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onsemi NCP1393BDR2G Gate Drivers HV HALF-BRIDGE DRVER
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Mouser Electronics	NCP1393BDR2G		9,943			1 $1.02 10 $0.84 100 $0.65 1000 $0.479 10000 $0.424	Buy Now
onsemi NCP1392BDR2G Gate Drivers HV HALF-BRIDGE DRVER
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Mouser Electronics	NCP1392BDR2G		8,501			1 $0.67 10 $0.667 100 $0.545 1000 $0.47 10000 $0.423	Buy Now
Mini-Circuits BDCN-17-25+ Signal Conditioning BI-DIR COUP / SURF MT / RoHS
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Mouser Electronics	BDCN-17-25+		4,779			1 $5.29 10 $5.29 100 $4.18 1000 $3.26 10000 $2.98	Buy Now
Mini-Circuits BDCN-20-13+ Signal Conditioning BI-DIR COUP / SURF MT / RoHS
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Mouser Electronics	BDCN-20-13+		3,558			1 $5.16 10 $5.16 100 $4.18 1000 $3.26 10000 $2.98	Buy Now
Mini-Circuits BDCN-14-342+ Signal Conditioning BI-DIR COUP / SURF MT / RoHS
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Mouser Electronics	BDCN-14-342+		3,282			1 $4.93 10 $4.93 100 $4.18 1000 $3.26 10000 $3.12	Buy Now

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BD 139 N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD139 MOTOROLA Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	PDF	BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	PDF	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
transistor BD 141 Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram
Untitled Abstract: No abstract text available Text: CGB7017-SC -BD Advanced Product Information January 2005 V1.0 (1 of 7) Features ❏ Low Operating Voltage: 5V ❏ 33.8 dBm Output IP3 @ 850 MHz ❏ 3.3 dB Noise Figure @ 850 MHz ❏ 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz ❏ 18.2 dBm P1dB @ 850 MHz ❏ Low Performance Variation Over Temperature	Original	PDF	CGB7017-SC OT-89
CGB7017-SC Abstract: BD 644 CGB7017-SC-0G0T CGB7017-BD CGB7017-SC-0G00 CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 0776 Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz	Original	PDF	23-May-06 CGB7017-SC OT-89 OT-86 CGB7017-SC BD 644 CGB7017-SC-0G0T CGB7017-BD CGB7017-SC-0G00 CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 0776
Untitled Abstract: No abstract text available Text: CGB7014-SC -BD Advanced Product Information June 2004 V1.0 (1 of 7) Features ❏ 18.5 dB Gain @ 6 GHz ❏ 24.5 dB Gain @ 850 MHz ❏ 36.0 dBm Output IP3 @ 850 MHz ❏ 3.5 dB Noise Figure @ 850 MHz ❏ 20.3 dBm P1dB @ 850 MHz ❏ Low Performance Variation Over Temperature	Original	PDF	CGB7014-SC OT-89 11a/b/g
mmic C5 sot 86 Abstract: CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700 Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 01-Sep-06 CGB7017-SC -BD Features Functional Block Diagram (SOT-89) Low Operating Voltage: 5V 33.8 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 23.1 dB Gain @ 850 MHz, 19.5 dB @ 6 GHz	Original	PDF	01-Sep-06 CGB7017-SC OT-89 OT-86 mmic C5 sot 86 CGB7017-BD CGB7017-SC CGB7017-SC-0G00 CGB7017-SC-0G0T CGB7017-SP-0G00 CGB7017-SP-0G0T MCH185A101JK PB-CGB7017-SC-0000 sc 6700
mmic C4 sot 89 Abstract: CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier May 2006 - Rev 23-May-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz	Original	PDF	23-May-06 CGB7014-SC OT-89 OT-86 mmic C4 sot 89 CGB7014-SC CGB7014-BD CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
bd 139 smd Abstract: CHA-3688 CHA3688AQDG CHA3688a-QDG AN0017 MO-220 Text: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. UMS A3667A A3688A YYWWG The circuit is manufactured with a standard	Original	PDF	CHA3688aQDG 5-30GHz CHA3688aQDG A3688A A3667A 115mA 30GHz 26dBm 24L-QFN4x4 DSCHA3688aQDG8073 bd 139 smd CHA-3688 CHA3688a-QDG AN0017 MO-220
CGB7014-BD Abstract: CGB7014-SC CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000 Text: DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier September 2006 - Rev 18-Sep-06 CGB7014-SC -BD Features Functional Block Diagram (SOT-89) 18.5 dB Gain @ 6 GHz 24.5 dB Gain @ 850 MHz 36.0 dBm Output IP3 @ 850 MHz 3.5 dB Noise Figure @ 850 MHz	Original	PDF	18-Sep-06 CGB7014-SC OT-89 OT-86 CGB7014-BD CGB7014-SC CGB7014-SC-0G00 CGB7014-SC-0G0T CGB7014-SP-0G00 CGB7014-SP-0G0T MCH185A101JK PB-CGB7014-SC-0000 PB-CGB7014-SP-0000
BD 139 N Abstract: transistor BD 141 bd139 Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to	OCR Scan	PDF	023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139
tfk 135 Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135 Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W	OCR Scan	PDF	erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
Untitled Abstract: No abstract text available Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137	OCR Scan	PDF	BD135/137/139 BD136, BD140 BD135 BD137 BD139
Untitled Abstract: No abstract text available Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80	OCR Scan	PDF	KSD135/137/139 BD140 BD137 BD139 BD135 BD137,

bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	PDF	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
tfk 138 Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136 Text: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W	OCR Scan	PDF
BD 139 N Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436 Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50	OCR Scan	PDF	OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
TESLA KU 602 Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente	OCR Scan	PDF	O-220 TESLA KU 602 TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
BD NPN transistors 177 Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42 Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15	OCR Scan	PDF	BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180
BD 139 transistor Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140 Text: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A	OCR Scan	PDF	BD140 sot-32 40PEP 80PEP OT-32 OT-32 O-66P BD 139 transistor BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
transistor BD 246 Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A	OCR Scan	PDF	BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
transistor bd 139 Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245 Text: BD138 PNP E P IT A X IA L P L A N A R S IL IC O N TR A N S IS TO R 1 1 7 1 D ESIGN ED FO R CO M PLEM EN TARY USE WITH BD137	OCR Scan	PDF	BD138 BD137 MIL-STD-750. OT-32 OT-32 40PEP 80PEP transistor bd 139 transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245
BDX 241 Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137 Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A	OCR Scan	PDF	BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137

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onsemi NCP1393BDR2G

onsemi NCP1392BDR2G

Mini-Circuits BDCN-17-25+

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BD 139 N Datasheets Context Search

BD139 MOTOROLA

TRANSISTOR BD 136

transistor BD 141

Untitled

CGB7017-SC

Untitled

mmic C5 sot 86

mmic C4 sot 89

bd 139 smd

CGB7014-BD

BD 139 N

tfk 135

Untitled

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bo 139

tfk 138

BD 139 N

TESLA KU 602

bc 540

BD NPN transistors 177

BD 139 transistor

transistor BD 246

transistor bd 139

BDX 241