BKA AMPLIFIER Search Results

M58CR064C

Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

VFBGA56

Abstract: A0-A21 CR10 M58WR064 M58WR064B M58WR064T
Contextual Info: M58WR064T M58WR064B 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

AD8616

Abstract: AD5542 AD8615 AD8618 10NV
Contextual Info: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 APPLICATIONS Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification PIN CONFIGURATIONS

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

A0-A21

Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

VFBGA60

Abstract: CR10 M58WR128EB M58WR128ET
Contextual Info: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: J-STD-020B M30W0R7000B1
Contextual Info: M30W0R7000T1 M30W0R7000B1 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

VFBGA60

Abstract: 7FF00
Contextual Info: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

A0-A21

Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
Contextual Info: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: J-STD-020B M58WR128FB VFBGA56
Contextual Info: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

photoconductive 011

Abstract: AD8616 photoconductive diode AD8615 AD8618 RU-14 ad8616armz-reel1 JC-61 photodiode preamplifier
Contextual Info: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 FEATURES current noise. The parts use a patented trimming technique that achieves superior precision without laser trimming. The AD8615/AD8616/AD8618 are fully specified to operate

CR10

Abstract: M58WR032EB M58WR032ET VFBGA56
Contextual Info: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: J-STD-020B M58WR032FB M58WR032FT VFBGA56 JEDEC J-STD-020B
Contextual Info: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

Contextual Info: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are dual/quad, rail-to-rail, input

AD8615

Abstract: photoconductive 011 AD8616 AD8618 RU-14
Contextual Info: Precision 20 MHz CMOS Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 APPLICATIONS Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifier Audio Photodiode amplification PIN CONFIGURATIONS

Contextual Info: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are single/dual/quad, rail-torail, input and output, single-supply amplifiers featuring very

AD8615

Abstract: AD8616 AD8618 RU-14 AD8615AUJZ-R2 BKA amplifier
Contextual Info: Precision, 20 MHz, CMOS, Rail-to-Rail Input/Output Operational Amplifiers AD8615/AD8616/AD8618 Barcode scanners Battery-powered instrumentation Multipole filters Sensors ASIC input or output amplifiers Audio Photodiode amplification GENERAL DESCRIPTION The AD8615/AD8616/AD8618 are single/dual/quad, rail-torail, input and output, single-supply amplifiers featuring very

Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY SUPPLY VOLTAGE – VDDF = 1.65V to 2.2V SRAM 8 Mbit (512K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V

T8686

Abstract: LE520
Contextual Info: M58WR032FT M58WR032FB 32 Mbit 2Mb x16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

CR10

Abstract: M36WT864BF M36WT864TF
Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V

M58WR032QB

Abstract: M58WR032QT VFBGA56 CR10 M58WR016QB M58WR016QT
Contextual Info: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)