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    GCT Semiconductor Inc BD125-30-A-0305-0580-L-B

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    DigiKey BD125-30-A-0305-0580-L-B Reel 3,000 1,000
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    Newark BD125-30-A-0305-0580-L-B Reel 2,000 1,000
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    BD125-30-A-0305-0580-L-B Cut Tape 1,000 1
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    GCT Semiconductor Inc BD125-40-A-0305-0580-L-B

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    DigiKey BD125-40-A-0305-0580-L-B Reel 3,000 1,000
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    Newark BD125-40-A-0305-0580-L-B Reel 2,000 1,000
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    BD125-40-A-0305-0580-L-B Cut Tape 823 1
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    • 1000 $2.89
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    GCT Semiconductor Inc BD125-34-A-0305-0580-L-B

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    DigiKey BD125-34-A-0305-0580-L-B Reel 2,000 1,000
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    Newark BD125-34-A-0305-0580-L-B Reel 2,000 1,000
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    BD125-34-A-0305-0580-L-B Cut Tape 888 1
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    • 1000 $2.7
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    GCT Semiconductor Inc BD125-26-A-0305-0580-L-B

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    DigiKey BD125-26-A-0305-0580-L-B Reel 2,000 1,000
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    Newark BD125-26-A-0305-0580-L-B Reel 2,000 1,000
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    BD125-26-A-0305-0580-L-B Cut Tape 1,000 1
    • 1 $2.87
    • 10 $2.64
    • 100 $2.32
    • 1000 $2
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    GCT Semiconductor Inc BD125-16-A-0305-0580-L-B

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    DigiKey BD125-16-A-0305-0580-L-B Reel 2,000 1,000
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    Newark BD125-16-A-0305-0580-L-B Reel 2,000 1,000
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    BD125-16-A-0305-0580-L-B Cut Tape 955 1
    • 1 $2.22
    • 10 $2.04
    • 100 $1.79
    • 1000 $1.55
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    BD 125 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD12.501 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BD 125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140 PDF

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 PDF

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 PDF

    bd5460

    Abstract: B0243 BD250 B0245A B0246 B0544 BD239 BD245C BD545B BD239A
    Text: T e x a s In s t r u m e n t s 2-6A Up to 65W T O -6 6 Plastic Packages Characteristics Tcase = 2 5 'C M a x Ratings at Tease = 2 b - C >» Device Type BD239 BD 239A BD239B BD 239C BD240 B0240A BD 240B BD 240C B D 24 1 BD 241A BD241B BD 241C BD242 BD 242A


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    Tease-25-C BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C BD241 bd5460 B0243 BD250 B0245A B0246 B0544 BD245C BD545B PDF

    D 1703

    Abstract: No abstract text available
    Text: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode


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    MMBD1701/A MMBD1701/A 1703/A 1704/A 1705/A OT-23 MMBD1701 D 1703 PDF

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


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    fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 PDF

    828BD

    Abstract: BD NPN transistors BD 826 NPN
    Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60


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    00142bQ 828BD BD NPN transistors BD 826 NPN PDF

    BD 139 N

    Abstract: transistor BD 141 bd139
    Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to


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    023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139 PDF

    lem HA 10000

    Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
    Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A


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    BDW23/A/B/C BDW24, BDW24A, BDW24B BDW24C BDW23 BDW23A BDW23B BDW23C lem HA 10000 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60


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    BDW23/A/B/C PDF

    93c100

    Abstract: No abstract text available
    Text: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A


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    BDW93/A/B/C 93c100 PDF

    darlington bd 876

    Abstract: transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd
    Text: esc D a i fi23St.0S 0 0 0 4 4 2 3 7 H S IE 6 ^ PNP Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF h23 T-33-31 * BD 876 BD 878 BD 880 ° BD 876, BD 878, and BD 880 are epitaxial PNP silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . These darlington transistors


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    A23Sfc QQ044S3 T-33-31 Q62702-D908 Q62702-D907 Q62702-D906 Q62902-B63 Q62902-B62 125min darlington bd 876 transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW24/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 23, BD W 23A, BD W 23B and BD W 23C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollecto r E m itter V oltage : BD W 24


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    BDW24/A/B/C PDF

    B0680

    Abstract: bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD677 BD 678 BD680 BD681
    Text: BD 676 'BD 678 -BD 680 -BD 682 'W Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Sehr hohe Stromverstärkung • Very high current transfer ratio


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    682are mentarytoBD675 BD677 BD679 BD681 B0680 bd 682 0477A2 her32 bd676 Bd 676/BD 675 BD 678 BD680 BD681 PDF

    transistor BD 141

    Abstract: No abstract text available
    Text: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126


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    BD136. BD138, BD140 6235bQS BD138. transistor BD 141 PDF

    8d136

    Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
    Text: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6


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    8D136, BD138, BD140 BD136. 023SbQS Q0QH341 BD13S. B0138, 8d136 transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133 PDF

    BD 677

    Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
    Text: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E


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    O-126- BD 677 BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd PDF

    diode sg 89a

    Abstract: A1703 MMBD1703A sg 87a A1705 mmbd1701-1705 MMBD1704A MMBD1701 MMBD1701A MMBD1703
    Text: Semiconductor'" MMBD1701/A 1 1703/A 1 1704/A / 1705/A _S_ 85 m h- M ARKING M M BD 1701 M M BD1703 M M BD1704 M M BD1705 SOT-23 85 87 88 89 M M BD 1701A M M BD 1703A M M BD 1704A M M BD 1705A 85A 87A 88A 89A High Conductance Low Leakage Diode Sourced from Proce ss 1T.


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    MMBD1701/A 1703/A 1704/A 1705/A OT-23 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 diode sg 89a A1703 sg 87a A1705 mmbd1701-1705 MMBD1704A PDF

    BD 440 PNP transistors

    Abstract: BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441
    Text: BD 438 - BD 440 - BD 442 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: Features: • Hohe Spitzenleistung • Verlustleistung 36 W


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    verb00 BD 440 PNP transistors BD PNP BD438 BD442 BD 438 b0438 b0440 BD440 BD - 100 V bd441 PDF

    BD237

    Abstract: BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors
    Text: BD 233 * BD 235 - BD 237 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak power


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    2DIN125A 150mA1) BD237 BD 235 BD233 SD235 BD235 BD 100 V BD 237 to 126 leistungstransistoren 32-DIN BD NPN transistors PDF

    siemens cca

    Abstract: 62702-D
    Text: 25C T> m fl23Sfc.0S 0004373 7 U lIZG . - r - 3 3 ' r f PNP Silicon Planar Transistors BD 487 _ BD 488 SIEMENS AKTIENGESELLSCHAF 04373 BD 487 and BD 488 are epitaxial PNP silicon planar transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The


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    62702-D929 62702-D930 235b05 DQQ437b siemens cca 62702-D PDF

    l 129 v

    Abstract: BD129 bd127 128bd bd128 0477A2 BD 127 V2412 127BD TFK BD 128
    Text: BD 127 BD 128 BD 129 'V Silizium-NPN-Planar-Leistungstransistoren Silicon NPN Planar Power Transistors Anwendungen: Allgemein bei hohen Betriebsspannungen Applications: General at high supply voltages Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage


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    PDF

    TIP 34 pnp

    Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
    Text: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B


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    PDF

    transistor bD 288

    Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339
    Text: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.


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    23Sb05 125min. 62702-D Q62702-D901 62902-B63 62902-B62 023SbQ5 23SbQS transistor bD 288 TRANSISTOR 287 A transistor D 288 transistor bd 126 R339 PDF