BH RF TRANSISTOR Search Results

Contextual Info: M j J i « RF P m d ucts M ic m m s e m i 140 Commerce Drive Montgomeryville, PA 1893S-1013 Tel: 215 631-9840 SD1483 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLiCATIONS FM CLASS C T R A N S :STOR • * ■ . * * « FREQUENCY VOLTAGE? PO W bHÜU f POWER GAIN

class D power amplifier 6.78 MHz

Abstract: 6.78 mhz crystal oscillator small loop antenna 13.56 13,56MHz ASK receiver IC fsk ENCODER fsk encoder datasheet power amplifier 6.78 MHz RF inductor 13.56 MHz 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Contextual Info: U2741B UHF ASK/FSK Transmitter Description The transmitting frequency range is 300 MHz to 450 MHz. It can be used in both FSK and ASK systems. Gm bH The U2741B is a PLL transmitter IC which has been specially developed for the demands of RF low-cost data transmission systems at data rates up to 20 kBaud.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •

MCA45T

Abstract: capacitor philips ll
Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

ceramic disc capacitor 100nf 104

Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

BFR92ALT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistors Designed primarily for use in high-gain, iow-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface mount components.

56590653B

Abstract: BH Rf transistor
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON

Contextual Info: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistors Designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin—film circuits using surface mount components.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW

Contextual Info: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed

ferroxcube for ferrite beads 56-590-65

Abstract: ferroxcube 56-590-65 vk200-20 VK-200 transistor j201 arco 469 arco 466 MRF454 motorola vk200 ferroxcube for ferrite beads
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

LT1817 transistor

Abstract: LT1817
Contextual Info: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR

germanium transistors PNP

Abstract: transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305
Contextual Info: PNP Germanium Transistors PIMP Germanium RF A lloy Transistors in T 0 1 and T 0 5 metal cases Characteristics at T amb=25°. M axim um ratings Type Case B VCEO V Bvcso bvebo V V XCM mA mW JJM °C hF E ^ C E / i C V /m A ) pt o t ' h/rf ^ C E ^ Ó (V /m A I

MCA443

Abstract: 70cN
Contextual Info: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file

BH Rf transistor

Abstract: mrf1150m
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • • Specified 12.5 Volt, 470 M Hz Characteristics —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1150MA MRF1150MB The RF Line 1SO W PEAK. 960-1215 MHi MICROWAVE PULSE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS NPN S IL IC O N . designed fo r Class 6 and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.

Contextual Info: 2SC1923 SEMICONDUCTOR forward international b u c t r q n k s ltd . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS, FM,RF,M3XJF AMPLIFIER APPLICATIONS. Package: TO-92 * Small Reverse Transfer Capacitance:Cr^=0,7pF TYP,

BH Rf transistor

Abstract: BLS2731-50
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -50 PINNING SOT422A FEATURES • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness

MRF284

Contextual Info: <z/V.e.txr ZPioauati, {Jna. tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Advance Information The RF Sub-Micron MOSFET Line MRF284S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

modem FSK

Abstract: BH rx transistor 11789 ceramic filter 450 kHz MC 13320 audio scrambler U2782B U2796B U3500BM U3501BM
Contextual Info: U3501BM Cordless Telephone-Signal Processor Description such as IF converter, FM demodulator, RSSI. Several gains and mutes in transmit and receive direction are controlled by a serial bus while compander, pre- and deemphasis and scrambler can be bypassed.