BIPOLAR TRANSISTOR Search Results

sla 1003

Abstract: STA434A SLA4390 SLA4391 STA431A Sla5013 transistor C1505 SLA434 STA431 13002a
Contextual Info: 2-3 Transistor Arrays & MOS FET Arrays 2-3-3 For Motor Drive •H-Bridge Number VCEO V Part No. IC(A) of Circuits VDSS(V) ±30 STA458C Chip ID(A) STA431A Bipolar 40 SIP10Pin Bipolar 40 SIP10Pin Bipolar 1000 SIP10Pin Bipolar 2000 SIP10Pin Bipolar 80 Bipolar

sla 1003

Abstract: SLA5041 SLA4060 SLA5046 SLA4030
Contextual Info: Transistor Arrays & MOS FET Arrays 2-3 2-3-1 For Sink Drive •General Purpose Part No. STA312A STA303A Number of Circuits 3 SDC01 VCEO V IC(A) VDSS(V) Bipolar 300 SIP8Pin Bipolar 1000 SIP8Pin 50 2 Bipolar 1000 SMD16Pin 3 Bipolar 300 4 MOS 0.45 SIP10Pin 5

Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

100-C

Abstract: IRGMC30F 9714A
Contextual Info: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

2sc 1740 TRANSISTOR equivalent

Abstract: 40HFL60 IRGMC40F 480V1
Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

ir*c30ud

Abstract: IRGMC30U
Contextual Info: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

til 31a

Abstract: IRGMC40U
Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

IRGMC50F

Abstract: IRGMC50FD IRGMC50FU 39AF
Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

T3D 87

Abstract: t3d 99 G-100 IRGMC50U
Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while

PJ 986

Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
Contextual Info: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs

BUF 460 AV

Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C

Semefab Scotland

Abstract: semefab
Contextual Info: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and

Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts

cfl low loss drive

Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Contextual Info: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer

IGBT snubber for inductive load

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device

BD136

Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts