|
TTC022
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
|
|
|
TTC020
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
|
|
|
2SA1213
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini |
|
|
|
GT30J110SRA
|
|
Toshiba Electronic Devices & Storage Corporation
|
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
|
|
|
TPCP8515
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
|
|
