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    BDW 36 Search Results

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    BDW 36 Price and Stock

    Amphenol ProLabs SFP-1GB-DW36-80-C

    MSA and TAA Compliant 1000Base-D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-1GB-DW36-80-C 1
    • 1 $562.5
    • 10 $562.5
    • 100 $534.375
    • 1000 $562.5
    • 10000 $562.5
    Buy Now

    Amphenol ProLabs XFP-10GB-DW36-80-C

    MSA and TAA Compliant 10GBase-DW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XFP-10GB-DW36-80-C 1
    • 1 $1000
    • 10 $1000
    • 100 $950
    • 1000 $1000
    • 10000 $1000
    Buy Now

    Amphenol ProLabs SFP-10GB-DW36-80-C

    MSA and TAA Compliant 10GBase-DW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-10GB-DW36-80-C 1
    • 1 $875
    • 10 $875
    • 100 $831.25
    • 1000 $875
    • 10000 $875
    Buy Now

    Amphenol ProLabs QSFP-100GB-DW36-N1-C

    Alcatel-Lucent Nokia Compatible
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QSFP-100GB-DW36-N1-C 1
    • 1 $9375
    • 10 $9375
    • 100 $8906.25
    • 1000 $9375
    • 10000 $9375
    Buy Now

    Amphenol ProLabs SFP-2-5GB-DW36-120-C

    MSA and TAA 2500Base-DWDM SFP Tr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-2-5GB-DW36-120-C 1
    • 1 $4125
    • 10 $4125
    • 100 $3918.75
    • 1000 $4125
    • 10000 $4125
    Buy Now

    BDW 36 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDW36 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDW36 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDW36 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF

    BDW 36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AC-DC CSF50-D Features: • • • • • • • • 50 Watt Dual Output Inrush current limit Short circuit protection Over voltage protection CH1 isolated from CH2, 3 Over current protection Up to 5 year warranty CSF15-D SPECIFICATIONS: MODEL CSF50-BDW


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    PDF CSF50-D CSF15-D CSF50-BDW CSF50-BHW CSF50-DDW CSF50-EEW AC100-240V DC120 50/60Hz 440Hz)

    BDW420

    Abstract: BDW42-D
    Text: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW 42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. • • • • • BDW 47* High DC Current Gain - hpE = 2500 typ. @ Iq = 5.0 Adc.


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    PDF BDW42/D BDW46 42/BDW -220A BDW420 BDW42-D

    bipolar power transistor

    Abstract: BDW42 BDW47 motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW 47* • • High DC Current Gain - hpE = 2500 typ. @ lc = 5.0 Adc. Collector Emitter Sustaining Voltage @ 30 mAdc:


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    PDF BDW46 BDW42/BDW47 O-220AB BDW46 BDW42 BDW47 bipolar power transistor motorola darlington power transistor 10 amp npn power transistors with low saturation voltage bdw41 BDW45 1N5825 transistor 3213 BDW40

    g3jc

    Abstract: No abstract text available
    Text: INSTR -COPTO} bE »F| flìtilTEh D03tiLll 62C 36611 ^§5T756~~TE>fS5 TRSTR 50P T0 ' T -3 3 -3 1 BDW24, BDW24A, BDW24B, BDW24C P-N-P SILICON POWER DARLINGTONS * RE V ISE D OC TO BER 1984 50 W at 25°C Case Temperature 6 A Continuous Collector Current Min hFE of 750 at 2 A, 3 V


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    PDF D03tiLll 5T756~ BDW24, BDW24A, BDW24B, BDW24C g3jc

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    BUX47A

    Abstract: BUX47 BUX47B BY205-400
    Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current


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    PDF 003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    BUX83

    Abstract: BUX82 gg3b
    Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current


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    PDF BUX82 BUX83 BUX83 gg3b

    1N914F

    Abstract: 1N814 texas instruments bdw BDW24 BDW24A BDW24B BDW24C
    Text: T EX A S IN ST R {O PTO } ^ 9 & Ì7 2 6 TEXAB bE TNSTR D F| a^t.lTSh □D3bbll 62C TOPTO 36611 D T-33-31 ' BDW24, BDW24A, BDW24B, BDW24C P-N-P SILICON POWER DARLINGTONS ' R E V IS E D O C T O B E R 1 9 8 4 50 W at 25°C Case Temperature 6 A Continuous Collector Current


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    PDF T-33-31 BDW24, BDW24A, BDW24B, BDW24C T0-220AB BDW24 BDW24A BDW24B BDW24C 1N914F 1N814 texas instruments bdw

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


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    PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    BD NPN transistors

    Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
    Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710


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    PDF O-126 BD NPN transistors BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442

    TRANSISTOR bd 147

    Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Com plem entary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47* • • High DC Current Gain - hFE = 2500 typ. @ lc = 5.0 Adc.


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    PDF BDW46 BDW42/BDW47 O-220AB BDW47 BDW45, TRANSISTOR bd 147 bdw 36 w41b BDW 38 npn darlington transistor 200 watts

    BD901

    Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
    Text: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current


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    PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 1N914 BD897A BD899 BD899A D03bt

    TRANSISTOR bd 147

    Abstract: BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45
    Text: MOTOROLA SC X S T R S /R F 7 ^ 3 3 -o *f MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA D ARLINGTON COMPLEMENTARY SILICO N POWER TRANSISTORS High DC Current Gain — hpg » 2500 typ. @ lc “ 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


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    PDF BDW39/BDW44 BDW40/BDW45 BDW41/BDW46 BDW42/BDW47 BDW43/BDW48 T0-220AB BDW39, BDW40, BDW41, BDW42, TRANSISTOR bd 147 BDW41 w44b BDW39 BDW40 800V PNP BDW48 LSE 0405 BDW44 BDW45

    Tektronix P6019

    Abstract: BUY70A p6020 175L BUY70B BUY70C P6019 P6042 t33 38 ice1a
    Text: TEXAS IN STR -COPTO} ^ 2 DËTJfiTblTab DOBtibag □ •096^1726 TEX A S ,• r '. C 62C 1NSTR O P TO 36683 D BUY70A, BUY70B, BUY70C N-P-N SILICON POWER TRANSISTORS ' T - 7 3 - / 3 O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4 • 75 W a t 25°C Case Temperature


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    PDF BUY70A, BUY70B, BUY70C BUY70A BUY70B BUY70C T-33-/3 Tektronix P6019 p6020 175L P6019 P6042 t33 38 ice1a

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    TIP29

    Abstract: BUX84 BUX85 lb102
    Text: TEXAS INSTR -COPTO} D F f i T b l 75 b QOHbbbT ti Ô 9 6 1 7 2 6 - TE XA S INSTR <OPTO) 62C 36669 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS ~ T - 3 3 '/ NOVEMBER 1 983 - REVISED OCTOBER 1984 40 W at 25°C Case Temperature 2 A Continuous Collector Current


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    PDF BUX84, BUX85 T0-22QAB BUX84 003bb73 BUX85 TIP29 lb102

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


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    tektronix p6019

    Abstract: ORP60
    Text: IN STR iO PTO J bE '8 9 6 1 7 2 6 T E X A S Q0 3 b b 7 S I N S T R ÎpPTO 62C 36675 BUY69A, BUY69B, BUY69C N-P-N SILICON POWER TRANSISTORS T -' 3 OCTOBER 198 2 - R EV ISED O CTOBER 1984 1 0 0 W a t 2 5 ° C C a s e Tem perature 10 A Continuous Collector Current


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    PDF BUY69A, BUY69B, BUY69C T-33-/3 tektronix p6019 ORP60

    BU326

    Abstract: BU326A BU326-BU326A
    Text: INSTR -COPTO} DE 0 0 3 t , t , a cl S Ô961726 TEXAS INSTR ~<OPTO> 62C 36629 r - i s - v BU326,BU326A N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 60 W at 2 5 °C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


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    PDF fliti75b 9e1726 BU326 BU326A BU326A 0d3fcjfci33 BU326, T-33-// BU326-BU326A

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    BD898

    Abstract: BD900 BD902 BD896 BD896A BD898A BD900A 7150A 562C
    Text: TEXAS IN STR - COP TOJ DDBLbDS 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 ' " > • 70 W a t 2 5 ° C Case Temperature • 8 A Continuous Collector Current T -3 3 -3 1 •


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    PDF BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T-33-31 O-22QAB BD896 BD898 BD900 BD898A BD900A 7150A 562C

    X53A

    Abstract: BDX63A
    Text: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current


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    PDF T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A

    bux81

    Abstract: BUX80
    Text: TEXAS INSTR {OPTO} 6961726 TE X A S b5 IN S TR DE IflTblTab 003bbS7 □ 62C <OPTO 3Ò657 BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS /- 7 3-/3 O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 1 5 0 W a t 2 5 ° C C ase T em p eratu re 1 0 A Continuous C ollector C urrent


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    PDF 003bbS7 BUX80 BUX81 BUX80, BUX81 T-33-/3