BH RV TRANSISTOR Search Results

temic 0675

Abstract: BH RV transistor BH RV debouncing relay contact debounce time BH Re transistor water pump U2640B z-diode 533 zener diode 328
Contextual Info: U2640B Intermittent- and Wipe/Wash Control for Wiper Systems With the U264xB, TEMIC Semiconductors developed a family of intermittent- and wipe/wash control circuits for windshield or backlite wiper systems with identical basic functions. The circuit design provides the possibility to

2N7073

Contextual Info: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated

Contextual Info: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

BH RV transistor

Abstract: F6 sot223
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3- FEBRUARY 1995_ FEATURES * Low saturation voltage CO M PLEM ENTARY T Y P E - FZT753 P A R T M A R K IN G D E T A IL - FZT653 ABSOLUTE M A X IM U M RATINGS. SY M BO L VALUE

BH RV transistor

Contextual Info: HOA1875 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile housing • Wide operating temperature range -55°C to +100°C • 0.200 in.(5.08 mm) slot width DESCRIPTION The HOA1875 series consists of an infrared emitting

transistor tt 2222

Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Contextual Info: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­

CD4077B Family specifications

Abstract: 74LS CD4030A CD4070B CD4077B MC14070B MC14077B cd4070BCN
Contextual Info: MR 3 1 >992 March 1992 CD4070BM/CD4070BC Quad 2-Input EXCLUSIVE-OR Gate CD4077BM/CD4077BC Quad 2-Input EXCLUSIVE-NOR Gate General Description Features Employing complementary MOS CMOS transistors to achieve wide power supply operating range, low power con­

TRANSISTOR A3

Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Contextual Info: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

TRANSISTOR BH RW

Abstract: BH RV transistor h0a1180 0a1180
Contextual Info: H 0A1180 Reflective Sensor FEATU RES • C h o ice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 A W G P V C insulated wire leads D E S C R IP T IO N

2n2222 texas instruments

Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
Contextual Info: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 1147 A ISSUE 1 - JANUARY 1997_*" FEATURES * V c e o = -12V * 4 A m p C o n tin u o u s C u rre n t * 2 0 A m p p u ls e C u rre n t * L o w S a tu ra tio n V o lta g e

d00030

Abstract: 2SA1741 T108 BH RV transistor
Contextual Info: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3

Contextual Info: SEC pPD72002 Ordering Information 44-Pln P lastic QFP Package Part Number fiPD72002CZ-11 40-pln plastic DIP pPD72002GB-113B4 44-pln plastic QFP jttPD72002LM-11 44-pin plastic leaded chip carrier PLCC Q I k | < l i ic/> 2 il t l b lE lg z lo l o ld l o O is 13 IS la. la.

MAX038CPP

Abstract: MC145 MAX038 MAX038C MAX038CWP MAX038E MAX038EPP MAX038EWP cbu 4j
Contextual Info: y k iy jx iy i/ i a r . m B i / i z i ; - ? M A X 038IS5H Ì\frafifi*IS^a^Jvpglcfip^rc. B ffift, 5, B ^BB2.5V A '> K ^ '-p '7 ^ B E U m m m J z iy ^ y m z ^ - D Z o. 1 h z ~ 2 0 m h z s m s

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

PA505T

Abstract: oasis T460
Contextual Info: NEC M O S M O S Field Effect Transistor ¿¿PA505T M ¿¿PA505T Ü , MOS F E T ^ O S F E T m 2@ M 1 L ^ ^ Î - 5 k m ° > 2 (W -ÎÈ L • S § mm) 0.32 ¥ 8 î t o S C - 59 ^ ° > y ^ - ^ t [ 5] t + f - 'f X ^ 7 y - ÿ il 0 .9 5 .0 . 9 5 . 3 > 7 ° ij y > ^ ij ¿0 M O S F E T £ 1

Contextual Info: MH88630 Central Office Interface LS/GS Preliminary Information Features _ ISSUE 7_ April 1995 • T ransform erless 2-4 W ire conversion • Line state detection outputs: O rdering Inform ation M H88630 40-Pin DIL Package

am26c321

Abstract: AM26C32 AM26C32C AM26C32CNSLE AM26C32I AM26LS32 RS-422-A D3634 IRAMY
Contextual Info: AM26C32C, AM26C32I QUADRUPLE DIFFERENTIAL LINE RECEIVERS _^ _ * Meets EIA Standards RS-422-A, RS-423-A, and CCITT Recommendation V.11 * Low Power, lcc = 9 mA Typ * ± 7-V Common-Mode Range With ±200-mV Sensitivity

DG37

Abstract: SV 37015 U/25/20/TN26/15/850/SV 37015 TIPL751A TIPL751 BY206 DG37D1S
Contextual Info: "bH DD37011 0 TEXAS INSTR -COPTO} 8961726 TEXAS INSTR <OPTO> _ ! 62C 37011 TIPL751, TIPL751A N-P-N SILICON POWER TRANSISTORS O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4 • 120 W at 2 5 ° C Case Temperature • 4 A Continuous Collector Current

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

transistor MWTA 06

Abstract: transistor marking bh ra diode SS 3 marking WMM T460-8525 BH rn transistor nec 8525 transistor bh ra 2SJ202 2SK1580
Contextual Info: 7 * — • S 5 /— H Mos M O S Field Effect Transistor 2 P 2 S J 202 ü ^ ' y f ' J M O S * m o s Ì ' ò £ ' ^ W g n t i « f F E T F E T % € J ± f ë € i t ë 2 {@ i m & T m m x - è , m W l? ~ ?<F> P 4 V T R : ì ' ' f 2 tb , è & g t t z > & %

Contextual Info: HOA1872 Transmissive Sensor FEATU RES • C h o ice of phototransistor o r photodarlington output J m , • T h ree sensitivity ranges • C h o ic e of m etal can packag e or plastic m olded com ponents Jm F J W • 0 .100 in. 2.54 mm slot width INFRA-14.TIF

lf351

Abstract: Lf351 equivalent
Contextual Info: ZN559 LOW COST 8-BIT LATCHED INPUT MONOLITHIC D-A CONVERTER The ZN559 is a low cost 8-bit D-A converter with input latches to facilitate updating from a data bus. The latch is transparent when enable is LOW and the data is held when enable is taken HIGH. The device has a precision 2.5V

BLY87A

Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
Contextual Info: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y