bd 825 10
Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,
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Q62702-D1135
Q62702-D149
Q62702-D1213
Q62702-D60
Q62702-D1305
Q62702-D1306
Q62702-D1113
Q62702-D1309
Q62702-D1310
Q62702-D1311
bd 825 10
SIEMENS BD 827-10
D1305
ti 829
IC 8256
bd 827-10
d1310
BD829
D1113
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828BD
Abstract: BD NPN transistors BD 826 NPN
Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60
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00142bQ
828BD
BD NPN transistors
BD 826 NPN
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transistors BC 543
Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,
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Q62702-D1303
Q62702-D13Q4
Q62702-D1179
Q62702-D1257
Q62702-D1307
Q62702-D1308
Q62702-D61
Q62702-D1312
Q62702-D1313
Q62702-D1238
transistors BC 543
BD 104 NPN
BC827
BD 104
transistors d 826
bc 734
82s83
BC 828
BD 541
bc825
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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BD135
BD136
BD137
BD138
BD139
BD140
BD142
BD144
BD157
BD158
JE350
je180
MJ13004
TP33C
BD325
JE172
BDX48
JE340
bd160
BUT55
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 4B8F8D7 BA123B4B !7B69D8 " C#$$4 B989B3%778 #7&B'& 4D9A 8F8D7 BA123B4B !7B69D8 " #$$4 B" *#$$4 " #$$4 C77777BD246A4E5
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1789AB2CDE7B37FD
989B3
C77777
246A4E5
A8917B2
B4356B2
7EB70B"
7B7C27
7BA79ED
1B35B123456B
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Untitled
Abstract: No abstract text available
Text: 1234567894ABCDEF69 1234567894ABCDEF69 12345627829A 2BCDEFF 4C45E57457DC7 234C25DC4E4E ! "F5#$ #$5 9%552& 17E '4C3F #%3 A48* 7CD45+4DCCBC5 4B4F565 A7"+ 7,C24 34 x × × × FEB2
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1234567894ABCDEF69
2345627829A
12345D
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Untitled
Abstract: No abstract text available
Text: 1234567894ABCDEF69 1234567894ABCDEF69 12345627839A2 2BCDEFF 4C45E57457DC7 234C25DC4E4E ! "F5# # $52% 17E &4C3F $6'3 A48 7CD45*4DCCBC5 4B4F565 A7"* 7+C24 "2734544 2B2C2,4
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1234567894ABCDEF69
12345627839A2
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PDF
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Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4B 7B69D8 !"#4 989B3$778 "7%&B& 4D9A !E8D9AB'B1A8DF9 78 BA123B4B 7B69D8 !"#4 1222223456789A8BC * - 7B123456.
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1789AB2CDE7B37FD
989B3
1222223456789A8BC
B123456
B0312B-
7BA79ED
B31B123456B
DE7B9AAB37
B31B123456B
D37EBD
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PDF
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yx 805 ic
Abstract: yx 801 yx 801 ic yx 805 Q5-250 transistor dk qe G2422 801 yx B0825 8I04
Text: %9A817*+;868+B/*6 2*C<?8< +D$$D !"#$$%&'( *+#$$+,-.+'/01&2034 5)60783+%99:;<=)+>=9?3*@ %)307860=1@ • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 ;*@7<0)60=1 '/*+!"#$$%&6()*+#$$+,-.+6/01&E034+=)60783+899&9<=)+4=9?3*@+
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9A817*
89G87
189G87
760A06
I92O62KH
yx 805 ic
yx 801
yx 801 ic
yx 805
Q5-250
transistor dk qe
G2422
801 yx
B0825
8I04
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PDF
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UGT-10
Abstract: cpclare ubd 550 UBD-550 UBD-600 UBD-650 UBD-750 UBD-850 UGT-15 UBD20 UNI-IMPS
Text: HIGH-SPEED TRANSIENT SURGE PROTECTORS UNI-IMPS DESCRIPTION CP Clare’s UNI-IMP high-speed transient surge protectors 0.55-20kV provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary
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55-20kV)
UBD-550
UBT-10
UGT-10
cpclare ubd 550
UBD-600
UBD-650
UBD-750
UBD-850
UGT-15
UBD20
UNI-IMPS
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N565
Abstract: C741 017A2 E5819
Text: @?85,A *;5:5*B.): 0)C6=56'*+$$+ !"#$$%&' )*+$*,-*&./,%0/1-2*34567)*!58)1),9:.%;/8/7/4, <=1:/(1)>)67*5,?*;)-=1:/(1)>)67 @(1/A5:/4,7 • ;<=>('5*&,:0,02& ■ ;<=>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ <*A$%$&1'-7,$%$#'0A$(52@'0&1 ;)7A6/(:/4, &.)*!"#$$%:'()*+$*,-*:./,%D/1-*D/1:)62*A4567)*E58)1),9:.%
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Original
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A4567)
4156/J5
1477K
G92O62JF
N565
C741
017A2
E5819
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 4 5 2 3 19 DI ST LOC R ES ER V ED . REVI SI ONS 95 BD DESCRIPTION K R E F O R MA T E D S REV PER 0G40-0257-99 01 JUL AH
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0G40-0257-99
BREK05KY
01-JUL-99
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S53A
Abstract: No abstract text available
Text: =;>:0? *<:6:*@.)6 1)A85:8'*B$$B !"#$$%&' )*#$$*+,-*&./0%1/23 4526/(2)7)89*:0;*<)3526/(2)7)89 =(2/?:6/J09 • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 <)9?8/(6/J0 &.)*!"#$$%6'()*#$$*+,-*6./0%C/23*3526/(2)7)89*D4EF9G*:0;*;)%
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6/J09
G92P62JK
S53A
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D1455
Abstract: k649 Z1506 NDK8 4948 ZN 424 ED42 45p6 Z9950
Text: @9 6/8/549'*?424*A1)2 7)B9;49'*C$$C !"#$$%&' )*#$*+,-*./012%31455)6*&1/5%7/68*7/62)9 :;62/(6)<)9=*45>*?)8;62/(6)<)9= O(6/D42/K5= • <=<>('5*&,:0,02& ■ <=<>7)*,$+(*+?+52.(:@%'0.%$"0&1 ■ =*A$%$&1'-7,$%$#'0A$(52@'0&1 ?)=D9/(2/K5 (
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6/D42/K5=
D1455
D1494D2
5/EK98
92/K5
24B/6/2
K649/-42/K5%
G92P62JK
k649
Z1506
NDK8
4948
ZN 424
ED42
45p6
Z9950
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PDF
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PK1001
Abstract: No abstract text available
Text: Global PartnerChip for System s on Silicon Siem ens A G Österreich Erdberger Lände 26 1030 Wien S t +43 -1-1707-35611 Fax (+43)1-1707-55973 Email: elisabeth.schwarz@siemens.at (AUS) Siem ens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vic. 3121
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400net
PK1001
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cke varistor
Abstract: No abstract text available
Text: SUPPRESSION BARE MOV DISCS – BD SERIES CKE Part Number Z60BD Series Z60BD391 Z60BD431 Z60BD471 Z60BD511 Z60BD621 Z60BD681 Z60BD751 Z60BD781 Z60BD821 Z60BD911 Z60BD951 Z60BD102 Z60BD112 Z60BD122 Z60BD142 Z60BD162 Z60BD182 Z60BD222 Z60BD272 Z60BD332 Z60BD392
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Z60BD
Z60BD391
Z60BD431
Z60BD471
Z60BD511
Z60BD621
Z60BD681
Z60BD751
Z60BD781
Z60BD821
cke varistor
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PDF
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B17C
Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051
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PK-41661-001
-41661-ANA102-*
-A2A102
-A3A102
-A4A102
-A5A102
-A6A102
-A7A102
-A8A102
-A9A102
B17C
4202 bd datasheet
BD 139 N
A13B
A5l102
A18E
48-7191
A17A
48-2210
AND501
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PDF
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k192a
Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188
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1SS154
1SS239
1SS241
1SS242
1SS268
1SS269
1SS271
1SS295
1SS312
1SS313
k192a
c2458
C2498
C2668
C2717
C1923 Y
C2499
k710
K241
C2995
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PDF
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1-1707-35611Fax
Abstract: No abstract text available
Text: Global PartnerChip for Systems on Silicon C5k Siemens AG Österreich Erdberger Lände 26 1030 Wien B + 43)-1-1707-35611 Fax (+43)-1 -1707-55973 C ^s) Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vic. 3121 8 ( 0 3 ) 4207111 02 30425
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B3414385
1-1707-35611Fax
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PDF
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k915
Abstract: No abstract text available
Text: Microwave Devices PRODUCT IDENTIFICATION TYPE D*bD*cD*d □*» □*« □ *a: Direction of circulation. Fill in with a letter A or B. A: CW clock-wise B: C.CW (counter clock-wise) □ *b: Bandwidth. Fill in with 1, 2, 3, 5 or 8. 1: Standard bandwidth 2, 3 and 5: Wide bandwidth
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BLE-002,
BLE-004
k915
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PDF
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MC100E156
Abstract: MC100E156FN MC100E156FNR2 MC10E156 MC10E156FN MC10E156FNR2 0180T
Text: MC10E156, MC100E156 5VĄECL 3ĆBit 4:1 MuxĆLatch The MC10E/100E156 contains three 4:1 multiplexers followed by transparent latches with differential outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output date is controlled by the multiplexer select controls (SEL0, SEL1). A logic
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MC10E156,
MC100E156
MC10E/100E156
MC10E156FN
r14525
MC10E156/D
MC100E156
MC100E156FN
MC100E156FNR2
MC10E156
MC10E156FN
MC10E156FNR2
0180T
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PDF
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Untitled
Abstract: No abstract text available
Text: Global PartnerChip for Systems on Silicon CD Siem ens A G Österreich Erdberger Lände 26 1030 Wien 8 <+43 1-1707-35611 Fax +43)-1-1707-55973 (AU S) Siem ens Ltd., Head Office 544- Church Street Richmond (Melbourne), Vic. 3121 8 (03)4207111 (SI 30425 Fax (03)4207275
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PDF
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Untitled
Abstract: No abstract text available
Text: RÊ25C I 8 2 0 □HM8 + / - 1 0 '/. P E G I G T ANCE MUUTIPUIEF: P T C : . 7 7. / G □ P E P A T I NG P A N E E ¡ - 55 TE 185 G 8 T E P A E E PANEE :- 6 5 TE 150 E THERMAE T I M E 8 8 N8 TANT : t , 0 5:88, MAX H I 8 8 1 F’A T I E N E E N E T A N T : 2 , 5 n W/ E MI N
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RG25C
125WG25
G12821R
QTG12
QTG12-22
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PDF
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CMM6003-SC
Abstract: CMM6003-SC-0G00 CMM6003-SC-0G0T PB-CMM6003-SC-0000 16550 smt
Text: 50-870 MHz High Dynamic Range Amplifier CMM6003-SC -BD March 2007 - Rev 13-Mar-07 Features Functional Block Diagram 50 to 870 MHz Frequency Range +41 dBm Output IP3 1.6 dB Noise Figure (@ 450 MHz) 17 dB Gain 22 dBm P1dB SOT-89 SMT Package Single Power Supply
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CMM6003-SC
13-Mar-07
OT-89
CMM6003-SC
CMM6003-SC-0G00
CMM6003-SC-0G0T
PB-CMM6003-SC-0000
16550 smt
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