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    BDY58 Search Results

    BDY58 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDY58 Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original PDF
    BDY58 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175 Original PDF
    BDY58 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY58 Unknown Transistor Replacements Scan PDF
    BDY58 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDY58 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDY58 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY58 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDY58 SGS-Thomson Transistor Datasheet Scan PDF
    BDY58 Solitron Devices Pro Electron Power Transistors Scan PDF
    BDY58 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BDY58 Thomson-CSF Power Transistor Data Book 1975 Scan PDF
    BDY58 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDY58A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=125 / Ic=25 / Hfe=20-60 / fT(Hz)=7M / Pwr(W)=175 Original PDF
    BDY58B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    BDY58C Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    BDY58R Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY58R Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDY58R Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDY58S Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF

    BDY58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDY57

    Abstract: BDY58
    Text: Inchange Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current capability ・Fast switching speed APPLICATIONS ・For use in low frequency large signal power amplifications PINNING See Fig.2


    Original     		PDF BDY57 BDY58 BDY57 10MHz BDY58

    BDY58

    Abstract: BDY57
    Text: SavantIC Semiconductor Product Specification BDY57 BDY58 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING See Fig.2


    Original     		PDF BDY57 BDY58 BDY57 10MHz BDY58

    BDY58S

    Abstract: No abstract text available
    Text: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58S O204AA) 31-Jul-02 BDY58S

    BDY58B

    Abstract: No abstract text available
    Text: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58B O204AA) 31-Jul-02 BDY58B

    BDY58C

    Abstract: No abstract text available
    Text: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58C O204AA) 31-Jul-02 BDY58C

    Untitled

    Abstract: No abstract text available
    Text: BDY58R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BDY58R Freq48M eq48M

    Untitled

    Abstract: No abstract text available
    Text: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58A O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF BDY58B

    Untitled

    Abstract: No abstract text available
    Text: BDY58A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58A O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58S O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58B O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58C O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF BDY58A

    BDY58

    Abstract: BDY57 Comset
    Text: BDY57 – BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current


    Original     		PDF BDY57 BDY58 BDY58 BDY57 Comset

    Untitled

    Abstract: No abstract text available
    Text: BDY58 MECHANICAL DATA Dimensions in mm HIGH CURRENT NPN SILICON TRANSISTOR 4 0 .0 1 1 .5 7 5 M a x . FEATURES 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )


    Original     		PDF BDY58 10MHz

    Untitled

    Abstract: No abstract text available
    Text: BDY58B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58B O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDY58C Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58C O204AA) 18-Jun-02

    bdy58s

    Abstract: No abstract text available
    Text: BDY58S Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDY58S O204AA) 16-Jul-02 bdy58s

    Untitled

    Abstract: No abstract text available
    Text: BDY58 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V)160 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BDY58 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: BDY58C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125 V(BR)CBO (V) I(C) Max. (A)25 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF BDY58C

    Transistor bdy 58

    Abstract: Tektronix 7603 BDY58 emetteur Tektronix
    Text: NPN SILIC O N TR A N S IS TO R S , D IF F U S E D MESA DUT J / BDY58 TR A N S IS TO R S NPN S IL IC IU M , M ESA D IF F U S E S LF large signal power amplification A m p lific a tio n B F grands signaux de puissance 8 0 V \ 125 V V CEO High current fast switching


    OCR Scan     		PDF BDY58 CB-19 Transistor bdy 58 Tektronix 7603 BDY58 emetteur Tektronix

    bdy58

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON Deæi[LIOro iDOi BDY58 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDY58 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case. It is intended for use in switching and linear applications in


    OCR Scan     		PDF BDY58 BDY58

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


    OCR Scan     		PDF BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36