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    BFT15 Search Results

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    BFT15 Price and Stock

    American Electrical Inc JB-FT15.

    JUNCTION BOX PLAS 6.3"L X 3.15"W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey JB-FT15. Box 9 1
    • 1 $77.9
    • 10 $77.9
    • 100 $58.9376
    • 1000 $58.9376
    • 10000 $58.9376
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    Tri-Mag Inc GBFT-15

    INTERCONNECT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GBFT-15 Bulk 200
    • 1 -
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    • 100 -
    • 1000 $12.35
    • 10000 $12.35
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    American Electrical Inc JB-FT15

    Junction Box, 15 feed-through terminals;top entry;spring clamp;NEMA 4X enclosure | American Electrical Inc. JB-FT15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JB-FT15 Bulk 3 Weeks 1
    • 1 $87.21
    • 10 $74.13
    • 100 $67.15
    • 1000 $67.15
    • 10000 $67.15
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    Toshiba America Electronic Components TC551664BFT-15

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC551664BFT-15 2
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    Vishay Intertechnologies BFT-15M0-3%

    RES,CARBON FILM,15MEGOHMS,3%,6WATT,RADIAL LUGS,HIGH VOLTAGE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFT-15M0-3% 5
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    BFT15 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFT15 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFT15 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFT15 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BFT15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    BT1603

    Abstract: B1149 VT23-VT24 TCXO Quartz oscillator compensated 10 MHz 25MHZ, 10PPM, 18PF, 30PPM CRYSTAL-QUARTZ 6.000 MHZ HC-49 VT13-VT14 BT1602T bta16 e50p
    Text: 2009/ 2010 FREQUENCY CONTROL PRODUCTS CATALOG SEE THE FUTURE OF FREQUENCY CONTROLS www.bfc-inc.com www.brookdale.com 81G East Jefryn Blvd. Deer Park, NY 11729 www.bfc-inc.com | Toll Free: 800-229-8033 / 631-242-8033| Fax: 631-595-1845 Table of Contents Quartz Crystals


    Original
    PDF 768kHz BFC32 BFC42 BFC53 BFC64 BFC64B BT1603 B1149 VT23-VT24 TCXO Quartz oscillator compensated 10 MHz 25MHZ, 10PPM, 18PF, 30PPM CRYSTAL-QUARTZ 6.000 MHZ HC-49 VT13-VT14 BT1602T bta16 e50p

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131.D72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC558128BJ/BFT-12 D72-WORD TC558128BJ/BFT 576-bit SOJ32-P-4QO-1 38MAX 32-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    SOJ32-P-400-1

    Abstract: TC55V8128BJ
    Text: T O S H IB A TENTATIVE TC55V8128BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    PDF TC55V8128BJ/BFT-10 072-WORD TC55V8128BJ/BFT SOJ32-P-4QO-1 32-P-400-0 SOJ32-P-400-1 TC55V8128BJ

    SOJ32-P-400-1

    Abstract: TC558128BJ
    Text: T O S H IB A TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


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    PDF TC558128BJ/BFT-12 372-WORD TC558128BJ/BFT 576-bit SQJ32-P-400-1 38MAX 32-P-400-0 SOJ32-P-400-1 TC558128BJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan
    PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit SOJ32-P-400-1 32-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Serial Input 16-Bit 4-2 0 mA, 0-20 mA DAC □ AD420 FEATURES 4 -20 mA, 0-20 mA or 0-24 mA Current Output 16-Bit Resolution and Monotonicity ±0.012% max Integral Nonlinearity ±0.05% max Offset Trimmable ±0.15% max Total Output Error (Trimmable)


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    PDF 16-Bit AD420 16-Bit 24-Pin AD420

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan
    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


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    PDF TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1

    TC558128BJ

    Abstract: No abstract text available
    Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan
    PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit SOJ32-P-400-1 32-P-400-0 67TYP TC558128BJ

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan
    PDF TC558128BJ/BFT-12 072-WORD TC558128BJ/BFT 576-bit TC558128BJ/BFTremain SOJ32-P-400-1 21-36MAX 32-P-400-0

    A526

    Abstract: No abstract text available
    Text: TO SH IB A TC55V328BJ/B FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V328BJ/BFT is a 262,144-bit high-speed static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed and


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    PDF TC55V328BJ/B FT-12 768-WORD TC55V328BJ/BFT 144-bit SOJ28-P-300-1 TC55V328BJ/BFT-12 28-P-0 A526

    Untitled

    Abstract: No abstract text available
    Text: SP8852E M ITEL 2 7GHz Parallel Load Professional Synthesiser Preliminary Information SE M IC O N D U C T O R Supersedes January 1996 version, DS4237 - 1.2 DS4237 - 2.0 The SP8852E is one of a family of parallel load synthesisers containing all the elem ents apart from the loop am plifier to


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    PDF SP8852E DS4237 SP8852E SP8854E 16-bit SP8855E

    ADC4344M

    Abstract: ADC34344
    Text: ADC4344/ADC4345 Very High Speed, 16-Bit, 1 MHz and 500 kHz Sampling A/D Converters With Built-in Sampie-and-Hold Amplifiers Description The ADC4344 and ADC4345 are complete 16-bit, 1 MHz and 500 kHz A/D converter subsystems with a built-in sample-and-hold amplifier in a


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    PDF ADC4344/ADC4345 16-Bit, ADC4344 ADC4345 8IT11 BIT13 BFT15 BIT10 ADC4344M ADC34344

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


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    PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V8128BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    PDF TC55V8128BJ/BFT-10 072-WORD TC55V8128BJ/BFT 32-pfied SOJ32-P-400-1 21-36MAX

    Untitled

    Abstract: No abstract text available
    Text: DEC 21 ¡992 SMC91C90 STANDARD MICROSYSTEMS CORPORATION i ADVANCE INFORMATION COMPONENT PRODUCTS DIVISION 80 Artov Drive. Hauccauge. NY 11788 1516 435-6000 Fax 1516) 231-6004 Single-Chip Ethernet Controller FEATURES Single-Chip Ethernet Controller Supports IEEE 8 02.3 ANSI 8802-3) and


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    PDF SMC91C90 10BASE-T 16-Bit

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    SOJ44-P-400-1

    Abstract: A1400 TC55V1664BFT
    Text: TOSHIBA TENTATIVE TC55V1664BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


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    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 A1400 TC55V1664BFT

    M5M82C37AP-5

    Abstract: m5m82c37 M5L8085ap 5L8085 M5L8085A
    Text: M ITSU BISH I LSIs M5M82C37AP-5/FP-5/J-5 CMOS PROGRAMMABLE DMA CONTROLLER DESCRIPTION The M 5 M 8 2 C 3 7 A P -5 is a prog ram m able 4-ch an n e l D M A D ire c t M e m o ry A cc e s s controller. This d e v ic e Is s pecially d e s ig n e d to sim plify data transfer at high transfer rate for


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    PDF M5M82C37AP-5/FP-5/J-5 M5M82C37AP-5 m5m82c37 M5L8085ap 5L8085 M5L8085A