BD 643 Search Results

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

DFB 1570

Abstract: 10g DFB SPPL-OR SP-03-IR1 SPC-03-XLR SPG-DR APD 1550 nm SP-GB-ZX SPP-10E-LR-CDFB bd 9080
Contextual Info: SFP Tri-rate SX I-tem Transceiver SFP Tri-rate SX C-tem Transceiver SFP 622M 15km C-tem Transceiver Single Fiber EFM SFP Products www.sourcephotonics.com Data Rate mb/s SFP SPL-35-FE-BX SPL-53-FE-BX SPL-35-FE-EBX SPL-53-FE-EBX SPL-35-FE-BD SPL-53-FE-BD SPL-45-FE-BZ

Contextual Info: DRA WI NG TH IS MADE D R AW I NG IN 15 4 THIRD ANGL E R CLCAGCD COPYRIGHT 19 BY AMP 2 3 PROJECTION UN PU BLIS H ED . T OR P U D L I C A T IO N INCORPORATED. REV I 5 1 0 N 5 BD 48 INTERNATIONAL RIGHTS RESERVED. DESCR]PT]ON REV g REDRAWN ECN BD 33 60 - ADDED - 6

BD-A546RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A546RD SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A516RE SINCE 1981 ● 1. Features : ● Package Dimensions : 0.56 inch 14.20mm Digit Height. 8.10(.315) 8 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A516RE SINCE 1981 ● 1. Features : ● Package Dimensions : 0.56 inch 14.20mm Digit Height. 8.10(.315) 8 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F506RI SINCE 1981 ● 1. Features : Package Dimensions : ● 0.50 inch 12.70mm Digit Height. 7.10(.280) 10 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability.

BD-F306RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F306RD SINCE 1981 ● Features : 1. 0.30 inch 7.62mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. ● Package Dimensions : 10 4.00(.157)

BD-E326RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E326RD For : 高詰 SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC BD ALL RIGHTS RESERVED. DIST REVISIONS 77 LTR -16.31 [. 642] DATE RLSE -1 NPR 5366, WAS 95-7343-8-1 06 / 27/95 REV PER EC 0G40-226-98 17 JUN 98 DUN APVD PB RT

109007

Abstract: B1728 BD262
Contextual Info: DRAWING MADE IN THIRD ANGLE PROJECTION THIS ORA WING IS UNPUBLISHED, COPVRI0HT T9 OY A M P RESERVED. AMP 1 I 3 2 I 1 1 |RELEASED FOR PUBLICATION OIST MOD 2 0 L OC DATE APPROVED BD 39 REVISIONS INCORPORATED,HARRISBURG, PA. ALL INTERNATIONAL RIGHTS PRODUCTS HAY BE COVERED BY U.

BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Contextual Info: BD643F;645F;647F BD649F: 651F_ PHILIPS 711002b 5bE D INTERNATIONAL OOME^b b'iü • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon Darlington transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements a re B D 6 4 4 F , B D 646F, B D 648F, BD 650F and B D 652F.

HD-20

Abstract: MIL-T-10727
Contextual Info: DRAWING THIS MADE DRAWING IN 4 THIRD A NGL E IS UNPUBLISHED. PROJECTION RELEASED FOR P U B L I C A T I O N COPYRIGHT 19 BY AMP INCORPORATED. ALL LOC ,19 D IS T REVISIONS BD 77 IN TERNATIO NAL RIG H T5 RESERVED. ZONE D REDRAWN S REVISED. OBS 2 0 7 8 2 6 - 7 , - 8

Contextual Info: DRAWING MADE THIS 8 IN THIRD DRAWING ANGLE IS UNPUBLISHED. COPYRIGHT 19 7 P RO JE C TI ON RELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. ALL 6 5 3 4 2 ,19 LOC D IST BD INTERNATIO NAL RIGHTS RESERVED. 1 REVISIONS 26 ZONE LTR D E S C R I P T IO N

Contextual Info: 7 8 DRAWING MADE T H IS IN THIRD DRAWING IS UN PU BLISH ED. COPYRIGHT 6 5 3 4 2 1 ANGLE P R O JE C T IO N 19 RELEASED BY AMP INCORPORATED. ALL LOC ,19 FOR P U B L I C A T I O N D IST R E V IS IO N S 77 BD INTERNATIO NAL RIGHTS RESERVED. ZONE D A TE A PPD

ci-42

Contextual Info: BD643F; 645F; 647F BD649F: 651F_ P hilips sbE d international • GOME^b b « phin SILICON DARLINGTON POWER TRAN SISTO RS N PN silicon Darlington transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D 6 44 F , B D 6 46 F , B D 6 48 F , B D 6 5 0 F and BD 6 52 F .

Contextual Info: THIS DRAWING IS UNPUBLISHED. APT O D COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - REVISIO N S ALL RIGHTS RESERVED. BD P LTR DESCRIPTION T R EV P ER DATE DWN CJV SB 2-9-07 ECO —0 7 - 0 0 0 0 7 7 APVD C O N N E C T O R M A T E S WITH A N Y 9 P O S N P L U G IN A M P L I M I T E S E R I E S

IB IL 24 L2

Abstract: RS-485-PROFIBUS TNR90 CP-MSTB 6438A IB PB BK
Contextual Info: IL PB BK-R PROFIBUS-DP Bus Coupler with a Reduced Number of Operable Terminals G S D Data Sheet 6438A 6 4 3 8 A 0 0 1 08/2002 This data sheet is only valid in association with the "Configuring and Installing the PROFIBUS-DP Fieldbus Coupler for the Inline Product Range"