BE 187 TRANSISTOR Search Results

DG180-191

Contextual Info: DG180-191 fffl HARRIS S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channel junction-type field-effect transistors JFET designed to function as electronic switches. Level-shifting

TRANSISTOR 187

Abstract: transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR ON 4673 187 transistor configuration+bel+187+transistor TRANSISTOR d 718
Contextual Info: TRANSISTOR MICA INSULATORS ke ye lco .com • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree celsius per inch in

Contextual Info: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in

TRANSISTOR 187

Contextual Info: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in

OG191

Contextual Info: 43E D HARRIS SEMICOND SECTOR 4302271 GOB.bbflS 1 Hi HAS £B H A R R I S V A / D G 1 8 0 -1 9 1 S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog gates consist of 2 or 4 N-channei junction-type field-effect transistors JFET

G-184

Contextual Info: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting

Contextual Info: Low Saturation Voltage Switching Transistors LSV series E -p a c k IT O -2 2 0 S M D B ip o la r tra n s is to rs A b s o lu te M a x im u m R a tin g s E le c tric a l C h a ra c te ris tic s VcEO Pt Tstg Tj [°C ] PC] flFE (s u s ) V cE V be (s a t) (s a t)

Contextual Info: M60 Section 6 FREV2 11/23/11 12:09 PM Page 110 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter

transistor p86

Contextual Info: M55 Sect 6 p86-103 m 10/13/06 7:27 PM Page 101 SOCKETS FOR T0-5 & TO-100 “MINI” HALOGEN LAMP SOCKETS Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 .41 to .020 (.51) diameter leads or .010 (.25) x

Transistor AC 187

Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind

CIL TRANSISTOR 188

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

CIL TRANSISTOR 188

Abstract: CIL TRANSISTOR 187 CIL TRANSISTOR 331 CIL187 CIL188
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188

CIL TRANSISTOR 188

Abstract: CIL TRANSISTOR 187 CIL188 CIL TRANSISTOR 331 CIL187 CIL TRANSISTOR CIL 331 transistor a 92 a 331
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

a 4x transistor

Abstract: IGBT modul
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG SCP-3511 HALF-BRIDGE IGBT MODUL • • • • HIGHCURENT HIGH RELIABILITY LOW THERMAL RESISTANCE HIGH SURGE CURRENT N-CHANNEL, HALF-BRIDGE INSULATED GATE BIPOLAR TRANSISTOR IGBT ENCLOSED IN HERMETIC PACKAGE.

Contextual Info: Power Transistor Sockets Heavy duty, fully insulated transistor sockets, TO-3 style, are molded of UL approved glass filled polyester and can be supplied with printed circuit or panel mount saddles. Spring brass or phosphor bronze contacts are available with brite tin, electro tin or gold plating. Molded bosses in casting eliminate the need for

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

55D8

Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Contextual Info: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting

MM54C32

Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 10/19/95 Last Update Date: 05/19/97 Last Major Revision Date: 04/02/97 MNMM54C32-X REV 1A0 QUAD 2-INPUT OR GATE General Description Employing complementary MOS CMOS transistors to achieve low power and high noise margin,

boitier to 126

Abstract: l14oc BF 914 2n 693 2N706 ESM 470
Contextual Info: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §

BUK7628-100A

Abstract: BUK7528-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

transistor 373

Abstract: 8060 transistor
Contextual Info: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,