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    BFR91 TRANSISTOR Search Results

    BFR91 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFR91 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BFR91

    Abstract: transistor c 2316 BFR91 BFR91 transistor
    Text: BFR91 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91 Marking: BFR91 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base


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    PDF BFR91 BFR91 D-74025 17-Apr-96 transistor BFR91 transistor c 2316 BFR91 transistor

    BFR91

    Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
    Text: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and


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    PDF BFR91 BFR91 KT-29 24max TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45

    BFR91

    Abstract: transistor BFR91 BFR91 transistor marking amplifier j02
    Text: BFR91 Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


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    PDF BFR91 BFR91 D-74025 20-Jan-99 transistor BFR91 BFR91 transistor marking amplifier j02

    Untitled

    Abstract: No abstract text available
    Text: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


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    PDF BFR91 BFR91 D-74025 24-Aug-04

    RF TRANSISTOR 2.5 GHZ

    Abstract: TO50 transistor
    Text: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


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    PDF BFR91 BFR91 D-74025 08-Sep-04 RF TRANSISTOR 2.5 GHZ TO50 transistor

    BFR91

    Abstract: transistor BFR91
    Text: BFR91 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


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    PDF BFR91 BFR91 D-74025 20-Jan-99 transistor BFR91

    BFR91

    Abstract: No abstract text available
    Text: BFR91 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


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    PDF BFR91 BFR91 D-74025 31-Oct-97

    transistor BFR91

    Abstract: BFR91
    Text: BFR91 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


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    PDF BFR91 BFR91 D-74025 20-Jan-99 transistor BFR91

    BFR91 transistor

    Abstract: BFR91 transistor BFR91 marking amplifier j02
    Text: BFR91 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency


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    PDF BFR91 BFR91 D-74025 20-Jan-99 BFR91 transistor transistor BFR91 marking amplifier j02

    2N4427 equivalent bfr91

    Abstract: BFR91 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA


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    PDF BFR91 BFR91G 2N4427 equivalent bfr91 BFR91 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607

    BFR91

    Abstract: Transistor BFR 90 application transistor BFR91
    Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50


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    PDF BFR91 D-74025 Transistor BFR 90 application transistor BFR91

    transistor BFR91

    Abstract: BFR91 transistor BFR91 RF TRANSISTOR 2.5 GHZ s parameter
    Text: BFR91 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2


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    PDF BFR91 2002/95/EC 2002/96/EC 08-Apr-05 transistor BFR91 BFR91 transistor BFR91 RF TRANSISTOR 2.5 GHZ s parameter

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA


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    PDF BFR91 BFR91G MRF607 2N6255 2N5179

    Untitled

    Abstract: No abstract text available
    Text: BFR91 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2


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    PDF BFR91 2002/95/EC 2002/96/EC BFR91 D-74025 29-Apr-05

    BFR91

    Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz


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    PDF BFR91 Vdc00 MRF571 BFR90 MRF545 MRF544 MSC1308 BFR91 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607

    bfr91

    Abstract: No abstract text available
    Text: BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz typ @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz • High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz


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    PDF BFR91 MRF545 MRF544 bfr91

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz


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    PDF BFR91 MRF545 MRF544

    transistor MAR 543

    Abstract: transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439
    Text: Temic BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • • • High power gain Low noise figure High transition frequency BFR91 Marking: BFR91


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    PDF BFR91 BFR91 24-Mar-97 transistor MAR 543 transistor BFR91 IPS240 BFR91 transistor transistor mar 839 Telefunken u 439 transistor MAR 439

    bfr91 vishay

    Abstract: No abstract text available
    Text: _ BFR91 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.


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    PDF BFR91 BFR91 20-Jan-99 bfr91 vishay

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


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    PDF BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial


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    PDF 0D31815 BFR91 BFR91/02 ON4186)

    bfr91

    Abstract: No abstract text available
    Text: TEMIC BFR91 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain •


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    PDF BFR91 BFR91 D-74025 31-Oct-97

    transistor BFR91

    Abstract: BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530
    Text: Philips Semiconductors bb53^31 0 0 3 1 Ô1 5 4 T5 M APX Product specification NPN 5 GHz wideband transistor ^ ^ BFR91 b'iE T> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial


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    PDF BFR91 ON4186) BFQ23. BFR91/02 Q031fl1^ transistor BFR91 BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530

    BFR91

    Abstract: BFR91 philips transistor BFR91 BFR91 transistor BFR91 NPN 6 GHz Wideband Transistor BFQ23
    Text: Philips Semiconductors Product specification '7 = - 3 /- /7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFR91 Sh E J> 7 1 1 0 0 5 k 004.5704 T^O M P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily Intended for use in RF amplifiers such as in aerial


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    PDF BFR91 ON4186) BFQ23. 711062L, BFR91/02 711Qfl2b DQMS70Ã BFR91 philips transistor BFR91 BFR91 transistor BFR91 NPN 6 GHz Wideband Transistor BFQ23