phototransistor 650 nm
Abstract: phototransistor visible light C660 phototransistor peak 550 nm
Text: •I bfl02245 DD002B1 OPTO TECHNOLOGY OPTO TECHNOLOGY 4 M IOTI INC 42E J> - " T - M l - T l , REFLECTIVE SWITCH T Y P E OTR 6 6 0 Features ■ Visible LED C660 nM ■ Phototransistor ■ Low cost plastic housing Description Dpto Technology's OTR 660 Re
|
OCR Scan
|
PDF
|
DD002B1
phototransistor 650 nm
phototransistor visible light
C660
phototransistor peak 550 nm
|
PHOTODIODE 708
Abstract: br A 708
Text: • bfl02245 000014? 7 IOTI OPTO TECHNOLOGY INC 42E T> Ml-3/ OPTO TECHNOLOGY PN SILICON PHOTODIODE T Y P E OT 4 2 3 Features ■ Low co st ■ High speed ■ T-1 plastic package Description Opto Technology's OT 4 2 3 con s is ts of a PN junction silicon
|
OCR Scan
|
PDF
|
bfl02245
PHOTODIODE 708
br A 708
|
opto npn
Abstract: photo darlington sensor
Text: •I bflOZBMS D 0 0 0 1 4 1 OPTO TECHNOLOGY b IOTI INC 4¡BE J> q - - U l - OPTO TECHNOLOGY ^ 3 N P N SILICON PHOTODARLINGTON T Y P E OT 411 Features ■ Miniature photodarlington ■ Hermetically sealed package ■ High sensitivity Description Opto Technology's OT 411 sen
|
OCR Scan
|
PDF
|
D000141
0T411L
0T411
Ratings141
opto npn
photo darlington sensor
|
br A 708
Abstract: No abstract text available
Text: •I bôOESMS DDDD21S OPTO TECHNOLOGY ‘i M O T I INC 42E OPTO TECHNOLOGY REFLECTIVE SWITCH TYPE OTR 636 Features ■ Photodarlington ■ Low c o s t plastic housing ■ High gain Description □ p to Technology's OTR 63B reflective sensors combine a gallium arsenide infrared emit
|
OCR Scan
|
PDF
|
DDD21S
562CHADDICK
IL60090
br A 708
|