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    BIPOLAR TRANSISTOR 124 E Search Results

    BIPOLAR TRANSISTOR 124 E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR 124 E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


    Original     		PDF

    CM1600HB-34H

    Abstract: SWITCHING TRANSISTOR 144
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1600HB-34H CM1600HB-34H SWITCHING TRANSISTOR 144 PDF

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 PDF

    CM1600HC-34H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1600HC-34H CM1600HC-34H PDF

    "induction heating" circuit

    Abstract: CM1200HC-34H transistor su 110
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1200HC-34H "induction heating" circuit CM1200HC-34H transistor su 110 PDF

    CM2400HC-34H

    Abstract: TRANSISTOR Q 667 17800
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM2400HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM2400HC-34H CM2400HC-34H TRANSISTOR Q 667 17800 PDF

    CM1800HC-34H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE


    Original     		CM1800HC-34H CM1800HC-34H PDF

    CM400DY-50H

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM400DY-50H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H


    Original     		CM400DY-50H CM400DY-50H PDF

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma
    Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The


    Original     		AT-41586 AT-41586 5965-8908E 5989-2651EN AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma PDF

    "Bipolar Transistor"

    Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
    Text: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron


    Original     		AT-42010 AT-42010 5965-8910E AV01-0022EN "Bipolar Transistor" TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 TRANSISTOR 200 GHZ UHF transistor GHz S21E PDF

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


    OCR Scan     		40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852 PDF

    ZO 103 MA 75 623

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / C M PN TS m blE D • 4 4 4 7 5A 4 0 0 0 ^ 7 6 0 t.E7 H H P A AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip H EW LETT PACKARD Chip Outline Features 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz


    OCR Scan     		AT-01600 ZO 103 MA 75 623 PDF

    2500ECL

    Abstract: Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca
    Text: BR334/D Rev 3 Motorola Semicustom gives the designer the same process-technology choices available for discrete-logic designs, and the option of Macrocell array or cell-based func­ tions for commercial and military applications. • For very high speeds — state-of-the-art ECL arrays.


    OCR Scan     		BR334/D 2500ECL Motorola Bipolar Power Transistor Data Double Die IC 566 function generator HCA62A17 CMOS 4032 1987 Micron Technology Micron NAND bca 1st motorola ECL motorola mca PDF

    AT-60535

    Abstract: No abstract text available
    Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz


    OCR Scan     		0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478 PDF

    Untitled

    Abstract: No abstract text available
    Text: W fw lH E W L E T T mL'HM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Description Features The MSA-0886 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit 32.5 dB Typical at 0.1 GHz MMIC housed in a low cost,


    OCR Scan     		MSA-0886 MSA-0886 Available111 5965-9547E G01flb3S PDF

    MSA-0886

    Abstract: MSA0886-BLK
    Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features Description • Usable Gain to 5.5 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz


    OCR Scan     		MSA-0886 MSA-0886 MSA0886-BLK PDF

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features D escription • Usable Gain to 5.5 GHz • High Gain: The MSA-0886 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit


    OCR Scan     		MSA-0886 MSA-0886 PDF

    npn pnp transistor bipolar cross reference

    Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
    Text: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with


    OCR Scan     		AT-42010 AT-42010 Rj/50 DD17bSfl M4475fl4 PDF

    C945C

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high


    OCR Scan     		AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C PDF

    PJ 0416 1v

    Abstract: PJ 1179
    Text: What H E W LET T 1"KM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Perform ance at 2.7 V, 5 mA:


    OCR Scan     		AT-32032 OT-323 SC-70) SC-70 OT-323) PJ 0416 1v PJ 1179 PDF

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz


    OCR Scan     		AT-42010 AT-42010 Rn/50 PDF

    Untitled

    Abstract: No abstract text available
    Text: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


    OCR Scan     		AT-41470 AT41470 AT-41470 Q017b3fl DQ17b3ti PDF

    Untitled

    Abstract: No abstract text available
    Text: HE WLE TT-PACKARD/ CMPNTS blE » • 4447Sfl4 OODTflm fibfl IHPA AT-60100 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip rm H EW LETT f t X l PACKARD Chip Outline1 Features • Low Bias Current Operation • Low Noise Figure: 1.9 dB typical at 2.0 GHz


    OCR Scan     		4447Sfl4 AT-60100 PDF