BIPOLAR POWER TRANSISTOR DATA Search Results
BIPOLAR POWER TRANSISTOR DATA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, |
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NFM15PC755R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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NFM15PC435R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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NFM15PC915R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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BIPOLAR POWER TRANSISTOR DATA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
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Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 | |
Electronic components book
Abstract: Hitachi transistor power electronic transistor
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transistor
Abstract: transistor equivalent book "Bipolar Transistors" transistors bipolar transistors free transistor equivalent book Power Bipolar Transistors DATA TRANSISTOR semiconductors Transistor Data Book
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Contextual Info: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY |
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PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101 | |
sot669 footprintContextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY |
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PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint | |
Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC |
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PHPT61002NYC OT669 LFPAK56) PHPT61002PYC | |
PHPT60603NYContextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY |
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PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY | |
D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
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MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 | |
Contextual Info: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK. |
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PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101 | |
Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY |
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PHPT61003NY OT669 LFPAK56) AEC-Q101 | |
sot669 footprintContextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY |
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PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint | |
Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY |
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PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 | |
Contextual Info: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. |
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PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101 | |
Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. |
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PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 | |
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Contextual Info: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. |
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PHPT61002PYC OT669 LFPAK56) PHPT61002NYC. | |
D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: BUK856-400 BUK856-400IZ igbt philips
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BUK856-400 O220AB D 400 F 6 F BIPOLAR TRANSISTOR BUK856-400IZ igbt philips | |
D 400 F 6 F BIPOLAR TRANSISTORContextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, |
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BUK856-400 T0220AB D 400 F 6 F BIPOLAR TRANSISTOR | |
Eecr1
Abstract: BUK856-400 BUK856-400IZ igbt philips 3050v
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BUK856-400 O220AB Eecr1 BUK856-400IZ igbt philips 3050v | |
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot |
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MJD18002D2 MJD18002D2 MJD18002D2/D | |
02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
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MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 | |
02D2G
Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
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MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G 18002d2 motorola transistor dpak marking MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127 | |
BUK854-800A
Abstract: T0220AB
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BUK854-800A T0220AB T0220AB; T0220 BUK854-800A T0220AB | |
BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
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MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 | |
transistor rc 3866
Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
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MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108 |