 4 banks × 36
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TC59LM836DMB-30
152-WORDS
36-BITS
TC59LM836DMB
unidirectional current controller circuit
SSTL-18
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Untitled
Abstract: No abstract text available
Text: TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DMB is Network
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TC59LM836DMB-30
288Mbits
152-WORDS
36-BITS
TC59LM836DMB
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T2X18
Abstract: No abstract text available
Text: t, 5 10 = CKT S IZ E 0.20 /.008 2X 157. G L A S S F I L L E D P O L Y E S T E R TO UL 9 4 v - 0 . COLOUR • BL A C K , P I N S ■( 0 . 6 5 0 ) / . 0255 SO. BRASS W I R E . P L A T E D AS P E R S H E E T S 2 TO 6. A" D IM ." B 1 ( .0.20 ") / V -0.35 j C K T
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SDA-90122
T2X18
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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