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    BD 149 TRANSISTOR Search Results

    BD 149 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BD 149 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AX5621

    Abstract: No abstract text available
    Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation


    Original     		16-Bit 16-Channel MAX5621/MAX5622/MAX5623 100kHz AX5621 PDF

    KVL01

    Abstract: No abstract text available
    Text: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in


    Original     		MC100LVEL01 LVEL01 KVL01 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 PDF

    E140173

    Abstract: SERVO MOTOR 50 PIN CONNECTOR analog servo PIC16F877A circuit diagram Advanced Motion Controls ac servo drive ac motor servo control circuit diagram transistor servo drive dc servo motor encoder ADVANCED MOTION CONTROLS PWM
    Text: Analog Servo Drive Description BD15A8 Power Range The BD15A8 PWM servo drive is designed to drive brushless DC motors at a high switching frequency. It is fully protected against over-voltage, over-current, over-heating and short-circuits. The drive interfaces


    Original     		BD15A8 BD15A8 E140173 SERVO MOTOR 50 PIN CONNECTOR analog servo PIC16F877A circuit diagram Advanced Motion Controls ac servo drive ac motor servo control circuit diagram transistor servo drive dc servo motor encoder ADVANCED MOTION CONTROLS PWM PDF

    QFN-68

    Abstract: LQFP-64 footprint 21-0142E AX5631 MAX5633UTK T MAX5632UCB D t6800
    Text: 19-2171; Rev 3; 1/05 16-Bit DACs with 32-Channel Sample-and-Hold Outputs Ordering Information PART TEMP RANGE* MAX5631UCB 0°C to +85°C 64 TQFP MAX5631UTK 0°C to +85°C 68 Thin QFN MAX5632UCB 0°C to +85°C 64 TQFP MAX5632UTK 0°C to +85°C 68 Thin QFN MAX5633UCB


    Original     		16-Bit 32-Channel MAX5631/MAX5632/MAX5633 100kHz QFN-68 LQFP-64 footprint 21-0142E AX5631 MAX5633UTK T MAX5632UCB D t6800 PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    0x01FFFFFF

    Abstract: transistor BD 522 08FF ARM7500
    Text: 1 14 11 Memory Subsystems 14.1 ROM interface 14-2 14.2 DRAM interface 14-7 14.3 DMA channels 14-16 ARM7500 Data Sheet ARM DDI 0050C Preliminary - Unrestricted This chapter describes the ROM and DRAM interfaces, and the DMA channels. 14-1 Memory Subsystems


    Original     		ARM7500 0050C 0x00000000 0x01FFFFFF, 32-bits 0x01FFFFFF transistor BD 522 08FF PDF

    LQFP-64 footprint

    Abstract: No abstract text available
    Text: 19-3563; Rev 1; 5/05 12-Bit DACs with 32-Channel Sample-and-Hold Outputs _Applications MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5331UCB


    Original     		12-Bit 32-Channel MAX5331/MAX5332/MAX5333 MAX5331/MAX5332/MAX5333 100kHz LQFP-64 footprint PDF

    motorola 1N4148

    Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
    Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module


    Original     		DSP56301ADM DSP56301ADMUM/AD DSP56301 DSP56301ADM) Augat/RD1-MC6-P102-02 30-pin TSM11501SDV 14-pin TSM10701SDV 20-pin motorola 1N4148 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO PDF

    SC08810

    Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
    Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


    OCR Scan     		BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 SC08810 B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP PDF

    BD 149 transistor

    Abstract: bd 317 BD315 bd318 transistor D317 BD317
    Text: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith


    OCR Scan     		BD315, BD318. AN-415) BD 149 transistor bd 317 BD315 bd318 transistor D317 BD317 PDF

    zt158

    Abstract: BD 149 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this


    OCR Scan     		IS22I MRF20030 zt158 BD 149 transistor PDF

    sot-23 Marking LG

    Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
    Text: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed


    OCR Scan     		CMPF4416A OT-23 sot-23 Marking LG code 619 sot-23 transistor marking code lg PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    2SA1038

    Abstract: 2SA1039
    Text: h ~P > y X 3?/T ra n s is to rs 2SA1038/2SA1039 y ' J - 1> h 7 > ' > ^ $ " s i i t e f f l /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar PNP Silicon Transistors rtifliiJEEfliJi • ü - f f i \ t " ; £ E 3 / Dim nsions U n it : mm 1) S Ü 8 Œ T & 5 (V c e o = - 8 0 V , - 1 2 0 V ) o


    OCR Scan     		2SA1038/2SA1039 2SC2389, 2SC2389 2SC2390. 2SA1038 2SA1039 2SA1038 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126


    OCR Scan     		BD233, BD235 BD237 O-126 BD234, BD236 BD238 BD233 BD234 PDF

    BFT65

    Abstract: transistor bft65 f451 61 SIEMENS 25813
    Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration


    OCR Scan     		BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813 PDF

    SP126

    Abstract: No abstract text available
    Text: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt


    OCR Scan     		OT-23 OT-223 OT-89, OT-143, EIA-RS481A IEC286-3 BB215 PB219 PZT2907A SP126 PDF

    2sd155

    Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		NPN110. BLY88 BLY92 700MI 500MI MT72C BUY43 MHT5901 MHT5902 10On0 2sd155 SN232 BLY92 2SD154 BD109 TIP27 MD17A X51c stc1201 PDF

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    VEB mikroelektronik

    Abstract: mikroelektronik DDR mikroelektronik RFT elektronik DDR DDR Schaltkreise bauelemente DDR elektronische bauelemente rft Transistoren DDR service-mitteilungen RFT Service Mitteilung
    Text: RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Ausgabe ¡^M\radio-te/evision\ Ckt. 1988 f VEB 00 SERVICE-MITTEILUNGEN Seite 1-9 Mitteilung aus dem VEB RFT IV RuF Leipzig/Servicevorbereitung Effektive Eroduktionstechnologie in der KonBumguterelektronik - kontra Heparaturtechnologie ?


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF