BF12 Search Results

Low Capacitance MOS FET 13005

Abstract: BF1205C
Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

052-101

Contextual Info: 052-101 7-Port Unmanaged Ethernet Switch 10/100/1000 BASE-T With Series 805 Mighty Mouse Connector REV A B DESCRIPTION Initial Release Per DCN 52458 BF12U2-1671 DATE 8/11/2014 10/7/2014 APPROVED MF RAS THIS COPYRIGHTED DOCUMENT IS THE PROPERTY OF GLENAIR, INC. AND IS FURNISHED ON THE CONDITION THAT IT IS NOT TO

HD66750

Abstract: BF128128A HD6675 4R10
Contextual Info: BO LYMIN BF128128A Feature 1. FSTN Transflective LCD, COF package 2. Built-in driver HD66750 3. 1/128 duty cycle 4. +3V single power supply 5. Option: temperature compensation Dimension 0.6Max Symbol Condition Typical Unit Value Input Voltage Vdd Vdd = +3V 3.0

Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

BF1208

Abstract: transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810
Contextual Info: 66 SO T6 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1

hg1b

Abstract: marking 822 sot363
Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

TRANSISTOR BF1204

Abstract: BF1204
Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363

Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

Contextual Info: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current

Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

br 8764

Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Contextual Info: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

BF1212R datasheet

Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer

Contextual Info: BF127 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)25m Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BF120 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)220 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1 3 2 6 5 4 7 8 Global Connector Technology Ltd. - BF120: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT, DUAL ENTRY A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值 : 2 AMP Ordering Grid INSULATOR RESISTANCE 绝缘电阻值 : 1000 MEGOHMS MIN.

097.176

Abstract: bs 3676 BF1208D b4102
Contextual Info: BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1

Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

DUAL-GATE

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

00941

Abstract: BF1205
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

BF1203

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

bf1216

Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Contextual Info: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization

K 2611 MOSFET

Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
Contextual Info: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.