BD645 TRANSISTOR Search Results

BD648

Abstract: BD650 BD646 BD652
Contextual Info: SavantIC Semiconductor Product Specification BD646/648/650/652 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

BD649

Abstract: BD647 BD645 BD651 IC 651 PC 649
Contextual Info: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

BD648

Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

b0652

Abstract: BD648 BD652 bd650
Contextual Info: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature

BD645

Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

BD647

Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

darlington bd647

Abstract: TL 2262 lg bd645 tic 2260 BD649
Contextual Info: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

bd648

Abstract: bd652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BD646

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

transistor bd647

Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BD648

Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD645/646 Transistors Complementary Monolithic Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A)12.0 P(D) Max. (W)62 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

B0645

Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
Contextual Info: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

BD652

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

bd649

Abstract: BD651
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature