mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE
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CP005-1F
IS89C51
Z16C02
Z86E30
ZZ16C03
Z8036
Z8536
Z8038
Z5380
Z53C80
mn4117405
NN5118165
XL93LC46AP
NN514265
MS6264L-10PC
w24M257
NN514265A
w24m257ak-15
HY62256ALP10
mhs p80c51
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UM61256AK-15
Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE
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CP005-1E
AS7C1024-12JC
AS7C1024-12PC
AS7C1024-12TJC
AS7C1024-12TPC
AS7C1024-15JC
AS7C1024-15PC
AS7C1024-15TJC
AS7C1024-15TPC
AS7C1024-20JC
UM61256AK-15
UM61256ak sram
um61256ck-20
HY62256ALP10
XL93LC46AP
w24m257
GVT7164D32Q-6
km62256blg-7
w24m257ak-15
UM61256
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BT1603
Abstract: B1149 VT23-VT24 TCXO Quartz oscillator compensated 10 MHz 25MHZ, 10PPM, 18PF, 30PPM CRYSTAL-QUARTZ 6.000 MHZ HC-49 VT13-VT14 BT1602T bta16 e50p
Text: 2009/ 2010 FREQUENCY CONTROL PRODUCTS CATALOG SEE THE FUTURE OF FREQUENCY CONTROLS www.bfc-inc.com www.brookdale.com 81G East Jefryn Blvd. Deer Park, NY 11729 www.bfc-inc.com | Toll Free: 800-229-8033 / 631-242-8033| Fax: 631-595-1845 Table of Contents Quartz Crystals
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768kHz
BFC32
BFC42
BFC53
BFC64
BFC64B
BT1603
B1149
VT23-VT24
TCXO Quartz oscillator compensated 10 MHz
25MHZ, 10PPM, 18PF, 30PPM
CRYSTAL-QUARTZ 6.000 MHZ HC-49
VT13-VT14
BT1602T
bta16
e50p
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131.D72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
D72-WORD
TC558128BJ/BFT
576-bit
SOJ32-P-4QO-1
38MAX
32-P-400-0
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
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TC551664BJ/BFT-12
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
SOJ44-P-400-1
44-P-400-0
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tc551664aj-12
Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
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TC551664BJ/BFT-12
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
SOJ44-P-4QO-1
44-P-400-0
tc551664aj-12
SOJ44-P-400-1
TC551664AJ-15
TC551664BJ
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SOJ32-P-400-1
Abstract: TC55V8128BJ
Text: T O S H IB A TENTATIVE TC55V8128BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V8128BJ/BFT-10
072-WORD
TC55V8128BJ/BFT
SOJ32-P-4QO-1
32-P-400-0
SOJ32-P-400-1
TC55V8128BJ
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SOJ32-P-400-1
Abstract: TC558128BJ
Text: T O S H IB A TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
372-WORD
TC558128BJ/BFT
576-bit
SQJ32-P-400-1
38MAX
32-P-400-0
SOJ32-P-400-1
TC558128BJ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
072-WORD
TC558128BJ/BFT
576-bit
SOJ32-P-400-1
32-P-400-0
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Serial Input 16-Bit 4-2 0 mA, 0-20 mA DAC □ AD420 FEATURES 4 -20 mA, 0-20 mA or 0-24 mA Current Output 16-Bit Resolution and Monotonicity ±0.012% max Integral Nonlinearity ±0.05% max Offset Trimmable ±0.15% max Total Output Error (Trimmable)
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16-Bit
AD420
16-Bit
24-Pin
AD420
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
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TC551664BJ/BFT-12
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
SOJ44-P-400-1
44-P-400-0
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536
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TC551664
BJ/BFT-15
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
SOJ44-P-400-1
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TC558128BJ
Abstract: No abstract text available
Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
072-WORD
TC558128BJ/BFT
576-bit
SOJ32-P-400-1
32-P-400-0
67TYP
TC558128BJ
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
072-WORD
TC558128BJ/BFT
576-bit
TC558128BJ/BFTremain
SOJ32-P-400-1
21-36MAX
32-P-400-0
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A526
Abstract: No abstract text available
Text: TO SH IB A TC55V328BJ/B FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V328BJ/BFT is a 262,144-bit high-speed static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed and
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TC55V328BJ/B
FT-12
768-WORD
TC55V328BJ/BFT
144-bit
SOJ28-P-300-1
TC55V328BJ/BFT-12
28-P-0
A526
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Untitled
Abstract: No abstract text available
Text: SP8852E M ITEL 2 7GHz Parallel Load Professional Synthesiser Preliminary Information SE M IC O N D U C T O R Supersedes January 1996 version, DS4237 - 1.2 DS4237 - 2.0 The SP8852E is one of a family of parallel load synthesisers containing all the elem ents apart from the loop am plifier to
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SP8852E
DS4237
SP8852E
SP8854E
16-bit
SP8855E
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ADC4344M
Abstract: ADC34344
Text: ADC4344/ADC4345 Very High Speed, 16-Bit, 1 MHz and 500 kHz Sampling A/D Converters With Built-in Sampie-and-Hold Amplifiers Description The ADC4344 and ADC4345 are complete 16-bit, 1 MHz and 500 kHz A/D converter subsystems with a built-in sample-and-hold amplifier in a
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ADC4344/ADC4345
16-Bit,
ADC4344
ADC4345
8IT11
BIT13
BFT15
BIT10
ADC4344M
ADC34344
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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TC551664AJ-12
Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it
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TC551664BJ/BFT-12
536-WORD
16-BIT
TC551664BJ/BFT
576-bit
44-P-400-0
TC551664AJ-12
SOJ44-P-400-1
TC551664AJ-15
TC551664BJ
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC55V8128BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V8128BJ/BFT-10
072-WORD
TC55V8128BJ/BFT
32-pfied
SOJ32-P-400-1
21-36MAX
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Untitled
Abstract: No abstract text available
Text: DEC 21 ¡992 SMC91C90 STANDARD MICROSYSTEMS CORPORATION i ADVANCE INFORMATION COMPONENT PRODUCTS DIVISION 80 Artov Drive. Hauccauge. NY 11788 1516 435-6000 Fax 1516) 231-6004 Single-Chip Ethernet Controller FEATURES Single-Chip Ethernet Controller Supports IEEE 8 02.3 ANSI 8802-3) and
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SMC91C90
10BASE-T
16-Bit
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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SOJ44-P-400-1
Abstract: A1400 TC55V1664BFT
Text: TOSHIBA TENTATIVE TC55V1664BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
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TC55V1664BJ/BFT-10
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-4QO-1
44-P-400-0
SOJ44-P-400-1
A1400
TC55V1664BFT
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M5M82C37AP-5
Abstract: m5m82c37 M5L8085ap 5L8085 M5L8085A
Text: M ITSU BISH I LSIs M5M82C37AP-5/FP-5/J-5 CMOS PROGRAMMABLE DMA CONTROLLER DESCRIPTION The M 5 M 8 2 C 3 7 A P -5 is a prog ram m able 4-ch an n e l D M A D ire c t M e m o ry A cc e s s controller. This d e v ic e Is s pecially d e s ig n e d to sim plify data transfer at high transfer rate for
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M5M82C37AP-5/FP-5/J-5
M5M82C37AP-5
m5m82c37
M5L8085ap
5L8085
M5L8085A
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