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    BJT IC VCE Search Results

    BJT IC VCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    BJT IC VCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9435R

    Abstract: NSB9435T1 NSB9435T1G power BJT PNP
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc


    Original     		PDF NSB9435T1 OT-223 NSB9435T1/D 9435R NSB9435T1 NSB9435T1G power BJT PNP

    9435R

    Abstract: NSB9435T1
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D 9435R NSB9435T1

    transistor bd 370

    Abstract: No abstract text available
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D transistor bd 370

    9435R

    Abstract: transistor BD 240
    Text: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF NSB9435T1 r14525 NSB9435T1/D 9435R transistor BD 240

    4030p

    Abstract: No abstract text available
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 4030P 4030PG NJT4030P/D

    MMJT9410

    Abstract: MMJT9410G
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G

    HP35821E

    Abstract: BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358
    Text: HP35821E NPN SILICON BJT TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI HP35821E is a Common Emitter Device Designed for Medium Power Class C Applications Operating at VHF,UHF Frequencies. MAXIMUM RATINGS IC 35 mA IC 180 mA MAX VCEO 20 V VCBO


    Original     		PDF HP35821E HP35821E BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358

    MMJT9435

    Abstract: No abstract text available
    Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —


    Original     		PDF MMJT9435 r14525 MMJT9435/D MMJT9435

    MMJT9410

    Abstract: power bjt
    Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —


    Original     		PDF MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF MMJT9410 MMJT9410/D

    KSC5502D

    Abstract: power BJT anti saturation diode KSC5302D KSC5302DI KSC5302DM KSC5305D KSC5338D KSC5402D KSC5402DT KSC5502DT
    Text: Discrete Power BJT Anti-Saturation Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC5302DM 800 400 12 2 25 20 - 0.4 - 0.4 2 0.2 TO-220 NPN Configuration KSC5302D


    Original     		PDF O-126 KSC5302DM O-220 KSC5302D KSC5402DT KSC5502DT KSC5504DT KSC5305D KSC5338D KSC5502D power BJT anti saturation diode KSC5302D KSC5302DI KSC5302DM KSC5305D KSC5338D KSC5402D KSC5402DT KSC5502DT

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    BDX548

    Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
    Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8


    Original     		PDF O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692

    8 pin ic 9435

    Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
    Text: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS


    Original     		PDF MMJT9435 OT-223 8 pin ic 9435 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor

    FJL6920 equivalent

    Abstract: fjaf6812 FJAF6815 FJL6920 equivalent fjaf6810 FJAF6810 equivalents transistor FJL6820 bu508af equivalent equivalent fjaf6812 FJL6820
    Text: Discrete Power BJT Horizontal Deflection Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-264 NPN Configuration FJL6820 1500 750 6 20 200 6 9 11 - 3 3 0.2 FJL6825 1500 750 6 25 200 6 9 12


    Original     		PDF O-264 FJL6820 FJL6825 FJL6920 BU508AF FJAF6808D FJAF6810 FJAF68 FJL6920 equivalent fjaf6812 FJAF6815 FJL6920 equivalent fjaf6810 FJAF6810 equivalents transistor FJL6820 bu508af equivalent equivalent fjaf6812 FJL6820

    power bjt

    Abstract: bjt npn npn power BJT KSC5042M power bjt datasheet KSC5042 KSC5042F BJT IC Vce
    Text: Discrete Power BJT Dynamic Focus Products VCBO V VCEO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC5042M 1500 900 5 0.1 4 30 - 0.01 - 5 900 5 0.1 10 30 - 0.01 - 5 5 0.1 6 30 - 0.01 - 5 TO-220 NPN Configuration


    Original     		PDF O-126 KSC5042M O-220 KSC5042 O-220F KSC5042F power bjt bjt npn npn power BJT KSC5042M power bjt datasheet KSC5042 KSC5042F BJT IC Vce

    KSC5027

    Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
    Text: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3


    Original     		PDF O-126 KSC2752 KSC5026M KSA1156 O-220 KSE13006 KSE13008 KSC2333 KSC5024 KSC5027 power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335

    power bjt

    Abstract: BJT IC Vce power BJT PNP KSC5200 3p transistor FJA4210 TO-264 FJA4310 KSA1943 KSA3010
    Text: Discrete Power BJT Audio and Car Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-264 NPN Configuration KSC5200 13 230 230 5 130 55 160 1 0.4 3 230 230 5 130 55 160 1 0.4 3 TO-264 PNP Configuration KSA1943


    Original     		PDF O-264 KSC5200 KSA1943 KSC4010 FJA4310 KSA3010 FJA4210 power bjt BJT IC Vce power BJT PNP KSC5200 3p transistor FJA4210 TO-264 FJA4310 KSA1943 KSA3010

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D

    Untitled

    Abstract: No abstract text available
    Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current


    Original     		PDF BCX5616Q 500mV BCX5316Q AEC-Q101 DS37024

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-001

    Logic Level Gate Drive mosfet

    Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-002

    NJL5165KL

    Abstract: No abstract text available
    Text: NJL5165KL Ej r c I # j È ' mm NJL5165KL» , ¡ ^ t t J ^ i O T S S ^ L E D f c ¡ S ! i J f <7 SI 7 a V V7 S C i S a i S I + O T U- > Zittii% 'BJtÉi: L f : ' M 7 i > y ^ i T - f tiB S iC : H t t h U 7 U i ’ ? -T"to m • 2 M t4 .0 m m X 5 .0 m m X 5 .0 m m )


    OCR Scan     		PDF NJL5165KL NJL5165KLÂ NJL5165KL