BIPOLAR TRANSISTOR BARE DIE Search Results

MA05110-DIE

Abstract: FE55-0005
Contextual Info: L-Band Voltage Controlled Oscillator 1.435 - 1.525 GHz Preliminary MA05110-DIE V 1P.00 Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process

FE55-0005

Abstract: MA05130-DIE
Contextual Info: S-Band Voltage Controlled Oscillator 2.2 - 2.4 GHz V 1P.00 MA05130-DIE Preliminary Features • • • • • • OUTLINE DRAWING Single supply 3 volt operation High Power Output: 10 dBm into 50 ohms Integrated Varactor 10 dB buffer amplifier Low Phase Noise due to InGaP HBT process

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Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Contextual Info: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and

Transistor C 1279

Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
Contextual Info: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators

ATC520L103KT16T

Abstract: MARKING HBT GSA612-12
Contextual Info: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die

ATC520L103KT16T

Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
Contextual Info: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die

GSA804-12

Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
Contextual Info: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die

GSA603-12

Abstract: GSA-603-12 gsa603
Contextual Info: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have

Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.

Contextual Info: MOTOROLA Order this document by MMDJ3N03BJT/D SEMICONDUCTOR TECHNICAL DATA P lastic Power Transistors M M DJ3N03BJT SO-8 for Surface Mount Applications M otorola Preferred Device • Collector -Emitter Sustaining Voltage — V c e O s u s = 30 Vdc (Min) @ lc = 10 mAdc

ATC520L103KT16T

Abstract: bipolar transistor ghz s-parameter GSA-603 RF Transistor s-parameter GSA603-00 Transistor s-parameter at 2GHz bipolar transistor s-parameter RF Transistor s-parameter at 4GHz 4ghz s parameters transistor BCS-802JLC
Contextual Info: GSA603-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01MHz to 4 GHz The GSA603-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 4GHz frequency range with 18dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz

ATC520L103KT16

Abstract: GSA606 ATC520L103KT16T GSA606-00 bipolar transistor ghz s-parameter
Contextual Info: GSA606-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 to 7GHz The GSA606-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz

bipolar transistor ghz s-parameter

Abstract: RF Transistor s-parameter HBT transistor bipolar transistor s-parameter GSA503-00
Contextual Info: GSA503-00 InGaP HBT Gain Block DIE Product Features ● 0.01MHz to 4 GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 20 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Bare die Applications ● Mobile infrastructure

ATC520L103KT16T

Abstract: ATC520L103KT16 HBT transistor RF TRANSISTOR 2GHZ BIPOLAR TRANSISTOR BARE die bipolar transistor ghz s-parameter
Contextual Info: GSA612-00 InGaP HBT Gain Block DIE Product Features Product Description ● 0.01 MHz to 12GHz The GSA612-00 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 0.01MHz to 12GHz frequency range with 12dB nominal gain at 2GHz. ● +12 dBm P-1dB at 2GHz

Contextual Info: General Cable’s broad line of VFD Industrial Cable solutions is tested and certified on both a regional and global level. In addition to the cable constructions below, we are designing, engineering and manufacturing custom cables to meet unique requirements every day.

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
Contextual Info: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
Contextual Info: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different

AD544LH

Abstract: ad542jh AD542 bifet Wien Bridge Oscillator jfet AD547 uv flame sensor AD544 AD642 AD644
Contextual Info: a FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB High Slew Rate: 13 V/␮s Fast Settling to ؎0.01%: 3 ␮s

AD544

Abstract: AD547 Wien Bridge Oscillator jfet Wien Bridge Oscillator jfet circuit uv flame sensor AD542 AD642 AD644 AD647 AD7541
Contextual Info: a High Performance, BiFET Operational Amplifiers AD542/AD544/AD547 FEATURES Ultralow Drift: 1 ␮V/؇C AD547L Low Offset Voltage: 0.25 mV (AD547L) Low Input Bias Currents: 25 pA max Low Quiescent Current: 1.5 mA Low Noise: 2 ␮V p-p High Open Loop Gain: 110 dB

AD705

Abstract: a07-06 AD704SE ad706 AD704KN
Contextual Info: ANALOG DEVICES □ FEATURES HIGH DC PRECISION Low Offset V oltage 75 nV max: AD704 (35 11V max: AD705) (50 nV max: AD706) Low O ffset D rift (1.0 n V /°C max: AD704) (0.6 n V /°C max: AD705) (0.6 (iV /°C max: AD706) Low Input Bias Currents (150 pA max: AD704)

philips rf manual

Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
Contextual Info: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal

AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Contextual Info: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5