100nk 630
Abstract: BH CAPACITORS marking BQ 4 100nK63 100nk 63 100nk 400 BH film CAPACITORS
Text: BF/BQ/BH Film Capacitors Radial Leaded BQ/BH-RoHS 5mm Dielectric: Metallized polyester film (Polyethylene terephtalate) Stacked-film Leads: Radial tin - plated wire Protection: Plastic case (UL 94: V-O) / Epoxy Resin Marking: Logo BH Marking: Logo BF/BQ
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100nK
D474KC8L
BF02/*
BQ02/*
BF07/*
BQ07/*
100nk 630
BH CAPACITORS
marking BQ 4
100nK63
100nk 63
100nk 400
BH film CAPACITORS
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marking BH
Abstract: KTX213E
Text: SEMICONDUCTOR KTX213E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BH KTX213E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KTX213E
marking BH
KTX213E
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KTX213U
Abstract: marking BH
Text: SEMICONDUCTOR KTX213U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BH 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BH KTX213U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KTX213U
KTX213U
marking BH
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JPW200S52R51-BH
Abstract: JPW200S52R5-BH 407243997
Text: Data Sheet June 10, 2004 DS03-090 ver. 1.0 PDF: jpw200s52r5-bh.pdf JPW200S52R5-BH Power Module: dc-dc Converter; 38 Vdc to 75 Vdc Input, 52.5 Vdc Output; 200 W Features The JPW200S52R5-BH Power Module uses advanced surfacemount technology and delivers high-quality, efficient,
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DS03-090
jpw200s52r5-bh
ISO9001
x3001
jpw200s52r5-bh
JPW200S52R51-BH
407243997
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2255 LE25CB643TT-BH CMOS IC 64 kb SPI CMOS Serial EEPROM http://onsemi.com Overview The LE25CB643TT-BH hereinafter referred to as ‘this device’ is serial peripheral interface EEPROM (Electrically Erasable and Programmable ROM). This device realizes high speed and a high level reliability by incorporating high
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ENA2255
LE25CB643TT-BH
32bytes
A2255-17/17
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smd marking BG
Abstract: BCX71H BCX71J BCX71K BCX71G
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ
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OT-23
BCX71G
BCX71H
BCX71J
BCX71K
BCX71G
BCX71J
200mA
smd marking BG
BCX71H
BCX71K
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ
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OT-23
BCX71G
BCX71H
BCX71J
BCX71K
BCX71G
BCX71J
200mA
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SC017
Abstract: SC017-2 SC017-4
Text: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged
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SC017
SC017-2
SC017-4
SC017
SC017-2
SC017-4
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Untitled
Abstract: No abstract text available
Text: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged
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SC017
SC017-2
SC017-4
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VR BH RC
Abstract: No abstract text available
Text: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged
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SC017
SC017-2
SC017-4
VR BH RC
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Untitled
Abstract: No abstract text available
Text: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged
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SC017
SC017-2
SC017-4
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marking BH-10
Abstract: No abstract text available
Text: MODEL SERIES BH Single In-Line High Profile Conformal Coated Thick Film Resistor Network ELECTRICAL Standard Resistance Range, Ohms Standard Resistance Tolerance, at 25°C Operating Temperature Range Temperature Coefficient of Resistance Temperature Coefficient of Resistance, Tracking
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100ppm/
250ppm/
50ppm/
MIL-STD-202
marking BH-10
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bcx71
Abstract: No abstract text available
Text: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND
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BCW61
BCX71
BCX71G
BCX71H
BCX71J
BCW60
BCX70
OT-23
BCX71
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Untitled
Abstract: No abstract text available
Text: BH 01/02/07/06/05: Radial Leads Lead Free Product CPM-N- pitch = 5.08mm (0.200") GENERAL DESCRIPTION Dielectric: Metallized polyester film (Polyethylene teraphtalate) Stacked-film Leads: Radial tin - plated wire Protection: Plastic case (UL 94: V-O) / Epoxy Resin
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D474KC8L
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D474KC8L
Abstract: D474K cr avx
Text: BH 01/02/07/06/05: Radial Leads Lead Free Product CPM-N- pitch = 5.08mm (0.200") GENERAL DESCRIPTION Dielectric: Metallized polyester film (Polyethylene teraphtalate) Stacked-film Leads: Radial tin - plated wire Protection: Plastic case (UL 94: V-O) / Epoxy Resin
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D474KC8L
384-1/CECC
30000/UTE
384-2/CECC
30400/UTE
S-BH00M504-N
D474K
cr avx
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BH rx transistor
Abstract: BH-S8862
Text: T1/CEPT/ISDN-PRI TRANSFORMER P/N: BH-S8862 DATA SHEET A. GENERAL SPECIFICATIONS 1. EXTENDED AND STANDARD TEMPERATURE RANGE MODELS. 2. DUAL SURFACE MOUNT PACKAGE CONTAINS BOTH TRANSMIT AND RECEIVE 3. MODELS MATCHED TO LEADING TRANSCEIVER ICS. 4. UL 1459 RECOGNIZED.
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BH-S8862
1500vrms.
BH rx transistor
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D104K
Abstract: No abstract text available
Text: BH 01/02/05/06/07 CPM-N — 5.08 Radial Leads 63/100/250/400 VAPPLICATIONS Schematic Cross Section Non-inductive, self-healing, metallized polyester film capacitor. Insulated* thermoplastic casing, epoxy resin sealed with stand-offs*. Radial connections with a lead spacing of 5.08
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384-1/CECC
30000/UTE
D104K
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147 B transistor
Abstract: Transistor 2SB 148 2SB1386 2sb transistor
Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A
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2SB1386
OT-89
SC-62)
2SB1386;
2SB1386
147 B transistor
Transistor 2SB 148
2sb transistor
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Untitled
Abstract: No abstract text available
Text: I t BH Electronics 5 c’r ' ^ Miniature Axial Leaded Inductors • • • • • Tape and Reel Packaged Small Size Color Coded Marking Epoxy Dipped Construction Q = 30 INDUCTANCE NUMBER UH TOL. SELF-RESONANCE FREQUENCY (MHz) (MIN.) DC RESISTANCE (OHM) (MAX.)
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11775bÃ
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Untitled
Abstract: No abstract text available
Text: BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P Silicon transistors Marking PACKAGE O UTLINE DETAILS ALL DIM ENSIONS IN mm BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK _3.0_ 2.8 0.14 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE
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BCX71G
BCX71H
BCX71J
BCX71K
BCX71G
BCX71H
BCX71J
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Untitled
Abstract: No abstract text available
Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A
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2SB1386
OT-89
SC-62)
2SB1386;
2SB1386
QG14737
2SB1412F5
2SB1412F5
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THERMAL Fuse RESISTOR SQF 5
Abstract: RS-196A sqf5 AC1000V TYOHM 10 ohm resistor SQF
Text: TT&bH Document No.: S-E16.1 TY-OHM ELECTRONIC WORKS CO., LTD. SQF THERMAL FUSE INCORPORATED CEMENT RESISTORS 187°C 5A RESISTOR SPECIFICATION Version: 2003.A APPROVED BY APPROVED REVIEWED •if Unauthorized duplication is prohibited PRODUCED <5^ ( y 1 1M -
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S-E16
THERMAL Fuse RESISTOR SQF 5
RS-196A
sqf5
AC1000V
TYOHM
10 ohm resistor SQF
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Untitled
Abstract: No abstract text available
Text: Miniature Axial Leaded Inductors Tape and Reel Packaged Small Size Color Coded Marking Epoxy Dipped Construction Q = 30 INDUCTANCE BH PART NUM BER 501-0453 uH TOL. 0.10 501-0454 0.12 501-0455 0.15 501-0456 501-0457 SELF-R ESO N A N C E FREQ UENCY (M Hz) (M IN.)
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l400bb70v
Abstract: L400BB12VC
Text: AMD3 Am29LV400B 4 Megabit 512 K X 8-BH/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV400B
8-BH/256
16-Bit)
20-year
Am29LV400BT80
Am29LV400BB80
l400bb70v
L400BB12VC
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