BIPOLAR TRANSISTOR HIGH VOLTAGE Search Results

transistor

Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
Contextual Info: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series

BUD43D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally

MTP8P10

Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally

npn transistor 400 volts.10 amperes

Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally

02D2G

Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

02D2G

Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

8 pin ic 3844 for 5 volts

Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

transistor zo 107

Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

D42DG

Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis­

at30b

Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
Contextual Info: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz

C945C

Contextual Info: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high

Contextual Info: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

BUD43D transistor

Abstract: 369D BUD42D BUD42DT4 MPF930 MTP8P10 d-pak DEVICE MARKING CODE table BUD43
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable

MJD18002D2

Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain

dpak 369C

Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain

18002D2

Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain