BD 69 TRANSISTOR Search Results

BD 69 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BD 69 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-A	PDF
IB0810M100 Abstract: l-band 60 watt transistor x band radar U 855 D nc50 Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,	Original	IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-NC l-band 60 watt transistor x band radar U 855 D nc50	PDF
dell lcd 17 power supply diagram Abstract: DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors Text: IZ8057 MULTI MELODY GENERATOR WITH ACCOMPANEMENT DESCRIPTION The IZ8057 series is a CMOS LSI chip designed for use in advance clock products. It is designed to play the melodies according to previously programmed information. The IZ8057 is capable of generating songs	Original	IZ8057 IZ8057 dell lcd 17 power supply diagram DELL power supply diagram lcd dell power supply dell lcd capacitor 9013 npn npn 8050 9013 npn transistor audio pre-amplifier data sheet transistor 9013 NPN audio output BD NPN transistors	PDF
100-PIN Abstract: GVT71256ZC36 GVT71512ZC18 Text: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are	Original	GVT71512ZC36/GVT71A24ZC18 36/1M GVT71512ZC36 GVT71A24ZC18 288x36 576x18 71512ZC36 71A24ZC18 100-PIN GVT71256ZC36 GVT71512ZC18	PDF
BD190 Abstract: BD - 100 V BD185 BD188 bd 190 Text: ► BD186 * BD188 * BD190 Silizium-PNP-Epibasis-Transistoren Silicon PNP Epibase Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Audio amplifier, driver and output stages Features: Besondere Merkmale: • Hohe Spitzenleistung	OCR Scan	N125A BD190 BD - 100 V BD185 BD188 bd 190	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
tfk 135 Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135 Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W	OCR Scan	erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135	PDF
BD441 Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439 Text: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power	OCR Scan	N125A BD441 bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439	PDF
transistor TIP 350 Abstract: BD253 tip 410 transistor b0253 BD253B BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683 Text: BD253, BD253A, BD253B, BD253C NPN SILICON POWER TRANSISTORS Formerly XB33 Series High Voltage Rating — V c e x uP t0 900 Volts High Current Rating — 6 Amps Peak Low Saturation Voltage at 3 Amps — 0.6 Volts typ. Fast Switching tf at 3 Amps — 300 nano Secs typ.	OCR Scan	BD253, BD253A, BD253B, BD253C BD253 0253A BD253B 700vers transistor TIP 350 tip 410 transistor b0253 BD253A BD253C junction to case thermal resistance of to-3 package transistor BD 800 2N5683	PDF
transistor BD 325 Abstract: tip 410 transistor transistor bu 126 BU126 TIP 122 transistor TIP 212 BU105 TIP high power transistor for inverter 500V15 transistor TIP 662 Text: BU126 NPN SILICON POWER TRANSISTOR B U 126 IS A H IG H V O L T A G E NPN S IL IC O N POWER T R A N S IS TO R • Designed for General Industrial and Consumer Applications • Primarily Intended for Use in Switching Mode Power Supplies mechanical specification	OCR Scan		PDF
2N5760 Abstract: HEP transistors 2N5758 2N5759 BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545 Text: TYPES 2N5758, 2N5759, 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATION S RECOMMENDED FOR CO M PLEM EN TARY USE WITH T1P544, TIP545, TIP546 • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current	OCR Scan	2N5758, 2N5759, 2N5760 TIP544, TIP545, TIP546 2N5758 2N5759 2N5760 HEP transistors BUY69 hep silicon diode TIP5 TLP545 BU108 TIP545	PDF
BD 266 S Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6 Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 \| BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6	PDF
tip 410 transistor Abstract: transistor TIP 662 P6020 P6019 transistor BD 253 BU105 texasinstruments bu 105 TRANSISTOR bd 108 BUY69 Text: BU105 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T .S C A N N IN G • • • V'c es Rating 1500 V Current Rating - 2 .5 Amps Peak Fast Switching — tp at 2 Amps 0.6 Microsecond Typical development types The data presented here ¡s o f a device under deve lopm ent, and m ay be subject to change w ith o u t notice . N o responsibi	OCR Scan		PDF
K 3264 transistor Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor Text: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q \| XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.	OCR Scan	b3b7254 AN-4151 K 3264 transistor BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor	PDF

Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369	PDF
nf 922 Abstract: No abstract text available Text: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SK2856 53Z14 --j250 nf 922	PDF
TRANSISTOR BC 137 Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded	OCR Scan	BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815	PDF
transistor BD 135 Abstract: capacitor J336 EQUIVALENT OF K 2843 J336 TPV8200B transistor k 2843 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza	OCR Scan	TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 EQUIVALENT OF K 2843 J336 transistor k 2843	PDF
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan		PDF
sot-23 MARKING CODE ZA Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23 Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same	OCR Scan	OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
RPY 86 Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1 Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ	OCR Scan		PDF
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan		PDF
BUY69 Abstract: No abstract text available Text: Ptot Typ type T a = 25 °C 100 oc W w 2N 5685 2N 5686 5 5 300 300 2N 5758 2N 5759 2N 5760 5 5 5 2N 6326 2N 6327 2N 6328 5 5 5 TC = 25 °C (100 OC) @ ic VCEO ICD min V max A min hFE max 60 80 50 50 15 15 60 60 25 25 150 150 150 100 120 140 6 6 6 25 20 15	OCR Scan	12eceivers BUY69	PDF

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BD 69 TRANSISTOR Search Results

BD 69 TRANSISTOR Result Highlights (5)

BD 69 TRANSISTOR Datasheets Context Search

Untitled

IB0810M100

dell lcd 17 power supply diagram

100-PIN

BD190

bc 540

tfk 135

BD441

transistor TIP 350

transistor BD 325

2N5760

BD 266 S

tip 410 transistor

K 3264 transistor

Transistoren DDR

nf 922

TRANSISTOR BC 137

transistor BD 135

TFK diodes BYW 76

sot-23 MARKING CODE ZA

ksd 302 250v, 10a

RPY 86

LDR 03

BUY69