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    TE Connectivity LBF-W413787430731A05

    LBF-W413787430731A05
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    TE Connectivity LBF-W413786290831A06

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    Others LBF-W413787430731A05

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    BFW41 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFW41 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFW41 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFW41 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFW41 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFW41 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFW41 Semico RF-IF High Frequency Transistors Scan PDF

    BFW41 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2369 SOT-23

    Abstract: nec RF package SOT89 2SC934 BSX26 2N5180 2SC389 BFY63 s0918 BSX87 2SC288A
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 >= Manufacturer V(BR)CEO fT (V) (Hz) hFE 15 15 15 15 15 15 15 15 15 15 500M 500M 500M 500M 500M 500M 500M 500M 500M 500M 40 40 40 40 40 40 40


    Original
    2SC3735 BFR54 BSX20 PH2369 ZTX313 ZTX314 2N2369 2SC389 2N2369 SOT-23 nec RF package SOT89 2SC934 BSX26 2N5180 BFY63 s0918 BSX87 2SC288A PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    BF311

    Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350


    OCR Scan
    BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF494 bf199 BF159 BF314 BF167 PDF

    bf311

    Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
    Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •


    OCR Scan
    BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 bf311 BF494 BF253 BF595 BF200 transistor BF271 BF184 PDF

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


    OCR Scan
    O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60 PDF

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


    OCR Scan
    057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    BF311

    Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max


    OCR Scan
    BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240 PDF

    BF311

    Abstract: BF374 BF494 bf199 BF199 BF253
    Text: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38


    OCR Scan
    BF115 BF155 BF167 BF173 BF180 BF181 BF311 BF374 BF494 bf199 BF199 BF253 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan
    Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF