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    Siemens BF966

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    BF966 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF966 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF966 Unknown Cross Reference Datasheet Scan PDF
    BF966 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF966 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF966 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF966 Telefunken Electronic N-Channel Dual Gate MOS Field Effect Tetrode - Depletion Mode Scan PDF
    BF966S Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF966S Siemens Cross Reference Guide 1998 Original PDF
    BF966S Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF966S Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
    BF966S Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF966S Unknown Cross Reference Datasheet Scan PDF
    BF966S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF966S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF966S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF966S Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF966SA Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF966SA Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
    BF966SB Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF966SB Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF

    BF966 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF966S

    Abstract: BF966SA BF966SB
    Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original     		PDF BF966S BF966S D-74025 23-Jan-97 BF966SA BF966SB

    BF966

    Abstract: No abstract text available
    Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S BF966S D-74025 20-Aug-04 BF966

    TO50 package

    Abstract: BF966 BF966S
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966

    2804SLS2

    Abstract: BF966 BF966S BF966SA BF966SB
    Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF966S BF966S D-74025 20-Jan-99 2804SLS2 BF966 BF966SA BF966SB

    BF966S

    Abstract: BF966SA BF966SB 0V128
    Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB 0V128

    BF966

    Abstract: BF966S BF966SA BF966SB
    Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance


    Original     		PDF BF966S BF966S D-74025 23-Jan-97 BF966 BF966SA BF966SB

    BF966SA

    Abstract: BF966S BF966 BF966SB TO50 package MA1300
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original     		PDF BF966S BF966SA BF966SB BF966SA BF966S D-74025 BF966 BF966SB TO50 package MA1300

    Untitled

    Abstract: No abstract text available
    Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S BF966S D-74025 20-Aug-04

    BF966

    Abstract: No abstract text available
    Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S BF966S D-74025 03-Sep-04 BF966

    40673 MOSFET

    Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E


    Original     		PDF BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET

    BF966S

    Abstract: BF966SA BF966SB
    Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original     		PDF BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB

    BF966S

    Abstract: BF966 BF966SA BF966SB TO50 package
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original     		PDF BF966S 2002/95/EC 2002/96/EC 08-Apr-05 BF966S BF966 BF966SA BF966SB TO50 package

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    BF966S

    Abstract: transistor BG 23
    Text: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF 711002b BF966S 7Z80878 0Db754fci BF966S transistor BG 23

    dual-gate

    Abstract: BF966S
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package


    OCR Scan     		PDF BF966S dual-gate BF966S

    dual-gate

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF966S dual-gate

    Untitled

    Abstract: No abstract text available
    Text: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF966S BF966S 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF BF966S bbS3331 003ST36

    BF966

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF bbS3T31 aQ12c BF966 BF966

    BF966S

    Abstract: No abstract text available
    Text: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes


    OCR Scan     		PDF BF966S BF966S 23-Jan-97

    transistor BG 23

    Abstract: BF966S
    Text: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,


    OCR Scan     		PDF BF966S transistor BG 23 BF966S

    buz90af

    Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
    Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391


    OCR Scan     		PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163

    CFY19

    Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200


    OCR Scan     		PDF E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14

    BFT97

    Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
    Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages


    OCR Scan     		PDF BF199 BF240 BF241 BF254 BF255 BF414 BF420 BF420L BF421 BF421L BFT97 Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A BFR96S