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    BD 647 Search Results

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    BD 647 Price and Stock

    Bourns Inc BD647-S

    TRANS NPN DARL 80V 8A TO-220
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    DigiKey BD647-S Tube
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    Avnet Americas BD647-S Reel 15,000
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    Avnet Abacus BD647-S 143 Weeks 15,000
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    Nichicon Corporation UBY1V472MHLBDEVK

    Aluminum Electrolytic Capacitors - Radial Leaded
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    Mouser Electronics UBY1V472MHLBDEVK
    • 1 $4.21
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    Skyworks Solutions Inc SI5341B-D09647-GMR

    Clock Generators & Support Products Ultra low-jitter, 10-output, any-frequency (< 350 MHz), any output clock generator
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    Mouser Electronics SI5341B-D09647-GMR
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    Amphenol Positronic CBD47W1M55R600S/AA

    D-Sub Mixed Contact Connectors D-Sub Male Connector 47P Solder Tail Right Angle 47W1 Stainless Steel, Passivated Shell RoHS
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    Mouser Electronics CBD47W1M55R600S/AA
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    Skyworks Solutions Inc SI5341B-D09647-GM

    Clock Generators & Support Products Ultra low-jitter, 10-output, any-frequency (< 350 MHz), any output clock generator
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI5341B-D09647-GM
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    Find more BD 647 price and stock on Findchips.com

    BD 647 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD647 Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BD647 Comset Semiconductors Silicon NPN Darlington Power Transistors Original PDF
    BD647 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BD647 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
    BD647 General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. Scan PDF
    BD 647 Infineon Technologies TRANS DARLINGTON NPN 80V 8A 3TO-220AB Scan PDF
    BD647 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD647 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD647 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD647 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD647 Unknown Cross Reference Datasheet Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Transistor Replacements Scan PDF
    BD647 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD647 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BD 647 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CHN 749

    Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
    Text: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_


    Original     		DQD68667667 KHX37 9398VED2 776VBD2 886VBD 666Vlgm ggX884 98VED /776r CHN 749 CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64 PDF

    chn 537

    Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
    Text: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb


    Original     		F6889 DQD57556556 KHX26 8287VED 95Bgjm3Bff 9555Vlgm 39ggX9 E2YB65Y E2YB75Y E2YB95Y chn 537 chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761 PDF

    BD5936

    Abstract: BD5935 dold bd5935 dold bd5936.17 bd 5936 5936 Bd 529 M6469 947-5-1 dold bd5936
    Text: Sicherheitstechnik Stillstandswächter BD 5936 safemaster 0214264 • zur Stillstandsüberwachung von 3- und 1-phasigen Asynchronmotoren · Aderbrucherkennung im Meßkreis · zwangsgeführte Ausgangskontakte: 2 Schließer, 2 Öffner für AC 250 V · LED-Anzeigen für Motorstillstand, Aderbruch und Betriebsspannung


    Original     		BD5935 BD5936 D-78114 BD5935 dold bd5935 dold bd5936.17 bd 5936 5936 Bd 529 M6469 947-5-1 dold bd5936 PDF

    P1016

    Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1016-BD 15-Feb-10 MIL-STD-883 XP1016-BD XP1016-BD-EV1 XP1016 P1016 DM6030HK XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic PDF

    Untitled

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1016-BD 04-Dec-09 MIL-STD-883 XP1016-BD-EV1 XP1016 PDF

    XB1005-BD-000V

    Abstract: 5609 transistor XB1005 XB1005-BD XB1005-BD-EV1 720-0164 15-1090 MAX 77693 143-028 876-1424
    Text: XB1005-BD Buffer Amplifier 35.0-45.0 GHz Rev. V1 Features Chip Device Layout •       High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias


    Original     		XB1005-BD Mil-Std-883 XB1005-BD-000V 5609 transistor XB1005 XB1005-BD XB1005-BD-EV1 720-0164 15-1090 MAX 77693 143-028 876-1424 PDF

    sony blu-ray optical pick-up

    Abstract: photodetector IC dvd blu-ray PDIC
    Text: PDIC for Blu-ray Disc Player CXA2958EN Description The CXA2958EN is a PDIC photodetector IC developed as a photodetector for optical pickups of Blu-ray disc players. This IC has the photodetector area separately for BD/DVD and CD. Therefore, the optical pickup can be configured with the


    Original     		CXA2958EN CXA2958EN sony blu-ray optical pick-up photodetector IC dvd blu-ray PDIC PDF

    IPW157E

    Abstract: v629
    Text: 31|~1 .IPW157E/ 6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1EBPQNEO Z 59@ lpbm\abg` \ZiZ[bebmr Z 529dU ]b^e^\mkb\ lmk^g`ma .[^mp^^g \hbe Zg] \hgmZ\ml/ Z UZkbhnl m^kfbgZel ZoZbeZ[e^ Z Rh\d^ml ZoZbeZ[e^ Z Bhg_hkf mh ma^ BD ehp ohemZ`^ ]bk^\mbo^ Z 5 - 6 ihe^ \hg_b`nkZmbhgl


    Original     		IPW157E/ 529dU 7924/ff BPB46445445 mh525V? B374UCB GE57E36Y IPW157E v629 PDF

    sony DVD player power circuit diagram

    Abstract: CXA2958 CXA29 sony dvd Laser pickup BD DVD Laser pickup sony m-100 sony blu-ray optical pick-up blu-ray OPTICAL PICK-UP CXA2958EN pdic dvd
    Text: PDIC for Blu-ray Disc Player CXA2958EN Description The CXA2958EN is a PDIC photodetector IC developed as a photodetector for optical pickups of Blu-ray disc players. This IC has the photodetector area separately for BD/DVD and CD. Therefore, the optical pickup can be configured with the


    Original     		CXA2958EN CXA2958EN sony DVD player power circuit diagram CXA2958 CXA29 sony dvd Laser pickup BD DVD Laser pickup sony m-100 sony blu-ray optical pick-up blu-ray OPTICAL PICK-UP pdic dvd PDF

    MAX 77693

    Abstract: 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		06-Mar-07 B1005-BD MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 MAX 77693 154407 672047 Mimix xb1005 190728 132-16 103-336-15 transistor RF S-parameters 443-958 319-770 PDF

    014728

    Abstract: 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005 XB1005-BD-000V
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD October 2008 - Rev 02-Oct-08 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 02-Oct-08 Mil-Std-883 XB1005 014728 30106 38095 47185 62726 74226 DM6030HK TS3332LD XB1005-BD-000V PDF

    672047

    Abstract: 304091 1903354 13007-2
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 06-Mar-07 MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 672047 304091 1903354 13007-2 PDF

    903-949

    Abstract: 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD
    Text: 35.0-45.0 GHz GaAs MMIC Buffer Amplifier B1005-BD March 2007 - Rev 06-Mar-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias


    Original     		B1005-BD 06-Mar-07 MIL-STD-883 XB1005-BD-000V XB1005-BD-EV1 XB1005 903-949 74226 XP1001 13007-2 720-0164 4-01-3024 14364 62726 DM6030HK TS3332LD PDF

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


    OCR Scan     		0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN PDF

    B0646

    Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
    Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington


    OCR Scan     		fl23Sb05 DQ43CI1 T-33-31 OP-66) 644/BD BD648, BD644. BO646. BO648. BD660 B0646 BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660 PDF

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


    OCR Scan     		23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650 PDF

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    BDX69

    Abstract: transistor handbook BDX68 BDX68A BDX68C BDX69B
    Text: ¡A-ISp 2 .5 8 BDX69; 69A BDX69B; 69C JV DARLINGTON POWER T R A N SIST O R S N-P-N Darlingtons for audio output stages and general amplifier and switching applications. In TO-3 envelope. P-N-P complements are BD X68, 8D X6 8A , BD X 6 8 8 and BD X 68 C . Q U IC K R E F E R E N C E D A T A


    OCR Scan     		BDX69; BDX69B; BDX68, BDX68A, BDX688 BDX68C. BDX69 transistor handbook BDX68 BDX68A BDX68C BDX69B PDF

    BD646F

    Abstract: BD649F BD650F BD643F BD648F BD652F 651F
    Text: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.


    OCR Scan     		BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F PDF

    750589-4

    Abstract: No abstract text available
    Text: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL COPYRIGHT 19 3 2 ,19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 5 6 LOC ALL RIGHTS RESERVED. DI ST REVISIONS BD DESCRIPTION REVISED J PER EC 0G40-0272-99 DD KB 16N0V99 POSITION NUMBERS SHOWN FOR REFERENCE ONUY. 6 . 07


    OCR Scan     		0G40-0272-99 16N0V99 QQ-B-750. MID-G-45204, QQ-N-290, MID-T-10727, MID-C-14550 27JUN96 29-DEC-99 amp36051 750589-4 PDF

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


    OCR Scan     		1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995 PDF

    750593-6

    Abstract: No abstract text available
    Text: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 6 4 5 3 2 19 LOC ALL RIGHTS RESERVED. DI ST REVISIONS BD DESCRIPTION REVISED POSITION 5 . 89 [ .232] 2 PLC 4-40 THREADED 4 PLC 20.32+0.25 [ . 800±.010] 12 . 0 1 ± 0 . 25


    OCR Scan     		0G40-0267-99 16N0V99 NIL-C-50. 27JUN96 27-DEC-99 amp36051 /home/amp36051/edmmod 750593-6 PDF

    ci-42

    Abstract: No abstract text available
    Text: BD643F; 645F; 647F BD649F: 651F_ P hilips sbE d international • GOME^b b « phin SILICON DARLINGTON POWER TRAN SISTO RS N PN silicon Darlington transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D 6 44 F , B D 6 46 F , B D 6 48 F , B D 6 5 0 F and BD 6 52 F .


    OCR Scan     		BD643F; BD649F: BD643F BD649F; 711005b T-33-29 ci-42 PDF