BCW30 Search Results

transistor 720 smd

Contextual Info: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BCW29

Abstract: BCW30 BCW31 BCW32
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13 NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 FEATURES PINNING • Low current max. 100 mA

BCW29

Abstract: BCW30 BCW31 BCW33
Contextual Info: BCW29, BCW30 BCW29, BCW30 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-28 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

BCW29

Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage

Contextual Info: : Sv m Se m i ; 5YM 5EMI SEM ICONDUCTOR SOT -23 Plastic Encapsulate Transistors TRANSISTOR BCW30LT1 PNP FEATURES Power dissipation PCM : 0.225 W (Tamb=25 °C) Collector current Icm : -0.1 Collector base voltage A V (br)cbo : ~32 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BCW30LT1 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : -0.1

BCW29LT1

Abstract: BCW30LT1
Contextual Info: BCW30LT1 General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –32 Vdc Collector-Base Voltage VCBO –32 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC –100 mAdc Symbol

BCW30

Abstract: MMBT5086 icao
Contextual Info: SAMS UN G SEMICON DUC TO R INC BCW30 14E 0 | 7*^4142 0007204 7 | PNP EPITAXIAL SILICO N TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 “ABSOLUTE MAXIMUM RATINGS Ì l i f 25°C ' Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base: Voltage

BC857A

Abstract: BCW30 VQb 28
Contextual Info: Ml C O N D U C T O R i BCW30 E B S O T-23 M a rk : C 2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics.

SBCW30LT1G

Contextual Info: BCW30LT1G, BCW30LT1G General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCW29; BCW30 PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 13 2004 Jan 13 NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 PINNING FEATURES • Low current max. 100 mA

BCW23

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

bc856b

Abstract: IC 8002
Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D hFE VCE SAT fT VCEO IC

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Contextual Info: N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK R E FE R E N C E D ATA

BC857A

Abstract: BCW30
Contextual Info: BCW30 C E B SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings*

BCW30

Abstract: pnp general purpose amplifier pnp bcw30 Amplifier "marking code" D
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Amplifier FEATURES z Ideally suited for automatic insertion. z Epitaxial planar die construction. BCW30 Pb Lead-free APPLICATIONS z This device is designed for general purpose amplifier and switching applications.

AN-569

Abstract: BCW29LT1 BCW30LT1G MARKING CODE 16 transistor sot23
Contextual Info: BCW30LT1G General Purpose Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −32

BCW29

Abstract: SOT23 MARKING CODE 720 BCW30 BCW31 BCW32 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

marking 8b sot-23

Abstract: var vdc hfe nv BCW29 BCW29LT1 BCW30 BCW30LT1
Contextual Info: MOTOROLA Order this document by BCW29LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon BCW29LT1 BCW30LT1 COLLECTOR 3 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 Rating 2 Symbol Value Unit Collector–Emitter Voltage VCEO –32 Vdc Collector–Base Voltage