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    BJT NPN EPITAXIAL TRANSISTOR OUTPUT INPUT Search Results

    BJT NPN EPITAXIAL TRANSISTOR OUTPUT INPUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    BJT NPN EPITAXIAL TRANSISTOR OUTPUT INPUT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


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    BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference PDF

    POWER BJTs

    Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
    Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor


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    AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time PDF

    TRANSISTORS BJT list

    Abstract: bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803 MAX16803ATE
    Text: 19-0828; Rev 0; 5/07 MAX16803EVKIT+BJT Evaluation Kit+ The MAX16803EVKIT+BJT EV kit demonstrates a high-current LED driver with accurate current control based on the MAX16803 current regulator. This EV kit is capable of supplying regulated LED currents of up to


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    MAX16803EVKIT MAX16803 MAX16803 TRANSISTORS BJT list bjt specifications fairchild power bjt BJT Driver input output bjt npn transistor j3 bjt Power bjt fairchild power bjt datasheet MAX16803ATE PDF

    mosfet d408

    Abstract: schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


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    IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; mosfet d408 schematic diagram welding inverter VUO 36-16N08 7815 CT 7815 regulator resonant half bridge schematic zcs h-bridge zcs 7815 15Vdc regulator 7915 regulator pin configuration igbt gate driver circuit schematic hcpl-3120 PDF

    IXAN0013

    Abstract: 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter
    Text: APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS AND ZCS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There are many applications which require pulse power. The needed burst of energy is derived by rapidly discharging a previously charged


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    IXAN0013 25VDC 35VDC 110VAC IXDD408 IXDD414 IXLF19N250A 15VDC D-68623; IXAN0013 0013 mosfet d408 REGULATOR IC 7815 ic 7815 pin diagram IC 7815 7915 IXEL40N400 transistor 7815 15-0-15 transformer schematic diagram welding inverter PDF

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


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    MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor PDF

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


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    AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion PDF

    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


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    AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion PDF

    D45 TRANSISTOR

    Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual
    Text: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power


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    PDF

    BC107BP

    Abstract: TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN
    Text: MEETING TRANSIENT SPECIFICATIONS FOR ELECTRICAL SYSTEMS IN MILITARY VEHICLES By Arthur Jordan Sr. Applications Engineer, Vicor Electrical systems in military vehicles are normally required to meet stringent transient requirements. Typical of these specifications are MIL-STD-1275B in the U.S.A. and DEF-STAN


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    MIL-STD-1275B MIL-STD-461E ED-31 BC107BP TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN PDF

    TL431 SOT323

    Abstract: No abstract text available
    Text: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


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    AN11045 TL431 SOT323 PDF

    74xx76

    Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
    Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters


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    71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32 PDF

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h PDF

    MITSUBISHI CM300

    Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    20kHz MITSUBISHI CM300 MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt PDF

    ferrite n67

    Abstract: PC817 example circuits TSM103 L6590D L6590A crt tv flyback transformer pin connections cxb 100 transformer N67 ferrite offline switcher SMD optocoupler IC PC817
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


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    AN1261 L6590 ferrite n67 PC817 example circuits TSM103 L6590D L6590A crt tv flyback transformer pin connections cxb 100 transformer N67 ferrite offline switcher SMD optocoupler IC PC817 PDF

    optocoupler PC817

    Abstract: TSM103 L6590D L6590A offline switcher L6590 1N4148 SMD PACKAGE AWG23 bc337 SMD PACKAGE 1N4148
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


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    AN1261 L6590 optocoupler PC817 TSM103 L6590D L6590A offline switcher 1N4148 SMD PACKAGE AWG23 bc337 SMD PACKAGE 1N4148 PDF

    optocoupler PC817

    Abstract: L6590D L6590A Diode 1N4005 silicon offline switcher china tv circuit diagram L6590 AWG23 ferrite n67 N67 TRANSFORMER
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


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    AN1261 L6590 optocoupler PC817 L6590D L6590A Diode 1N4005 silicon offline switcher china tv circuit diagram AWG23 ferrite n67 N67 TRANSFORMER PDF

    BC337 circuit example

    Abstract: optocoupler PC817 optocoupler IC PC817 ferrite n67 L6590D optocoupler IC PC817 pin details bc337 pin out diagram TRANSISTOR BC337 SMD tl431 and pc817 L6590
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


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    AN1261 L6590 BC337 circuit example optocoupler PC817 optocoupler IC PC817 ferrite n67 L6590D optocoupler IC PC817 pin details bc337 pin out diagram TRANSISTOR BC337 SMD tl431 and pc817 PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    very simple walkie talkie circuit diagram

    Abstract: walkie talkie circuit diagram fm transmitter project report walkie talkie, pcb layout and Schematic 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM design of FM transmitter final year project Design and construction Wave FM radio transmitter vhf transmitter of walkie talkie circuit diagram simple walkie talkie circuit diagram MC1648 modulator fm
    Text: I To Design and Build a Portable, Miniaturised, Multichannel FM Transmitter Author Francis Mc Swiggan 9427406 Supervisor Dr. Máirtín Ó Droma University Of Limerick Course B. Eng. Electronic Engineering LM070 Submitted in part requirement for final year project to


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    LM070) BR1334 MC1648/D very simple walkie talkie circuit diagram walkie talkie circuit diagram fm transmitter project report walkie talkie, pcb layout and Schematic 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM design of FM transmitter final year project Design and construction Wave FM radio transmitter vhf transmitter of walkie talkie circuit diagram simple walkie talkie circuit diagram MC1648 modulator fm PDF

    TSM103

    Abstract: L6590D BC337 L6590A offline switcher BZW06-154 PC-817 equivalent AWG23 AN1261 BC327
    Text: AN1261 APPLICATION NOTE GETTING FAMILIAR WITH THE L6590 FAMILY HIGH-VOLTAGE FULLY INTEGRATED POWER SUPPLY by Claudio Adragna In offline switchers in general and in low power ones in particular, the driving factors when making a design are reduction of cost, component count, size, weight as well as design to market.


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    AN1261 L6590 TSM103 L6590D BC337 L6590A offline switcher BZW06-154 PC-817 equivalent AWG23 AN1261 BC327 PDF

    mcz 300 1bd

    Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
    Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION


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    128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode PDF

    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


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    Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200 PDF

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan
    ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98 PDF