BC640 TRANSISTOR Search Results

bc640

Abstract: bc636 bc638
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60

BC640

Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage

bc640

Abstract: BC638 BC636
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value

BC640-16

Abstract: BC640 BC64 BC638G BC638 BC638ZL1 BC638ZL1G BC640G BC640ZL1 BC640ZL1G
Contextual Info: BC638, BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC638 BC640 Collector-Base Voltage Vdc −60 −80

bc640

Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Contextual Info: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

24825

Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

bc640

Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

Contextual Info: BC635 THRU’ BC640 COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors for AF driver stages and amplifier applications up to 1A. ‘ TO-92 L Collector-Emitter Voltage

BC640-16

Abstract: BC636 BC64 BC640 BC640ZL1G BC638 BC640G 2bc640
Contextual Info: BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage

BC327 SOT 23

Abstract: PZT2222AT1 BC639 sot
Contextual Info: Bipolar Transistors High Current Transistors w 500 mA V(BR)CEO IC mA Max Min Max MPSL51 100 600 40 250 BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 − BC640 BC490A BC490B BC640−16

bc638 equivalent

Abstract: bc640 equivalent bc636
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage

BC640

Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0

bc640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5

bc640c

Contextual Info: BC636 BC638 BC640 M A X IM U M RATINGS Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage Rating v CEO -4 5 -6 0 -8 0 Vdc Collector-Base Voltage v CBO -4 5 -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -5 .0 Collector Current — Continuous >C -0 .5 Ade Total Device Dissipation

c640 pnp

Abstract: c 64016 C 63816 c638 Philips 64016
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A

BC640

Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Contextual Info: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636

bc640

Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

BC640

Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

bc638

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.

bc640-016g

Abstract: 016G
Contextual Info: BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage

BC640

Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
Contextual Info: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.