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    BIFET AMPLIFIER DISCRETE SCHEMATIC Search Results

    BIFET AMPLIFIER DISCRETE SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TIPD146
    Texas Instruments Op Amp with Single Discrete Bipolar Transistor Output Drive Visit Texas Instruments
    OP07-W
    Texas Instruments Precision Operational Amplifier 0-WAFERSALE Visit Texas Instruments
    TIPD116
    Texas Instruments Data Acquisition Block for ECG Systems, discrete LEAD I ECG implementation Reference Design Visit Texas Instruments
    TLV1805Q1EVM
    Texas Instruments TLV1805-Q1 Comparator Based Discrete Reverse Current Protection Circut Evaluation Module Visit Texas Instruments Buy
    LM118 MW8
    Texas Instruments Operational Amplifier 0-WAFERSALE -55 to 125 Visit Texas Instruments

    BIFET AMPLIFIER DISCRETE SCHEMATIC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    amelco

    Contextual Info: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100G HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C


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    LS320 200mW 25-year-old, amelco PDF

    amelco

    Contextual Info: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100GΩ HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C


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    LS320 200mW 25-year-old, amelco PDF

    Accelerometers

    Abstract: TLV24xx TLE2161 TLV2772 ne55x TLE2082 "operational amplifier selection guide" TLE2227 Texas Instruments CMOS TLE2682
    Contextual Info:                        Amplifiers 1-1                         Signal Conditioning – Amplifiers 1-1 Operational Amplifier                        1-2 Signal Conditioning - Amplifiers


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    PDF

    35F0121-1SR-10

    Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology   


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    RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR PDF

    thermocouple gaas

    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN


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    RF3928280W RF3928 RF3928 DS110317 thermocouple gaas PDF

    Contextual Info: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V


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    RF7411 10-Pin, 28dBm 203mm 330mm 025mm DS111206 PDF

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar PDF

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD PDF

    bifet amplifier discrete schematic

    Abstract: ERJ8GEYJ100V thermocouple gaas
    Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


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    RF3934 RF3934 DS120202 bifet amplifier discrete schematic ERJ8GEYJ100V thermocouple gaas PDF

    Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


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    RF3934 DS120306 PDF

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED PDF

    Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928 RF3928280W DS120508 PDF

    Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


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    RF3934 RF3934 DS120306 PDF

    RFMD PA LTE

    Abstract: RF7413 RF-741
    Contextual Info: RF7413 3V WCDMA BAND 3 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm CONFIDENTIAL: NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/LTE High Efficiency WCDMA Operation: 41% at POUT=+28dBm RF IN Low Voltage Positive Bias


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    RF7413 10-Pin, 28dBm RF7413 203mm 330mm 025mm DS111206 RFMD PA LTE RF-741 PDF

    GaN ADS

    Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features „ „ „ „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


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    RF3934 RF3934 DS111121 GaN ADS PDF

    ATC800B5R6

    Abstract: ATC800B6R8 ATC800B120
    Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


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    RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120 PDF

    RF3928B

    Abstract: power transistor gan s-band RF392
    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS111208 power transistor gan s-band RF392 PDF

    Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 RFHA1025 96GHz 215GHz DS120928 PDF

    simple power supply schematic diagram

    Abstract: RF3931S2 ATC800A3R3BT
    Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


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    RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT PDF

    atc100a150

    Abstract: power transistor gan s-band
    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band PDF

    Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


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    RF3931 900MHz DS120406 PDF

    Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


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    RF3931 900MHz RF3931 DS120202 PDF

    Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RFHA1025 96GHz 215GHz DS120613 PDF

    Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    RF3928B DS120503 PDF