BIPOLAR BC TRANSISTOR Search Results

Transistor BC 227

Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V

transistor BC SERIES

Abstract: bd transistor series BC transistor series BIPOLAR TRANSISTOR 2n transistor KSA transistor D.A.T.A. book ksd transistor series bd transistor data book
Contextual Info: TRANSISTOR DATA BOOK Small Signal TR KSA Ser es KSB Ser es KSC Ser es KSD Ser es KSK Ser es KSR Ser es 2N Ser es BC Ser es KST Ser es KSP Ser es SS Ser es Bipolar Power TR KSA Series KSB Series KSC Series KSD Series BD Series BU Series KSH Series KSE Series

bc 617 transistor equivalent

Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
Contextual Info: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP

BSS125

Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)

bc 5411

Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
Contextual Info: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

Contextual Info: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

W67B

Contextual Info: Section E: Bipolar Transistors _ Loin S a tu ra tio n T ra n s is to rs up to I OOV S O T 2 3 M e d iu m P ow e r P N P L o w V o lta g e up to 100V Pinout Details: 1-Collector, 2-Emitter, 3-Base V CBO V CEO h FE lc Type

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ssot-6

Abstract: MMBT pnp FJ sot23 sot 223 fairchild
Contextual Info: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 ܧ

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

BC177 NPN transistor

Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
Contextual Info: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3

bc557

Abstract: BDX472 BDX452
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics

603 transistor npn

Abstract: BT 316 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —

lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ
Contextual Info: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com

RF Transistor s-parameter

Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
Contextual Info: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA

NF 847 G

Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W

SiC BJT

Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Contextual Info: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to

BTA18

Abstract: MMBT pnp BT5771 SOT23 M
Contextual Info: Fairchild Semiconductor Qjscrete pQwer an j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T *» *6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089

THC3251A

Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

Contextual Info: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options

transistor bc 7-40

Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060
Contextual Info: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American

372M

Abstract: BC372M
Contextual Info: Section S: Bipolar Transistors D a rlin g to n T r a n s is to rs E-Line PIMP High Perform ance D a r l i n g t o n T r a n s ' s t o i s - Po = up t 1W} Pinout :1-Collector, 2-Base,