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    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C BC859 BC860
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850


    Original     		M3D088 BC849; BC850 BC859 BC860. BC849B BC850B SCA63 BC849 BC849B BC849C BC850 BC850B BC850C BC860 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ BC849 BC850 / SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A BC849 Collector-em itter voltage VgE = 0 Collector-em itter voltage (open base) BC850 V CES max.


    OCR Scan     		BC849 BC850 OT-23 BC849B BC850B BC849C BC850C PDF

    BCS49C

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE


    OCR Scan     		BC849 BC850 BC849 BC849B BCS49C BC850B 8C850C BC850 BCS49C PDF

    Transistors

    Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C Transistors BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC860 PDF

    BC849

    Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO


    Original     		BC849/850 BC859/860. BC850 BC849 00MHz BC849B BC849 2f bc850 BC849B BC849C BC850 BC850B BC850C PDF

    bc849

    Abstract: bc850c
    Text: DISCRETE SEMICONDUCTORS DAT BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C bc849 bc850c PDF

    BC850

    Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER


    OCR Scan     		BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC850 BC850B BCS49 BC849B BC849C BC850C 8C850 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage


    Original     		BC849/850 BC859/860. BC849 BC850 100MHz BC849B PDF

    BC850C

    Abstract: 2F PNP SOT23 BC849C 2G BC850C NXP BC849B BC849 BC849B BC850 BC850B BC859
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C BC850C 2F PNP SOT23 BC849C 2G BC850C NXP BC849B BC849 BC849B BC850 BC850B PDF

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


    Original     		ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C PDF

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


    Original     		OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C PDF

    BC849

    Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC


    Original     		BC849/850 BC849 BC850 BC849B BC849C BC850B BC849 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE :r 03 DE 1 7 B 2 0 5 3 3 □ OGbL.lb T '- BC846 BC848 BC850 NPN silicon planar general purpose transistors -2. f - f S BC847 BC849 ABSOLUTE MAXIMUM RATINGS Symbol BC846 BC847 BC848 BC849 BC850 Parameter Collector-base voltage Unit


    OCR Scan     		BC846 BC848 BC850 BC847 BC849 BC849 BC850 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC846 . BC849 BC846 . BC849 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		BC846 BC849 OT-23 O-236) UL94V-0 BC847 BC850 PDF

    IC marking jw

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_


    OCR Scan     		BC849 BC850 BC849B BC849C BC850B 100frequency IC marking jw BC849 BC849B BC849C BC850 BC850B BC850C PDF

    W15NA

    Abstract: No abstract text available
    Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14


    OCR Scan     		E3fl33T4 BC849 BC850 BC849B BC849C BC850B 8C850C W15NA PDF

    Untitled

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6


    OCR Scan     		BC849 BC850 BC849B BC849C BC850B 8C850C PDF

    bc850

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C


    OCR Scan     		BC849 BC850 BC850 BC849B BC850B PDF

    CMA102

    Abstract: marking 2gp BC849 BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors
    Text: • ^53*131 00244b2 4SI HIAPX BC849 BC850 b7E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage V g E = C o lle c to r-e m itte r voltage (open base)


    OCR Scan     		00244b2 BC849 BC850 OT-23 OT-23. BC849 35MHz CMA102 marking 2gp BC849B BC849C BC850 BC850B BC850C silicon planar epitaxial transistors PDF

    C849

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Aug 06 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		BC849; BC850 BC860. BC850B BC850C MAM255 115002/00/05/pp8 C849 PDF

    BC850 SOT23

    Abstract: 2FP TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		M3D088 BC849; BC850 BC859 BC860. BC850 BC849 BC849B BC849C BC850 SOT23 2FP TRANSISTOR PDF

    2FP TRANSISTOR

    Abstract: BC850B 2gp Transistor BC849 BC849B BC849C BC850 BC850C BC859 BC860
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 02 Philips Semiconductors Product specification NPN general purpose transistors


    Original     		M3D088 BC849; BC850 BC859 BC860. BC849 SCA55 2FP TRANSISTOR BC850B 2gp Transistor BC849 BC849B BC849C BC850 BC850C BC860 PDF

    2FP TRANSISTOR

    Abstract: 2gp Transistor BCB50C BC850 BCB50 marking 2Fp BC849C BC849 bc849b bc850c, sot23
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		BC849; BC850 BC859 BC860. BC849 BC849B BC849C BC850 BC850B BC850C 2FP TRANSISTOR 2gp Transistor BCB50C BCB50 marking 2Fp BC849C bc850c, sot23 PDF

    BC846R

    Abstract: No abstract text available
    Text: BC846,BC847,BC848,BC849,BC850 SERIES 30/45/65 Volts VOLTAGE 330 mWatts POWER SOT-23 Unit：inch mm • General purpose amplifier applications 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • NPN epitaxial silicon, planar design • Collector current IC = 100mA


    Original     		BC846 BC847 BC848 BC849 BC850 100mA 2002/95/EC IEC61249 OT-23 OT-23, BC846R PDF